Over 15% Efficient Hydrogenated Amorphous Silicon Based Triple-Junction Solar Cells Incorporating Nanocrystalline Silicon

2006 ◽  
Author(s):  
Baojie Yan ◽  
Guozhen Yue ◽  
Jessica Owens ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Triple Junction ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Silicon Based ◽  
Hydrogenated Amorphous

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Based Solar Cells: Optimization Formalism and Numerical Algorithm

2009 ◽  
Vol 1153 ◽  
Author(s):  
Anatoli Shkrebtii ◽  
Yuriy Kryuchenko ◽  
Anaroliy Sachenko ◽  
Igor Sokolovskyi ◽  
Franco Gaspari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Film ◽  
Solar Cell Performance ◽  
Transparent Conducting ◽  
Silicon Based ◽  
Hydrogenated Amorphous

AbstractThin film hydrogenated amorphous silicon (a-Si:H) is widely used in photovoltaics. In order to get the best possible performance of the a-Si:H solar cells it is important to optimize the amorphous film and solar cells in terms their parameters such as mobility gap, p-, i- and n-layer doping levels, electron and hole lifetime and their mobilities, resistance of p-, i- and n-layers, contact grid geometry and parameters of the transparent conducting and antireflecting layers, and others. To maximize thin a-Si:H film based solar cell performance we have developed a general numerical formalism of photoconversion, which takes into account all the above parameters for the optimization. Application of the formalism is demonstrated for typical a-Si:H based solar cells before Staebler-Wronski (SW) light soaking effect. This general formalism is not limited to a-Si:H based systems only, and it can be applied to other types of solar cells as well.

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