High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. J. Murry ◽  
Rui Q. Yang ◽  
S. S. Pei ◽  
H. Q. Le ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Optical Pumping ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Stimulated Emission ◽  
Free Carrier Absorption ◽  
Type Ii ◽  
Optically Pumped ◽  
Internal Loss

AbstractStimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50245-50249 ◽  
Author(s):  
Yingdong Tian ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Lower Threshold ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Quantum Well Laser ◽  
Cleaved Facets ◽  
Multiple Quantum Well Laser

We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.

Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Stimulated Emission ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Room‐temperature stimulated emission in optically pumped narrow ZnSe/ZnSxSe1−xmultiple‐quantum‐well structures

1992 ◽  
Vol 72 (10) ◽  
pp. 4969-4971 ◽  
Author(s):  
M. Dabbicco ◽  
R. Cingolani ◽  
M. Ferrara ◽  
I. Suemune ◽  
Y. Kuroda
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Quantum Well Structures

High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells

2020 ◽  
Vol 117 (16) ◽  
pp. 162106
Author(s):  
Hideaki Murotani ◽  
Ryohei Tanabe ◽  
Keisuke Hisanaga ◽  
Akira Hamada ◽  
Kanta Beppu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Uv C

High-power optically pumped type-II quantum well lasers

1998 ◽  
Author(s):  
Donald L. McDaniel, Jr. ◽  
Charles E. Moeller ◽  
Michael Falcon ◽  
Stefan J. Murry ◽  
C.H. T. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Type Ii ◽  
Optically Pumped

Recent Progress of Mid-IR Type-II Interband Cascade Lasers

1999 ◽  
Vol 607 ◽  
Author(s):  
Chlh-Hsiang Lin ◽  
W.-Y. Hwang ◽  
S. V. Zaitsev ◽  
J. Urn ◽  
C.H. Kuo ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Recent Progress ◽  
Internal Quantum Efficiency ◽  
Dual Wavelength ◽  
Type Ii ◽  
Threshold Density ◽  
Internal Loss ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

AbstractWe report the recent progress in type-II interband cascade (IC) lasers, For the 4.2-pm devices, lasing was observed up to 210 K, and the threshold density was only 95 A/cm2at 90 K and 284 A/cm2at 200 K. For the 4.5-μm lasers, the internal loss was only 11.6 cm−1 and the internal quantum efficiency was 460% at 90 K. We have also demonstrated the first dual-wavelength type-II IC lasers at 4.482 and 4.568 μm.

High-Temperature W Diode Lasers Emitting at 3.3µm

1999 ◽  
Vol 607 ◽  
Author(s):  
L. J. Olafsen ◽  
W. W. Bewley ◽  
I. Vurgaftman ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Pumping ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Type Ii ◽  
Operating Characteristics ◽  
Current Densities ◽  
Cladding Layers

AbstractW lasers based on type-II antimonides were recently operated nearly to room temperature under the conditions of cw optical pumping. However, the development of electrically pumped mid-infrared lasers has not yet reached the same level of performance. This is largely related to the more challenging task of simultaneously optimizing the doping/transport and gain/optical properties of the devices. Here we report a demonstration of type-II mid-IR diode lasers employing W active quantum wells. Laser structures with 5 or 10 active periods sandwiched between broadened-waveguide separate confinement regions and quaternary optical cladding layers were processed into 100-µm-wide stripes, cleaved into 1-mm-long cavities, and mounted junction side down. For 0.5-1 µs pulses at a repetition rate of 200 Hz, lasing was obtained up to a maximum operating temperature of 310 K, where the emission wavelength was 3.27 µm. The threshold current densities were 110 A/cm2and 25 kA/cm2 at 78 and 310 K, respectively. The characteristic temperature, To, was 48 K for temperatures between 100 and 280 K. Operation in cw mode was obtained to 195 K, with threshold current densities of 63 A/cm2and 1.4 kA/cm2at 78 and 195 K, respectively, with To = 38 K between 78 and 195 K. Significant further improvements in the operating characteristics are expected once the optimization of the designs and fabrication procedures is complete.

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