Recent Progress of Mid-IR Type-II Interband Cascade Lasers

1999 ◽  
Vol 607 ◽  
Author(s):  
Chlh-Hsiang Lin ◽  
W.-Y. Hwang ◽  
S. V. Zaitsev ◽  
J. Urn ◽  
C.H. Kuo ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Recent Progress ◽  
Internal Quantum Efficiency ◽  
Dual Wavelength ◽  
Type Ii ◽  
Threshold Density ◽  
Internal Loss ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

AbstractWe report the recent progress in type-II interband cascade (IC) lasers, For the 4.2-pm devices, lasing was observed up to 210 K, and the threshold density was only 95 A/cm2at 90 K and 284 A/cm2at 200 K. For the 4.5-μm lasers, the internal loss was only 11.6 cm−1 and the internal quantum efficiency was 460% at 90 K. We have also demonstrated the first dual-wavelength type-II IC lasers at 4.482 and 4.568 μm.

Recent progress by mid-IR antimonide type-II "W" interband cascade lasers and LWIR detectors

2006 ◽  
Author(s):  
C. L. Canedy ◽  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. S. Kim ◽  
M. Kim ◽  
...  
Keyword(s):  
Recent Progress ◽  
Type Ii ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

Recent progress in the development of type II interband cascade lasers

2004 ◽  
Vol 20 (3-4) ◽  
pp. 479-485 ◽  
Author(s):  
J.L. Bradshaw ◽  
N.P. Breznay ◽  
J.D. Bruno ◽  
J.M. Gomes ◽  
J.T. Pham ◽  
...  
Keyword(s):  
Recent Progress ◽  
Type Ii ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. J. Murry ◽  
Rui Q. Yang ◽  
S. S. Pei ◽  
H. Q. Le ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Optical Pumping ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Stimulated Emission ◽  
Free Carrier Absorption ◽  
Type Ii ◽  
Optically Pumped ◽  
Internal Loss

AbstractStimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

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