Piiotoelectronic Proiioerties Of Amorpiious Silicon/Silicon Oxide Heterostructures

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Carasco ◽  
J. Mort ◽  
F. Jansen ◽  
S. Grammatica
Keyword(s):  
Glow Discharge ◽  
Optical Absorption ◽  
Energy Barrier ◽  
Spectral Dependence ◽  
Silicon Oxide ◽  
Oxide Heterostructures ◽  
Internal Photoemission ◽  
Thermal Oxide ◽  
Silicon Silicon

A glow-discharge deposited a-Si:H/insulator heterostructu re has been characterized by a range of measurements including optical absorption, internal photoemission, xerographic discharge and spectral dependence of photoconductivity. Efficient injection of photocarriers from a-Si:H into, and transport through, films of SiOx:N:H up to 10 μm thick has been achieved. Unlike the conventional thermal oxide on Si, no significant energy barrier to injection is fotInd in the plasma deposited heterostructure. The use of the structure as a potential xerographic device is demonstrated. A mobility lifetime product as high as 6 x 10-10 cm2/volt is found for electronsin the SiOx:N:H.

Transport Properties of Amorphous Silicon / Silicon Oxide Heterostructures

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Steemers ◽  
J. Mort ◽  
I. Chen ◽  
F. Jansen ◽  
S. Grammatica ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Transport Model ◽  
Electron Lifetime ◽  
Defect States ◽  
Time Resolved ◽  
Oxide Heterostructures ◽  
Silicon Silicon

ABSTRACTThe transport of excess carriers in glow-discharge deposited a-Si:H/insulator heterostructures has been studied by time-of-flight and xerographic discharge techniques. Efficient injection of photocarriers from a-Si:H into, and transport through, relatively thick SiOx:N:H has been achieved. A mobility-lifetime product approaching 18−6 cm2V−1 is found for electrons in SiOx:N:H, and time resolved measurements indicate a room temperature mobility of 5×10−6 cm2v−1s−1 at a field of 2×104 Vcm−1, suggesting an electron lifetime of the order of 8.2 seconds. The results are contrasted with transport measurements on thermally grown SiO2 on Si and a transport model involving hopping through defect states within the gap of SiOx:N:H is discussed.

Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousSi1−xGexalloys

1982 ◽  
Vol 25 (12) ◽  
pp. 7678-7687 ◽  
Author(s):  
B. von Roedern ◽  
D. K. Paul ◽  
J. Blake ◽  
R. W. Collins ◽  
G. Moddel ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Optical Absorption

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

The silicon–silicon oxide multilayers utilization as intrinsic layer on pin solar cells

2008 ◽  
Vol 516 (20) ◽  
pp. 6930-6933 ◽  
Author(s):  
H. Colder ◽  
P. Marie ◽  
F. Gourbilleau
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Silicon Silicon

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon

scholarly journals Магнитооптические свойства дисперсий наночастиц на основе Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-, полученных методом импульсной лазерной абляции в жидкости

2021 ◽  
Vol 63 (12) ◽  
pp. 2061
Author(s):  
О.В. Солодова ◽  
А.Э. Соколов ◽  
О.С. Иванова ◽  
М.Н. Волочаев ◽  
И.Н. Лапин ◽  
...  
Keyword(s):  
Spectral Dependence ◽  
Distribution Curve ◽  
Silicon Oxide ◽  
Magnetic Phase ◽  
Magnetic Circular Dichroism ◽  
Size Distributions ◽  
Iron Ions ◽  
Colloidal Solutions ◽  
Functional Additives ◽  
Magnetite Fe3o4

The structure, optical and magneto-optical properties of colloidal solutions of iron oxide nanoparticles obtained by pulsed ablation in distilled water, both without additives and with various functional additives: gold-hydrochloric acid, silicon oxide, and polyvinylpyrrolidone, have been studied. It is shown that the main magnetic phase is magnetite Fe3O4. The size distribution of nanoparticles and the degree of their agglomeration depend on the additives. In the absence of the latter, a very wide of size distributions and strong agglomeration of particles are observed. The narrowest distribution curve with a maximum corresponding to ~ 7 nm and an almost complete absence of agglomeration are observed for particles synthesized in the presence of polyvinylpyrrolidone. The shape of the spectral dependence of magnetic circular dichroism, which generally corresponds to the spectrum of magnetite, undergoes some modifications for various additives, which is associated with defects in the distribution of iron ions between different positions in the crystal.

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