Room‐temperature stimulated emission in optically pumped narrow ZnSe/ZnSxSe1−xmultiple‐quantum‐well structures

1992 ◽  
Vol 72 (10) ◽  
pp. 4969-4971 ◽  
Author(s):  
M. Dabbicco ◽  
R. Cingolani ◽  
M. Ferrara ◽  
I. Suemune ◽  
Y. Kuroda
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Quantum Well Structures

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Indium Content ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
High Indium Content

High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. J. Murry ◽  
Rui Q. Yang ◽  
S. S. Pei ◽  
H. Q. Le ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Optical Pumping ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Stimulated Emission ◽  
Free Carrier Absorption ◽  
Type Ii ◽  
Optically Pumped ◽  
Internal Loss

AbstractStimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Spectroscopic evidence for different laser gain mechanisms in optically pumped ZnCdS/ZnS quantum well structures

1998 ◽  
Vol 84 (10) ◽  
pp. 5621-5625 ◽  
Author(s):  
P. Chen ◽  
J. E. Nicholls ◽  
M. O’Neill ◽  
T. Stirner ◽  
J. H. C. Hogg ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optically Pumped ◽  
Quantum Well Structures ◽  
Spectroscopic Evidence ◽  
Laser Gain

scholarly journals Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi‐Quantum Well Structures

2019 ◽  
Vol 6 (22) ◽  
pp. 1902995 ◽  
Author(s):  
Qingyi Xiang ◽  
Hiroaki Sukegawa ◽  
Mohamed Belmoubarik ◽  
Muftah Al‐Mahdawi ◽  
Thomas Scheike ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Quantum Well Structures ◽  
Tunnel Magnetoresistance ◽  
Resonant Tunnel
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