Properties of A—Sin:H Films Prepared by Glow Discharge of Si2H6—Nh3 Gas Mixture

1985 ◽  
Vol 49 ◽  
Author(s):  
Y. Kojima ◽  
S. Narikawa ◽  
T. Matsuyama ◽  
E. Imada ◽  
H. Nojima ◽  
...  
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Deposition Rate ◽  
Molar Ratio ◽  
Gas Mixture ◽  
High Deposition Rate ◽  
Electrical And Optical Properties ◽  
Optical Gap ◽  
Wide Range ◽  
Photo Conductivity

AbstractThe electrical and optical properties of a—SiNx:H films prepared by the glow discharge of Si2H6-NH3 gas mixture have been investigated in a wide range of the molar ratio of NH3 to Si2H6 The maxima of the dark—and the photo—conductivity are observed at the molar ratio of about 10-1. At this molar ratio the deposition rate is about33 Å/sec. The optical gap and the compositional ratio of nitrogen to silicon change smoothly from those of a—Si:H to those of a—Si3N4. It is found that the valency control is possible in a—SiNx:H films prepared at a high deposition rate.

Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H)

1992 ◽  
Vol 242 ◽  
Author(s):  
M. Faraji ◽  
Sunil Gokhale ◽  
S. M. Chaudhari ◽  
M. G. Takwale ◽  
S. V. Ghaisas
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Surface ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Radio Frequency Glow Discharge ◽  
Absorption Studies ◽  
Discharge Method

ABSTRACTHydrogenated microcrystalline silicon with oxygen(mc-Si:O:H) is grown using radio frequency glow discharge method. Oxygen is introduced during growth by varying it's partial pressure in the growth chamber. The crystalline volume fraction ‘f’ and the crystallite size ‘δ’ are found to vary with the oxygen content. Results indicate that oxygen can etch the silicon surface when present in low amount while it forms a-SiO2-x with increasing contents. Optical absorption studies in the range of 2 to 3 eV suggest that the absorption coefficient ‘α’ lies in between the values of c-Si and a-Si:H.being closer to a-Si:H. The Hall mobility measurements for these samples indicate that for optimum oxygen contents the mobility as high as 35 cm2 V-1 sec-1 can be obtained. Results on I-V characteristics for p-i-n structure are presented.

Preparation and Research of Skeletal Pt-C Compounds

2018 ◽  
Vol 937 ◽  
pp. 83-87 ◽  
Author(s):  
Xin Ling Hu ◽  
Ying Jiang Qian ◽  
Dong Xu Li ◽  
Xiao Min Chen
Keyword(s):  
Optical Properties ◽  
Synthesis Method ◽  
Polymerization Reaction ◽  
Molar Ratio ◽  
Excellent Performance ◽  
Electrical And Optical Properties ◽  
Cermet Material ◽  
New Synthesis ◽  
New Ideas ◽  
New Type

Platinum matrix composite is a new type of functional pottery material, which has excellent mechanical, electrical and optical properties. Due to the complexity of the synthesis method and the expensive equipment, the development of cermet material is extremely slow, so that the method to solve the problem is urgently needed. In view of the excellent performance of the Pt-C compounds, by hydrothermal method and high temperature roasting method, a new synthesis method for the composite is proposed using melamine and four platinum chloride at 60 °C by the polymerization reaction with a molar ratio of 20:1. The synthetic of Pt-C compounds provides a new synthesis method and new ideas and at the same time the Pt-C compounds has excellent performance, showing the excellent applications in machining.

Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture

2008 ◽  
Vol 91 (2) ◽  
pp. 251-254 ◽  
Author(s):  
H.S. Kim ◽  
J.-M. Erie ◽  
S.J. Pearton ◽  
D.P. Norton ◽  
F. Ren
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Zno Thin Films ◽  
Gas Mixture ◽  
Electrical And Optical Properties

Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge

2003 ◽  
Vol 762 ◽  
Author(s):  
I. Milostnaya ◽  
T. Allen ◽  
F. Gaspari ◽  
N.P. Kherani ◽  
D. Yeghikyan ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Films ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Sem And Tem ◽  
Vis Spectroscopy ◽  
Dc Saddle Field

AbstractAmorphous (a-Si:H) and microcrystalline (μc-Si:H) hydrogenated silicon films were obtained using DC saddle field glow discharge. The structure of the films was determined by Raman spectroscopy, SEM and TEM. The optoelectronic characteristics of both a-Si:H and μcSi:H were investigated using FTIR, UV/VIS spectroscopy, dark electrical conductivity (σd) and photoconductivity (σph) measurements. Boron and phosphorous doping of a-Si:H and μc-Si:H films was also investigated. The results show that both a-Si:H and μc-Si:H undoped films are highly resistive (σd=10-8-10-10 Ω-1cm-1). The doping efficiency of μc-Si:H films is much higher than a-Si:H films. The Tauc gap for a-Si:H was in the range 1.8-1.9 eV and for μc-Si:H films it was in the range 1.9-2.5 eV. The photoconductivity measurements of undoped films indicate a higher photosensitivity of a-Si:H films (σph/σd=104)than that of μc-Si:H films (σph/σd=10-100).

Variation of Electrical and Optical Properties of Glow Discharge Si-N-H Films with Their Composition

1986 ◽  
Author(s):  
Nicole PROUST ◽  
Francois BOULITROP ◽  
Bernard HEPP ◽  
Nicolas SZYDLO ◽  
Eric CRITON ◽  
...  
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Electrical And Optical Properties
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