Valence Band Physics in Wurtzite GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
T. Azuhata ◽  
T. Sota ◽  
S. Chichibu ◽  
A. Kuramata ◽  
K. Horino ◽  
...  

ABSTRACTWe present a summary of recent progress towards the understanding of the valence-band physics in wurtzite GaN. Systematic studies have been performed on the strain dependence of the free exciton resonance energies by photoreflectance measurements using well-characterized samples. Analyzing the experimental data with the Hamiltonian appropriate for the valence bands, the values have been determined of the crystal field splitting, the spin-orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free exciton ground states as well as on the valence band parameters. Using the obtained values and the generalized Elliott formula, the fundamental optical absorption spectra obtained experimentally were analyzed. The values of the elastic stiffness constants, which play a crucial role to determine the shear deformation potential constants, are also given.

2017 ◽  
Vol 897 ◽  
pp. 250-253 ◽  
Author(s):  
Walter Klahold ◽  
Charles Tabachnick ◽  
Gabriel Freedman ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke

Differential absorption measurements were taken on ultra-pure boule pieces and epitaxial films of 4H SiC. The energy range of particular interest is from 3.40 eV to 3.52 eV. The free exciton energy gap associated with the second lowest conduction band at the M point in the Brillouin zone was determined to be EGX-2 = 3.4107 eV. This value is obtained from phonon assisted free exciton transitions involving the second conduction band measured in transmission with polarization E⊥c. The energy separation of the two lowest conduction bands is determined to be 144 ± 2 meV. Some replica peaks attributable to the spin orbit splitting in the valence band are also seen.


1967 ◽  
Vol 45 (1) ◽  
pp. 127-135 ◽  
Author(s):  
B. J. Slagsvold ◽  
C. F. Schwerdtfeger

The shift with uniaxial pressure in the g value of the ESR signal obtained from conductive iodine-doped CdS has been measured at ≈ 1.7 °K. For pressures parallel to the c axis, an average change in the g tensor of ≈ 9.4 × 10−7 cm2/kg was found, while for perpendicular pressures [Formula: see text] shifted an average of ≈ 4.4 × 10−7 cm2/kg. These shifts have been ascribed to a change in the energy gap separating the conduction-band minimum from the valence bands. They, as well as the change in the optical band gap with hydrostatic pressure as measured by Langer (1960), could be fairly well described by the approximate values 6.3 eV/unit longitudinal strain and 1.8 eV/unit transverse strain of the deformation potential constants for the gap.


1982 ◽  
Vol 60 (1) ◽  
pp. 10-15 ◽  
Author(s):  
S. Adan Lopez-Rivera ◽  
R. Gerald Goodchild ◽  
Owain H. Hughes ◽  
John C. Woolley ◽  
Brian R. Pamplin

Measurements of reflectance as a function of temperature from 4 to 300 K have been made on a single crystal sample of CuGaSnSe4 using light polarised (a) perpendicular and (b) parallel to the c axis of the crystal. Values of the energy gaps EA, EB, and EC between the three valence bands and the conduction band have thus been determined as a function of temperature. The variation of these energy gaps with temperature has been fitted to the equation proposed by Manoogian and Leclerc, i.e., E0 − E = UTs + Vθ(coth (θ/2T) − 1). Values of spin–orbit splitting Δso and crystal field splitting Δcf have been determined and the temperature variation of these explained in terms of contributions from d orbitals to the valence band. Values of the various spin–orbit splittings and deformation potentials are discussed.


1997 ◽  
Vol 482 ◽  
Author(s):  
A. A. Yamaguchi ◽  
Y. Mochizuki ◽  
C. Sasaoka ◽  
A. Kimura ◽  
M. Nido ◽  
...  

AbstractValence band modification by uniaxial stress in GaN is investigated by reflectance spectroscopy. It is observed that the energy separation between the A and B valence bands increases with the applied uniaxial stress in the c-plane. Changes of the wavefunctions by the stress are also investigated by the polarization characteristics of the reflectance spectra. The experimental results are analyzed on the basis of k•p theory, and deformation potential D5 is experimentally determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance.


1983 ◽  
Vol 61 (12) ◽  
pp. 2669-2678 ◽  
Author(s):  
G. M. Bancroft ◽  
D. J. Bristow

We report high resolution photoelectron spectra of both the valence bands and Tl 5d levels of the thallium halides (TlX; X = Cl, Br, I) in the gas phase. A transition state Xα-SW calculation on TlCl agrees with previous valence band assignments, although our calculated orbital characters are quite different from those reported previously. The calculated spin–orbit splitting of the 22II state in TlI is in good agreement with the observed value of 0.83 eV. Line width variations are rationalized considering the increase in covalency from TlCl to TlI, and variations in the slope of the excited state potential curve.Ligand field splitting of the Tl 5d level has been resolved in all three compounds. The observed values of the non-cubic part of the crystal field (C20) are: −0.0210 eV (TlCl), −0.0233 eV (TlBr), and −0.0258 eV (TlI). The above trend is due to the increasing covalency from TlCl to TlI, with a concomitant increase in the Tl 6p orbital population. Calculated C20 values are in good agreement with those observed. The configuration interaction structure in the Tl 5d region is explained qualitatively using Xα-SW calculations of two-hole valence band energies in TlCl.


1996 ◽  
Vol 198 (1) ◽  
pp. 343-348 ◽  
Author(s):  
G. Rau ◽  
P. C. Klipstein ◽  
V. Nikos Nicopoulos ◽  
N. F. Johnson ◽  
W. R. Tribe

2000 ◽  
Vol 61 (7) ◽  
pp. 4433-4436 ◽  
Author(s):  
Yong Zhang ◽  
A. Mascarenhas ◽  
H. P. Xin ◽  
C. W. Tu

2016 ◽  
Vol 4 (34) ◽  
pp. 8014-8019 ◽  
Author(s):  
Jiaolin Cui ◽  
Zheng Sun ◽  
Zhengliang Du ◽  
Yimin Chao

Mn substitution for Cu in Cu3Ga5Te9 engineers the energy gap (ΔEA) between impurity and valence bands, which is responsible for the reduction of the potential barrier for thermal excitation of carriers.


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