Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Stimulated Emission ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Indium Content ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
High Indium Content

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks

1997 ◽  
Vol 482 ◽  
Author(s):  
R. A. Mair ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
B. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Fold Increase ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Transition Intensity ◽  
Exciton Transition ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

AbstractAn array of microdisks with diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 Å/50 Å GaN/AlxGa1-xN (x∼ 0.07) multiple quantum well (MQW) structure grown by reactive molecular beam epitaxy. The as-grown MQWs and the microdisk structures have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. PL emission spectra and decay dynamics were measured at various temperatures and pump intensities. With respect to the original MQWs, we observe strong enhancement of the transition intensity and lifetime for both the intrinsic and barrier transitions. The intrinsic transition is excitonic at low temperatures and exhibits an approximate 10 fold increase in both lifetime and PL intensity upon formation of the microdisks. The exciton transition magnitude diminishes rapidly with increased temperature however, while the enhanced lifetime shows little change. At room temperature the dominant GaN well transition is found to be band-to-band in nature as evidenced by effective band gap shrinkage and band-filling effects seen within the PL spectrum. The implications of our results to III-Nitride microdisk lasers are discussed.

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stimulated Emission ◽  
Pump Light ◽  
Band Edge Emission ◽  
Emission Characteristics ◽  
Nitrogen Laser ◽  
Edge Emission ◽  
Edge Luminescence ◽  
Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Optical pumping of IV-VI semiconductor multiple quantum well materials using a GaSb-based laser with emission at λ=2.5μm

2005 ◽  
Vol 97 (5) ◽  
pp. 053103 ◽  
Author(s):  
P. J. McCann ◽  
P. Kamat ◽  
Y. Li ◽  
A. Sow ◽  
H. Z. Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Multiple Quantum

scholarly journals Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells

2000 ◽  
Vol 639 ◽  
Author(s):  
E.M. Goldys ◽  
M. Godlewski ◽  
M.R. Phillips ◽  
A.A. Toropov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Free Exciton ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Recombination Mechanism ◽  
Decay Times ◽  
Piezoelectric Fields

ABSTRACTWe have examined multiple quantum well AlGaN/GaN structures with several quantum wells of varying widths. The structures had strain-free quantum wells and strained barriers. Strong piezoelectric fields in these structures led to a large red shift of the PL emission energies and long decay times were also observed. While the peak energies could be modelled using the effective mass approximation, the calculated free exciton radiative lifetimes were much shorter than those observed in experiments, indicating an alternative recombination mechanism, tentatively attributed to localised excitons. Cathodoluminescence depth profiling revealed an unusually small penetration range of electrons suggesting that electron-hole pairs preferentially remain within the multiple quantum well region due to the existing electric fields. Spatial fluctuations of the cathodoluminescence intensity were also observed.

Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

1998 ◽  
Vol 73 (25) ◽  
pp. 3689-3691 ◽  
Author(s):  
T. J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A. J. Fischer ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Emission Characteristics ◽  
Multiple Quantum
Sign in / Sign up

Export Citation Format

Share Document