Formation of Transparent SiO2 Thin Film at Room Temperature with Excimer Lamp Irradiation

1997 ◽  
Vol 495 ◽  
Author(s):  
T. Okamoto ◽  
H. Iizuka ◽  
S. Ito ◽  
M. Murahara
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Molecular Layer ◽  
Surface Current ◽  
Atomic Layer ◽  
Reaction Chamber ◽  
Surface Current Density ◽  
Excimer Lamp ◽  
Sio2 Thin Film ◽  
Mixed Gases

ABSTRACTA transparent SiO2 thin film was grown with Xe2* excimer lamp and NF3, O2 mixed gases at room temperature. Unlike the conventional methods such as atomic layer epitaxy (ALE) at low temperature, this method requires only a few minutes for deposition without changing material gases. A Si substrate was placed in a reaction chamber, which was filled with NF3 and O2 gases. The gases were exposed to the Xe2* excimer lamp light, and SiF4 and NO2 were produced by photochemical reaction. The SiF4 was adsorbed on the substrate; which reacted with NO2 in gas ambient and was oxidized to form SiO2. The molecular layer was produced per reaction, and by voluntarily repeated reaction, the transparent SiO2 thin film was grown. As a result, the SiO2 film thickness of about 2200 Å was achieved for 15 minutes at room temperature. By annealing the formed SiO2 film, the surface current density of the formed SiO2 decreased; the higher the annealing temperature became, the more the surface density decreased.

scholarly journals SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Deposition Technique ◽  
Sio2 Thin Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.

Physical Behavior of Fluorine Atoms in the Fabricated Transparent SiO2 Thin Film at Room Temperature

1998 ◽  
Vol 555 ◽  
Author(s):  
H lizuka ◽  
M Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Photochemical Reaction ◽  
Oxidation Reaction ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Reaction Chamber ◽  
Si Substrate ◽  
Physical Behavior ◽  
Sio2 Thin Film

AbstractThis paper describe the growth of a transparent SiO2 thin film performed by using Xe2• excimer lamp at room temperature. In this study, NF., and O2 mixture gases was employed as a reaction gas. A silicon substrate was placed in a reaction chamber, which was filled with NF3 and O2 mixture gases. The mixture gases were exposed to the Xe2• excimer lamplight, and SiF4 and NO2 gases were produced by photochemical reaction. Subsequently SiF4 adsorbed onto the Si substrate. SiO2 was formed by oxidation reaction between SiF4 and NO2. These processes occur spontaneously, and SiO2 film is grown. The refractive index of fabrication SiO2 thin film is 1.32. By annealing at 200°C, the refractive index of this filn was increased to 1.44. Further increase in the annealing temperature, resulted in a higher refractive index and lower density of fluorine atoms.

Effects of Tris(tert-pentoxy)silanol Purge Time on SiO2 Thin-Film Growth Rate in Rapid Atomic Layer Deposition

2013 ◽  
Vol 2 (10) ◽  
pp. P91-P93 ◽  
Author(s):  
J. R. Kim ◽  
H. Lim ◽  
S. Park ◽  
Y. J. Choi ◽  
S. Suh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Film Growth Rate ◽  
Sio2 Thin Film ◽  
Layer Deposition

Growth of Transparent SiO2 Thin Film on Silicon at Room Temperatüre by Using I72nm Xe2* Excimer Lamp

1996 ◽  
Vol 446 ◽  
Author(s):  
T. Suzuki ◽  
M. Murahara
Keyword(s):  
Reaction Time ◽  
Chemical Reaction ◽  
Room Temperature ◽  
Specific Resistance ◽  
Relative Dielectric Constant ◽  
Si Substrate ◽  
Chain Reaction ◽  
Experimental Conditions ◽  
Excimer Lamp ◽  
Sio2 Thin Film

AbstractSiO2 insulator was fabricated by using Xe2* excimer lamp at room temperature. In this method, a mixrine of NF3 and O2 gases was employed as a reaction gas. When the NF3 and O2 gases were exposed to the Xe2* excimer lamp light NF3 and O2 gases inside the chamber where Si substrate was placed, SiFn and NO2 were produced by photo‐chemical reaction. The SiFn accumulates on the Si substrate, and SiO2 is formed by oxidation reaction between SiFn and NO2. Subsequently SiFn adheres onto the formed SiO2 and again oxidizes by NO2. These processes occur spontaneously, and on SiO2 film is grown. Experimental conditions were NF3:O2 = 10:1, the total gas pressure 330 torr, photo‐chemical reaction time 5 minutes, and chain reaction time 5 minutes. The results of the film characterization were a SiO2 film thickness of about 1500Å, a refractive index of 1.38, specific resistance of 1.67*1010 Ω cm and relative dielectric constant of 6.96.

scholarly journals Photoactive Thin-Film Structures of Curcumin, TiO2 and ZnO

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3214
Author(s):  
Anish Philip ◽  
Ramin Ghiyasi ◽  
Maarit Karppinen
Keyword(s):  
Thin Film ◽  
Molecular Layer ◽  
Wavelength Region ◽  
Atomic Layer ◽  
Biologically Active ◽  
Molecular Layer Deposition ◽  
New Horizons ◽  
Layer Deposition ◽  
Layer Structures ◽  
Novel Applications

Curcumin is known as a biologically active compound and a possible antimicrobial agent. Here, we combine it with TiO2 and ZnO semiconductors, known for their photocatalytic properties, with an eye towards synergistic photo-harvesting and/or antimicrobial effects. We deposit different nanoscale multi-layer structures of curcumin, TiO2 and ZnO, by combining the solution-based spin-coating (S-C) technique and the gas-phase atomic layer deposition (ALD) and molecular layer deposition (MLD) thin-film techniques. As one of the highlights, we demonstrate for these multi-layer structures a red-shift in the absorbance maximum and an expansion of the absorbance edge as far as the longest visible wavelength region, which activates them for the visible light harvesting. The novel fabrication approaches introduced here should be compatible with, e.g., textile substrates, opening up new horizons for novel applications such as new types of protective masks with thin conformal antimicrobial coatings.

Anti–scatter coating on slab laser head for preventing evanescent wave by photo–oxidation of silicone oil

2005 ◽  
Vol 890 ◽  
Author(s):  
Takayuki Funatsu ◽  
Nobuhiro Sato ◽  
Yuji Sato ◽  
Takayuki Okamoto ◽  
Masataka Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Evanescent Wave ◽  
Room Temperature ◽  
Silicone Oil ◽  
Total Reflection ◽  
Excimer Lamp ◽  
Laser Head ◽  
Slab Laser ◽  
Low Refractive Index

ABSTRACTA low refractive index, hard SiO2 film was photochemically coated on the surface of slab laser head at room temperature by using silicone oil and a Xe2 excimer lamp. Nd+:glass slab laser produces high power laser because the light is amplified with a repeated total reflection in the laser medium. However, an evanescent wave arises on the total reflection interface, which causes a loss of the light energy. A low refractive index film 2 μm thick is, therefore, needed to prevent this problem. The vacuum vapor deposition method as a dry process and the spin-coating method as a wet process are generally used for making optical thin films. The former method can laminate a hard thin film, but requires temperatures above 500°C, and the thermal denaturation of the optical substrate is unavoidable. On the other hand, the latter method can form a low refractive index thin film, but the produced thin film has a poor adhesiveness and a low hardness. Besides, all these films are inferior in water resistance. We, therefore, formed a water-resistant, hard, and low refractive index protective coating directly on the laser glass surface at room temperature with photochemical reaction by the Xe2 excimer lamp.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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