scholarly journals Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

1997 ◽  
Vol 44 (3) ◽  
pp. 961-964 ◽  
Author(s):  
J.T. Walton ◽  
W.S. Hong ◽  
P.N. Luke ◽  
N.W. Wang ◽  
F.P. Ziemba
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Radiation Detector ◽  
Nuclear Radiation ◽  
Nuclear Radiation Detector ◽  
Silicon Heterojunctions

Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication

1998 ◽  
Vol 507 ◽  
Author(s):  
J.T. Walton ◽  
M. Amman ◽  
G. Conti ◽  
W.S. Hong ◽  
P.N. Luke ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Radiation Detector ◽  
Silicon Detector ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Crystal Silicon ◽  
Silicon Heterojunctions

ABSTRACTApplication of amorphous silicon/crystalline silicon heterojunctions formed by RF sputter deposition and plasma enhanced chemical vapor deposition to the fabrication of nuclear radiation detectors is described. The performance of these heterojunctions as blocking contacts on highresisitivity p-type and n-type single crystal silicon and on lithium-ion compensated silicon (Si(Li)), which are commonly used in silicon detector fabrication, is presented. It is shown that an aluminum/amorphous-silicon contact on Si(Li) x-ray detectors results in about a factor of two reduction in the background counts when compared to a normal gold barrier contact.

A Preliminary Observation on AgGaSe2 as a Nuclear Radiation Detector

1982 ◽  
Vol 16 ◽  
Author(s):  
Eiji Sakai ◽  
Hiromichi Horinaka ◽  
Hajimu Sonomura ◽  
Takeshi Miyauchi
Keyword(s):  
Radiation Detector ◽  
Silicon Detector ◽  
Alpha Particles ◽  
Nuclear Radiation ◽  
Surface Barrier ◽  
Applied Bias Voltage ◽  
Nuclear Radiation Detector ◽  
Barrier Detector ◽  
Temperature Noise ◽  
Silicon Surface Barrier Detector

ABSTRACTAn about 108 ohm-cm AgGaSe2 crystal of 0.5 mm × 4 mm × 4 mm was polished and contacts were made by evaporating 130 μg/cm2 gold of 3 mm diameter on the two faces of the crystal. The detector was tested using 5.5 MeV alpha-particles at room temperature. Noise increased above an applied bias voltage of 80 V. For + 50 V applied on the electrode opposite to the particle incident electrode, i.e., for electron traversal mode, the preamplifier output pulses showed a risetime of 20 μs and an amplitude of about one-tenth of that obtained from a silicon surface-barrier detector whereas the silicon detector showed a risetime of 0.07 μs. For - 50 V applied on the same electrode, i.e., for hole traversal mode, no pulses were observed.

An Effective Purification Process for the Nuclear Radiation Detector Tl6SeI4

2018 ◽  
Vol 18 (6) ◽  
pp. 3484-3493 ◽  
Author(s):  
Wenwen Lin ◽  
Oleg Y. Kontsevoi ◽  
Zhifu Liu ◽  
Sanjib Das ◽  
Yihui He ◽  
...  
Keyword(s):  
Radiation Detector ◽  
Nuclear Radiation ◽  
Purification Process ◽  
Nuclear Radiation Detector
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