Transport Properties of Amorphous Silicon / Silicon Oxide Heterostructures

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Steemers ◽  
J. Mort ◽  
I. Chen ◽  
F. Jansen ◽  
S. Grammatica ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Transport Model ◽  
Electron Lifetime ◽  
Defect States ◽  
Time Resolved ◽  
Oxide Heterostructures ◽  
Silicon Silicon

ABSTRACTThe transport of excess carriers in glow-discharge deposited a-Si:H/insulator heterostructures has been studied by time-of-flight and xerographic discharge techniques. Efficient injection of photocarriers from a-Si:H into, and transport through, relatively thick SiOx:N:H has been achieved. A mobility-lifetime product approaching 18−6 cm2V−1 is found for electrons in SiOx:N:H, and time resolved measurements indicate a room temperature mobility of 5×10−6 cm2v−1s−1 at a field of 2×104 Vcm−1, suggesting an electron lifetime of the order of 8.2 seconds. The results are contrasted with transport measurements on thermally grown SiO2 on Si and a transport model involving hopping through defect states within the gap of SiOx:N:H is discussed.

Piiotoelectronic Proiioerties Of Amorpiious Silicon/Silicon Oxide Heterostructures

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Carasco ◽  
J. Mort ◽  
F. Jansen ◽  
S. Grammatica
Keyword(s):  
Glow Discharge ◽  
Optical Absorption ◽  
Energy Barrier ◽  
Spectral Dependence ◽  
Silicon Oxide ◽  
Oxide Heterostructures ◽  
Internal Photoemission ◽  
Thermal Oxide ◽  
Silicon Silicon

A glow-discharge deposited a-Si:H/insulator heterostructu re has been characterized by a range of measurements including optical absorption, internal photoemission, xerographic discharge and spectral dependence of photoconductivity. Efficient injection of photocarriers from a-Si:H into, and transport through, films of SiOx:N:H up to 10 μm thick has been achieved. Unlike the conventional thermal oxide on Si, no significant energy barrier to injection is fotInd in the plasma deposited heterostructure. The use of the structure as a potential xerographic device is demonstrated. A mobility lifetime product as high as 6 x 10-10 cm2/volt is found for electronsin the SiOx:N:H.

ITO/a-SiNx:H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Tao ◽  
Q. Ma ◽  
D. Striakhilev ◽  
A. Nathan
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Room Temperature ◽  
Dynamic Range ◽  
Transport Model ◽  
Measurement Data ◽  
Mis Structure ◽  
Defect States ◽  
Large Area ◽  
Density Of Defect States

ABSTRACTWe report an ITO/a-SiNx:H/a-Si:H MIS photodiode structure based on room temperature deposition of optically transparent polycrystalline ITO for applications in large area optical and x-ray imaging. The photodiode structure exhibits device characteristics with reduced leakage current and enhanced photosensitivity giving rise to a hundred-fold improvement in dynamic range. This notable improvement in performance is believed to be due to the reduced diffusion of oxygen from the ITO to the a-Si:H layer, and thus reducing the density of defect states inside the a-Si:H layer. The behavior of photo and dark current is consistent with an elaborate transport model for the Schottky barrier. The model agrees reasonably well with measurement data for the dark current and provides a consistent picture in terms of the photo current behavior in the MIS structure, where the insulating layer serves to reduce the oxygen diffusion.

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

1991 ◽  
Vol 219 ◽  
Author(s):  
Gaorong Han ◽  
Jianmin Qiao ◽  
Piyi Du ◽  
Zhonghua Jiang ◽  
Zishang Ding
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Molecular Hydrogen ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Sulphur Content ◽  
Defect States ◽  
Hydrogenated Amorphous

ABSTRACTWe have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.

Nanostructured Silicon Oxide Dual-Function Layer in Amorphous Silicon Based Solar Cells

2012 ◽  
Vol 1426 ◽  
pp. 69-74 ◽  
Author(s):  
Tining Su ◽  
Baojie Yan ◽  
Laura Sivec ◽  
Guozhen Yue ◽  
Jessica Owens-Mawson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Silicon Oxide ◽  
Cell Structure ◽  
Nanocrystalline Silicon ◽  
Index Of Refraction ◽  
Dual Function ◽  
P Cells

ABSTRACTWe report the results of using n-type hydrogenated nanocrystalline silicon oxide alloy (nc-SiOx:H) in hydrogenated nanocrystalline silicon (nc-Si:H) and amorphous silicon germanium alloy (a-SiGe:H) single-junction solar cells. We used VHF glow discharge to deposit nc-SiOx:H layers on various substrates for material characterizations. We also used VHF glow discharge to deposit the intrinsic layer in nc-Si:H solar cells. RF glow discharge was used for the deposition of the doped layers and the intrinsic layer in a-SiGe:H solar cells. Various substrates such as stainless steel (SS), Ag coated SS, and ZnO/Ag coated SS were used for different cell structures. We found that by using nc-SiOx:H to replace the ZnO and the a-Si:H n-layer in nc-Si:H solar cells, the cell structure is greatly simplified, while the cell performances remain nearly identical to those made using the conventional n-i-p structure on standard ZnO/Ag BR’s. Solar cells with nc-SiOx:H as the n layer directly deposited on textured Ag show similar quantum efficiency (QE) as the n-i-p cells on ZnO/Ag BRs. In both cases, QE is higher than that in the n-i-p cells made directly on Ag coated SS. This effect is probably caused by the shift of surface plasmon-polariton resonance frequency due to the difference in index of refraction of ZnO, nc-SiOx:H, and Si.

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