Experimental Study of $\langle \hbox{110}\rangle$ Uniaxial Stress Effects on p-Channel GaAs Quantum-Well FETs

2011 ◽  
Vol 58 (8) ◽  
pp. 2597-2603 ◽  
Author(s):  
Ling Xia ◽  
Vadim Tokranov ◽  
Serge R. Oktyabrsky ◽  
Jesús A. del Alamo
Keyword(s):  
Experimental Study ◽  
Quantum Well ◽  
Uniaxial Stress ◽  
Stress Effects

scholarly journals Experimental Study of Uniaxial-Stress Effects on DC Characteristics of nMOSFETs

2010 ◽  
Vol 33 (2) ◽  
pp. 278-286 ◽  
Author(s):  
Masaaki Koganemaru ◽  
Toru Ikeda ◽  
Noriyuki Miyazaki ◽  
Hajime Tomokage
Keyword(s):  
Experimental Study ◽  
Uniaxial Stress ◽  
Stress Effects ◽  
Dc Characteristics

Uniaxial stress effects on magnetoacoustic emission

2003 ◽  
Author(s):  
M. Namkung ◽  
R. DeNale ◽  
P.W. Kushnick ◽  
J.L. Grainger ◽  
R.G. Todhunter
Keyword(s):  
Uniaxial Stress ◽  
Magnetoacoustic Emission ◽  
Stress Effects

Dependence of the Quantum Well Infrared Photodetector Absorption Wavelength on Uniaxial Stress

2011 ◽  
Vol 31 (11) ◽  
pp. 1104001
Author(s):  
张家鑫 Zhang Jiaxin ◽  
许丽萍 Xu Liping ◽  
温廷敦 Wen Tingdun ◽  
王忠斌 Wang Zhongbin
Keyword(s):  
Quantum Well ◽  
Uniaxial Stress ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Absorption Wavelength

Identity of the Nl8 Epr Spectrum with Thermal Donors in Silicon+

1985 ◽  
Vol 46 ◽  
Author(s):  
Keon M. Lee ◽  
J. M. Trombetta ◽  
G. D. Watkins
Keyword(s):  
Uniaxial Stress ◽  
Epr Spectrum ◽  
Stress Effects ◽  
Spectral Components ◽  
Dlts Spectra

AbstractThe effect of uniaxial stress on the NL8 EPR spectrum in 450°C heattreated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistent in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.

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