Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication

1998 ◽  
Vol 507 ◽  
Author(s):  
J.T. Walton ◽  
M. Amman ◽  
G. Conti ◽  
W.S. Hong ◽  
P.N. Luke ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Radiation Detector ◽  
Silicon Detector ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Crystal Silicon ◽  
Silicon Heterojunctions

ABSTRACTApplication of amorphous silicon/crystalline silicon heterojunctions formed by RF sputter deposition and plasma enhanced chemical vapor deposition to the fabrication of nuclear radiation detectors is described. The performance of these heterojunctions as blocking contacts on highresisitivity p-type and n-type single crystal silicon and on lithium-ion compensated silicon (Si(Li)), which are commonly used in silicon detector fabrication, is presented. It is shown that an aluminum/amorphous-silicon contact on Si(Li) x-ray detectors results in about a factor of two reduction in the background counts when compared to a normal gold barrier contact.

A Preliminary Observation on AgGaSe2 as a Nuclear Radiation Detector

1982 ◽  
Vol 16 ◽  
Author(s):  
Eiji Sakai ◽  
Hiromichi Horinaka ◽  
Hajimu Sonomura ◽  
Takeshi Miyauchi
Keyword(s):  
Radiation Detector ◽  
Silicon Detector ◽  
Alpha Particles ◽  
Nuclear Radiation ◽  
Surface Barrier ◽  
Applied Bias Voltage ◽  
Nuclear Radiation Detector ◽  
Barrier Detector ◽  
Temperature Noise ◽  
Silicon Surface Barrier Detector

ABSTRACTAn about 108 ohm-cm AgGaSe2 crystal of 0.5 mm × 4 mm × 4 mm was polished and contacts were made by evaporating 130 μg/cm2 gold of 3 mm diameter on the two faces of the crystal. The detector was tested using 5.5 MeV alpha-particles at room temperature. Noise increased above an applied bias voltage of 80 V. For + 50 V applied on the electrode opposite to the particle incident electrode, i.e., for electron traversal mode, the preamplifier output pulses showed a risetime of 20 μs and an amplitude of about one-tenth of that obtained from a silicon surface-barrier detector whereas the silicon detector showed a risetime of 0.07 μs. For - 50 V applied on the same electrode, i.e., for hole traversal mode, no pulses were observed.

Laser Doping and Recrystallization for Amorphous Silicon Films by Plasma-Enhanced Chemical Vapor Deposition

2005 ◽  
Vol 475-479 ◽  
pp. 3791-3794
Author(s):  
Dong Sing Wuu ◽  
Shui Yang Lien ◽  
Jui Hao Wang ◽  
Hsin-Yuan Mao ◽  
In-Cha Hsieh ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Sol Gel ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Laser Doping

One of the most challenging problems to develop polycrystalline silicon thin-film solar cells is the growth of crystalline silicon on foreign, low-cost and low-temperature substrates. In this paper, a laser doping technique was developed for the plasma-deposited amorphous silicon film. A process combination of recrystallization and dopant diffusion (phosphorous or boron) was achieved simultaneously by the laser annealing process. The doping precursor was synthesized by a sol-gel method and was spin-coated on the sample. After laser irradiation, the grain size of the doped polycrystalline silicon was examined to be about 0.5~1.0 µm. The concentrations of 2×1019 and 5× 1018 cm-3 with Hall mobilities of 92.6 and 37.5 cm²/V-s were achieved for the laser-diffused phosphorous- and boron-type polysilicon films, respectively.

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