Effects of Tris(tert-pentoxy)silanol Purge Time on SiO2 Thin-Film Growth Rate in Rapid Atomic Layer Deposition

2013 ◽  
Vol 2 (10) ◽  
pp. P91-P93 ◽  
Author(s):  
J. R. Kim ◽  
H. Lim ◽  
S. Park ◽  
Y. J. Choi ◽  
S. Suh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Film Growth Rate ◽  
Sio2 Thin Film ◽  
Layer Deposition

scholarly journals SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Deposition Technique ◽  
Sio2 Thin Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition

2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Scattering Study

Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition

2010 ◽  
Vol 16 (47) ◽  
pp. 13925-13929 ◽  
Author(s):  
Manjunath Puttaswamy ◽  
Kenneth Brian Haugshøj ◽  
Leif Højslet Christensen ◽  
Peter Kingshott
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Molecular Mechanisms ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Oxide Thin Film ◽  
Layer Deposition

Ellipsometry Study on Nanoparticles Grown by Atomic Layer Deposition

2013 ◽  
Vol 1548 ◽  
Author(s):  
Xueqi Zhou ◽  
Ying Zhang ◽  
Zhengqiong Dong ◽  
Shiyuan Liu ◽  
Chuanwei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Void Content ◽  
Supporting Evidence ◽  
Layer Deposition ◽  
Initial Nucleation ◽  
Cauchy Model

ABSTRACTSpectroscopic Ellipsometry (SE) was chosen to study thin film growth in atomic layer deposition (ALD). It was shown that Cauchy model had limitations in predicting the ultrathin film thickness at initial few deposition cycles, and the fitting results depend on wavelengths range greatly. Effective Medium Approximation (EMA) model is capable of predicting ultrathin film’s physical properties. Our experiments on Al2O3 growth give supporting evidence on the applicability of EMA model, where it is used to successfully explain the initial nucleation and island like growth. EMA model can be extended to be used for Palladium thin film, which can give reasonable thickness and void content.

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