NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN

2006 ◽  
Vol 3 (6) ◽  
pp. 1527-1530 ◽  
Author(s):  
A. Yamamoto ◽  
H. Miwa ◽  
Y. Shibata ◽  
A. Hashimoto
Keyword(s):  
Optical Properties ◽  
Atmospheric Pressure ◽  
Molar Ratio ◽  
Electrical And Optical Properties ◽  
Ratio Dependence

Preparation and Research of Skeletal Pt-C Compounds

2018 ◽  
Vol 937 ◽  
pp. 83-87 ◽  
Author(s):  
Xin Ling Hu ◽  
Ying Jiang Qian ◽  
Dong Xu Li ◽  
Xiao Min Chen
Keyword(s):  
Optical Properties ◽  
Synthesis Method ◽  
Polymerization Reaction ◽  
Molar Ratio ◽  
Excellent Performance ◽  
Electrical And Optical Properties ◽  
Cermet Material ◽  
New Synthesis ◽  
New Ideas ◽  
New Type

Platinum matrix composite is a new type of functional pottery material, which has excellent mechanical, electrical and optical properties. Due to the complexity of the synthesis method and the expensive equipment, the development of cermet material is extremely slow, so that the method to solve the problem is urgently needed. In view of the excellent performance of the Pt-C compounds, by hydrothermal method and high temperature roasting method, a new synthesis method for the composite is proposed using melamine and four platinum chloride at 60 °C by the polymerization reaction with a molar ratio of 20:1. The synthetic of Pt-C compounds provides a new synthesis method and new ideas and at the same time the Pt-C compounds has excellent performance, showing the excellent applications in machining.

Influence of Growth Parameters on the Properties of InxGa1-xAs Grown on GaAs by OMVPE

1994 ◽  
Vol 340 ◽  
Author(s):  
E. Ernest Van Dyk ◽  
Andrew W. R. Leitch ◽  
Hendrik L. Ehlers
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Atmospheric Pressure ◽  
Growth Parameters ◽  
Gas Composition ◽  
Electrical And Optical Properties ◽  
Gaas Substrates

ABSTRACTInxGa1-xAs epilayers (x < 0.2) have been grown on GaAs substrates by atmospheric pressure OMVPE. The effects of varying the substrate temperature and the gas composition on the properties of the epilayers were investigated. The investigations have shown that higher mobilities were obtained at low growth temperatures (610°C), while optimum optical properties were obtained at higher growth temperatures (690°C). Variation of the AsH3 overpressure yielded optimum electrical and optical properties at a V/III ratio of 50. 77 K mobilities higher than 42 000 cm2/V.s and photoluminescence linewidths as low as 4.4 meV were obtained for x = 0.087 and x = 0.137 epilayers, respectively.

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