Numerical simulation of the current-voltage characteristics of heteroepitaxial Schottky-barrier diodes

1993 ◽  
Vol 40 (6) ◽  
pp. 1038-1046 ◽  
Author(s):  
U.V. Bhapkar ◽  
R.J. Mattauch
Keyword(s):  
Numerical Simulation ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Current-voltage characteristics of low energy proton and alpha particle irradiated Au and Schottky barrier diodes

1997 ◽  
Vol 41 (5) ◽  
pp. 802-805 ◽  
Author(s):  
S Arulkumaran ◽  
J Arokiaraj ◽  
N Dharmarasu ◽  
J Kumar ◽  
P Magudapathy ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Alpha Particle ◽  
Low Energy ◽  
Schottky Barrier Diodes ◽  
Energy Proton ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature dependence of current–voltage characteristics of Ag/p-SnS Schottky barrier diodes

2005 ◽  
Vol 242 (3-4) ◽  
pp. 412-418 ◽  
Author(s):  
Mehmet Şahin ◽  
Haluk Şafak ◽  
Nihat Tuğluoğlu ◽  
Serdar Karadeniz
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics
Sign in / Sign up

Export Citation Format

Share Document