Interconnect Capacitance Extraction in Large-Area a-Si Imaging Systems

1998 ◽  
Vol 507 ◽  
Author(s):  
H.H. Pham ◽  
A. Nathan
Keyword(s):  
Thin Film Transistors ◽  
Extraction Method ◽  
Three Dimensional ◽  
Imaging Systems ◽  
Computational Technique ◽  
Floating Potential ◽  
Large Area ◽  
Capacitance Extraction ◽  
Exponential Expansion ◽  
Si Thin Film

ABSTRACTWe present a new numerical extraction method for the quasi-static parasitic coupling capacitances associated with geometric overlapping in amorphous silicon (a-Si) thin film transistors (TFTs) and interconnect addressing lines in large-area a-Si imaging systems. The capacitance is extracted using a recently developed computational technique, based on exponential expansion of the Green's function, which offers a quick and accurate means of computing the three-dimensional potential and electric field, and hence, the charge distribution and capacitance. The technique can be used for effectively dealing with the extreme geometry TFT and interconnect structures (where layer thicknesses are much smaller than the other physical dimensions), the floating potential of the glass substrate, and multidielectric media, all of which are typical to large-area a-Si imaging electronics.

Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L772-L774
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Yasunori Ohno ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ion Source ◽  
Rf Plasma ◽  
Large Area ◽  
Plasma Cathode ◽  
Si Thin Film

scholarly journals TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1540
Author(s):  
Xiaoyu Liu ◽  
Yong Zhang ◽  
Haoran Wang ◽  
Luwei Qi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Extraction Method ◽  
Schottky Diodes ◽  
Three Dimensional ◽  
Parameter Extraction ◽  
Frequency Multiplier ◽  
Junction Capacitance ◽  
Capacitance Extraction ◽  
Electromagnetic Model ◽  
Measurement Results ◽  
Parasitic Parameters

In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequencies. The method is divided into the de-embedding and parameter extraction, including six auxiliary configurations and, is referred tos as Two-step Six-configuration Parameter Extraction Method (TSPEM). Compared to the traditional junction capacitance extraction method, this method can extract the value of junction capacitance at higher frequencies with higher accuracy. At the same time, compared to the other de-embedding methods, this method shows better performance in de-embedding the contributions of parasitic structures from the transmission line measurements. The intrinsic junction capacitances obtained by this method and the three-dimensional (3-D) electromagnetic model are combined to form a diode simulation model, which accurately characterizes the capacitance characteristics of the SBD. It was verified with a 200 GHz double frequency multiplier, and the simulation results and measurement results showed good consistency.

Gate-overlapped lightly doped drain poly-Si thin-film transistors for large area-AMLCD

1998 ◽  
Vol 45 (6) ◽  
pp. 1272-1279 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jong-Wook Lee ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Large Area ◽  
Lightly Doped Drain ◽  
Si Thin Film

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Excimer-Laser Growth of Si Large-Grain Arrays

2004 ◽  
Vol 808 ◽  
Author(s):  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Liquid Crystal Displays ◽  
Medium Size ◽  
Large Area ◽  
Development Center ◽  
Si Thin Film

ABSTRACTAmorphous silicon (a-Si) Thin Film Transistors (TFT) will continue to play an important role in large-area liquid crystal displays (LCD), however, there is also a strong demand for ultra-high performance TFTs aimed at intelligent small (or medium) size displays. For this reason, “Crystal Si on glass” has become an increasingly attractive solution. This paper reviews recent work performed at ALTEDEC (Advanced LCD Technologies Development Center Co., Ltd, with regard to growing an array of large Si grains at low temperature. The results obtained so far indicate that satisfactory progress has been made towards the achievement of this goal.

Capacitance extraction method for a free-standing bilayer lipid membrane formed over an aperture in a nanofabricated silicon chip

2020 ◽  
Vol 59 (SI) ◽  
pp. SIIK02
Author(s):  
Yasutaka Tomioka ◽  
Shogo Takashima ◽  
Masataka Moriya ◽  
Hiroshi Shimada ◽  
Fumihiko Hirose ◽  
...  
Keyword(s):  
Extraction Method ◽  
Lipid Membrane ◽  
Bilayer Lipid Membrane ◽  
Free Standing ◽  
Capacitance Extraction ◽  
Bilayer Lipid

scholarly journals Mastering of NIL Stamps with Undercut T-Shaped Features from Single Layer to Multilayer Stamps

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 956
Author(s):  
Philipp Taus ◽  
Adrian Prinz ◽  
Heinz D. Wanzenboeck ◽  
Patrick Schuller ◽  
Anton Tsenov ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Nanoimprint Lithography ◽  
Silicon Oxide ◽  
Three Dimensional ◽  
Single Layer ◽  
Fabrication Technology ◽  
Large Area ◽  
Structural Colors ◽  
Biomimetic Structures ◽  
Morpho Butterfly

Biomimetic structures such as structural colors demand a fabrication technology of complex three-dimensional nanostructures on large areas. Nanoimprint lithography (NIL) is capable of large area replication of three-dimensional structures, but the master stamp fabrication is often a bottleneck. We have demonstrated different approaches allowing for the generation of sophisticated undercut T-shaped masters for NIL replication. With a layer-stack of phase transition material (PTM) on poly-Si, we have demonstrated the successful fabrication of a single layer undercut T-shaped structure. With a multilayer-stack of silicon oxide on silicon, we have shown the successful fabrication of a multilayer undercut T-shaped structures. For patterning optical lithography, electron beam lithography and nanoimprint lithography have been compared and have yielded structures from 10 µm down to 300 nm. The multilayer undercut T-shaped structures closely resemble the geometry of the surface of a Morpho butterfly, and may be used in future to replicate structural colors on artificial surfaces.

scholarly journals Radial Turbine Design for Solar Chimney Power Plants

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 674
Author(s):  
Paul Caicedo ◽  
David Wood ◽  
Craig Johansen
Keyword(s):  
Power Plants ◽  
Reference Frames ◽  
Three Dimensional ◽  
Discrete Ordinates ◽  
Large Area ◽  
Solar Chimney ◽  
Cfd Simulations ◽  
Radial Turbine ◽  
Design Changes ◽  
Turbine Design

Solar chimney power plants (SCPPs) collect air heated over a large area on the ground and exhaust it through a turbine or turbines located near the base of a tall chimney to produce renewable electricity. SCPP design in practice is likely to be specific to the site and of variable size, both of which require a purpose-built turbine. If SCPP turbines cannot be mass produced, unlike wind turbines, for example, they should be as cheap as possible to manufacture as their design changes. It is argued that a radial inflow turbine with blades made from metal sheets, or similar material, is likely to achieve this objective. This turbine type has not previously been considered for SCPPs. This article presents the design of a radial turbine to be placed hypothetically at the bottom of the Manzanares SCPP, the only large prototype to be built. Three-dimensional computational fluid dynamics (CFD) simulations were used to assess the turbine’s performance when installed in the SCPP. Multiple reference frames with the renormalization group k-ε turbulence model, and a discrete ordinates non-gray radiation model were used in the CFD simulations. Three radial turbines were designed and simulated. The largest power output was 77.7 kW at a shaft speed of 15 rpm for a solar radiation of 850 W/m2 which exceeds by more than 40 kW the original axial turbine used in Manzanares. Further, the efficiency of this turbine matches the highest efficiency of competing turbine designs in the literature.

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