Uniaxial Stress Effects On Valence Band Structures Of GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
A. A. Yamaguchi ◽  
Y. Mochizuki ◽  
C. Sasaoka ◽  
A. Kimura ◽  
M. Nido ◽  
...  
Keyword(s):  
Valence Band ◽  
Uniaxial Stress ◽  
Reflectance Spectroscopy ◽  
Experimental Results ◽  
Energy Separation ◽  
Strain Effect ◽  
Deformation Potential ◽  
Stress Effects ◽  
Polarization Characteristics ◽  
Valence Bands

AbstractValence band modification by uniaxial stress in GaN is investigated by reflectance spectroscopy. It is observed that the energy separation between the A and B valence bands increases with the applied uniaxial stress in the c-plane. Changes of the wavefunctions by the stress are also investigated by the polarization characteristics of the reflectance spectra. The experimental results are analyzed on the basis of k•p theory, and deformation potential D5 is experimentally determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance.

ESR STUDY OF THE EFFECT OF UNIAXIAL STRESS ON THE BAND STRUCTURE OF CdS:I

1967 ◽  
Vol 45 (1) ◽  
pp. 127-135 ◽  
Author(s):  
B. J. Slagsvold ◽  
C. F. Schwerdtfeger
Keyword(s):  
Longitudinal Strain ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Uniaxial Stress ◽  
Uniaxial Pressure ◽  
Transverse Strain ◽  
Deformation Potential ◽  
Average Change ◽  
Valence Bands ◽  
G Value

The shift with uniaxial pressure in the g value of the ESR signal obtained from conductive iodine-doped CdS has been measured at ≈ 1.7 °K. For pressures parallel to the c axis, an average change in the g tensor of ≈ 9.4 × 10−7 cm2/kg was found, while for perpendicular pressures [Formula: see text] shifted an average of ≈ 4.4 × 10−7 cm2/kg. These shifts have been ascribed to a change in the energy gap separating the conduction-band minimum from the valence bands. They, as well as the change in the optical band gap with hydrostatic pressure as measured by Langer (1960), could be fairly well described by the approximate values 6.3 eV/unit longitudinal strain and 1.8 eV/unit transverse strain of the deformation potential constants for the gap.

scholarly journals The Quantum Calculation for Valence Band Structure of Strained Zinc-blende GaN Using Six-Band Based k·p Method

2021 ◽  
Vol 2065 (1) ◽  
pp. 012002
Author(s):  
Yaqun Liu ◽  
Everett X. Wang ◽  
Gary Zhang ◽  
Xiyue Li
Keyword(s):  
Valence Band ◽  
Quantum Confinement Effect ◽  
Hole Mobility ◽  
Uniaxial Stress ◽  
Carrier Distribution ◽  
Group Iii ◽  
Stress Effects ◽  
Zinc Blende ◽  
Group Iii Nitride ◽  
Strain Dependent

Abstract The variations of valence band energy with stress effects in zinc-blende GaN are proposed in this paper. The calculations are based on a six-band strain dependent k·p Hamiltonian, and can be self-consistently solved by Schrödinger-Poisson equation. Accurate physical pictures are given for the quantized valence subband structure under biaxial and uniaxial stress in (001) surface along the [110] direction accounting the quantum confinement effect. The warping of the energy profile results in carrier distribution change. This research will be beneficial for improving the hole mobility and the selective of optimum stress for group-III nitride semiconductor based devices.

Conduction bands of GaxIn1−xAs and InAsxSb1−xalloys

1970 ◽  
Vol 48 (4) ◽  
pp. 463-469 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
Band Structure ◽  
Valence Band ◽  
Conduction Band ◽  
High Temperatures ◽  
Hall Coefficient ◽  
Solidus Temperature ◽  
Energy Separation ◽  
Conduction Bands ◽  
Valence Bands

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the systems GaxIn1−xAs and InAsxSb1−xover a range of temperature from 200 up to 950 °K or to 20° below the solidus temperature of the particular specimen, whichever was lower. These data have then been analyzed in terms of equations involving all the occupied conduction and valence bands in the manner described previously by Coderre and Woolley. The results give the variation of the energy separation from the valence band of the (000) conduction-band minimum as a function of the composition and temperature for both alloy systems. For a certain range of x in the InAsxSb1−x alloys, a transition to the gray-tin band structure is observed at high temperatures.

Valence Band Physics in Wurtzite GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
T. Azuhata ◽  
T. Sota ◽  
S. Chichibu ◽  
A. Kuramata ◽  
K. Horino ◽  
...  
Keyword(s):  
Shear Deformation ◽  
Valence Band ◽  
Energy Gap ◽  
Free Exciton ◽  
Elastic Stiffness ◽  
Binding Energies ◽  
Deformation Potential ◽  
Orbit Splitting ◽  
Strain Dependence ◽  
Valence Bands

ABSTRACTWe present a summary of recent progress towards the understanding of the valence-band physics in wurtzite GaN. Systematic studies have been performed on the strain dependence of the free exciton resonance energies by photoreflectance measurements using well-characterized samples. Analyzing the experimental data with the Hamiltonian appropriate for the valence bands, the values have been determined of the crystal field splitting, the spin-orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free exciton ground states as well as on the valence band parameters. Using the obtained values and the generalized Elliott formula, the fundamental optical absorption spectra obtained experimentally were analyzed. The values of the elastic stiffness constants, which play a crucial role to determine the shear deformation potential constants, are also given.

Experimental Study of $\langle \hbox{110}\rangle$ Uniaxial Stress Effects on p-Channel GaAs Quantum-Well FETs

2011 ◽  
Vol 58 (8) ◽  
pp. 2597-2603 ◽  
Author(s):  
Ling Xia ◽  
Vadim Tokranov ◽  
Serge R. Oktyabrsky ◽  
Jesús A. del Alamo
Keyword(s):  
Experimental Study ◽  
Quantum Well ◽  
Uniaxial Stress ◽  
Stress Effects

Uniaxial stress effects on magnetoacoustic emission

2003 ◽  
Author(s):  
M. Namkung ◽  
R. DeNale ◽  
P.W. Kushnick ◽  
J.L. Grainger ◽  
R.G. Todhunter
Keyword(s):  
Uniaxial Stress ◽  
Magnetoacoustic Emission ◽  
Stress Effects

scholarly journals An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide

1998 ◽  
Vol 21 (3) ◽  
pp. 217-219 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Density Of States ◽  
Analytical Study ◽  
Electronic Density ◽  
Amorphous Silicon Carbide ◽  
Electronic Density Of States ◽  
Valence Bands ◽  
Hybrid Orbitals

A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end,sp3-type hybrid orbitals are employed.

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