The Enhancement of Thermoelectric Power and Scattering of Carriers in Bi2−xSnxTe3 Single Crystals

1997 ◽  
Vol 478 ◽  
Author(s):  
V.A. Kulbachinskii ◽  
H. Negishi ◽  
M. Sasaki ◽  
Y. Giman ◽  
M. Inoue
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Impurity Band ◽  
Temperature Range ◽  
Intermediate Temperature Range ◽  
Lower Valence ◽  
P Type ◽  
Activation Type

AbstractThermoelectric power, electrical resistivity, and Hall effect of p-type Bi2−xSnxTe3 (0<x<0.03) singlecrystals have been measured in the temperature range 4.2–300K. By doping of Sn atoms into the host Bi2Te3 lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30–150 K for x≤0,0075. The activation type behaviour of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.

THE LOW-TEMPERATURE THERMAL CONDUCTIVITY, ELECTRICAL RESISTIVITY, AND THERMOELECTRIC POWER OF DILUTE SILVER ALLOYS WITH MANGANESE

1966 ◽  
Vol 44 (10) ◽  
pp. 2293-2302 ◽  
Author(s):  
H. L. Malm ◽  
S. B. Woods
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Thermoelectric Power ◽  
Electron Scattering ◽  
The Other ◽  
Temperature Measurements ◽  
Silver Alloys ◽  
Temperature Range ◽  
Dilute Alloy

Low-temperature measurements of electrical resistivity, thermal conductivity, and thermoelectric power on silver alloys containing 0.005, 0.067, 0.11, and 0.31 at.% of manganese are reported. The same specimens were used for the measurement of all properties over the temperature range from 2 to 25 °K. The well-known minimum and maximum are observed in the electrical resistivity of the three more concentrated alloys and the minimum is visible in the most dilute alloy near the lowest temperatures of measurement. Associated effects are observed in the other properties and their possible relationship to theoretical electron scattering mechanisms, particularly that of Kondo, is discussed.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

ELECTRICAL TRANSPORT PROPERTIES OF C60 SINGLE CRYSTALS DOPED WITH ALKALI METALS

1993 ◽  
Vol 07 (18) ◽  
pp. 1173-1192 ◽  
Author(s):  
HIRONORI OGATA ◽  
YUSEI MARUYAMA ◽  
TAMOTSU INABE ◽  
YOHJI ACHIBA ◽  
SINZO SUZUKI ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Fermi Energy ◽  
Electrical Transport ◽  
Alkali Metals ◽  
Power Measurement ◽  
Electrical Transport Properties ◽  
Linear Temperature ◽  
Power Measurements

Electronic structures of various kinds of alkali metal (Na, K, Rb or Cs)-doped C 60 solids are studied by electrical resistivity and thermoelectric power measurements by using C 60 single crystals prepared from a CS 2 solution as a starting material. For K-or Rb-doped C 60, metallic conducting behaviors in the normal conducting state and relatively sharp superconducting transitions are observed by the electrical resistivity measurements. Nearly linear-temperature dependences with the negative sign are observed in the thermoelectric power measurements at the normal conducting states for K-or Rb-doped C 60. From electron diffusion term of the thermoelectric power, the values of Fermi energy and the density of states at the Fermi energy are estimated by assuming the three-dimensional free electron model, which are in substantial agreement with the results of other experiments and calculations. "Metal–semiconductor transition" is observed in both the electrical resistivity and the thermoelectric power measurements for Na-doped C 60. Existence of metallic phase is confirmed by the thermoelectric power measurement in Cs-doped C 60.

scholarly journals Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1723 ◽  
Author(s):  
Karol Synoradzki ◽  
Kamil Ciesielski ◽  
Igor Veremchuk ◽  
Horst Borrmann ◽  
Przemysław Skokowski ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Small Magnitude ◽  
Single Phase Sample ◽  
Heusler Phase ◽  
Temperature Range ◽  
Arc Melting ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

Thermoelectric properties of the half-Heusler phase ScNiSb (space group F 4 ¯ 3m) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2–950 K. The material appeared as a p-type conductor, with a fairly large, positive Seebeck coefficient of about 240 μV K−1 near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 μΩm at 350 K), resulting in a rather small magnitude of the power factor (less than 1 × 10−3 W m−1 K−2) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m−1 K−1 occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures.

The thermoelectric power of ionic crystals II. Results for potassium chloride

1962 ◽  
Vol 267 (1328) ◽  
pp. 31-44 ◽  
Keyword(s):  
Temperature Gradient ◽  
Potassium Chloride ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Mole Fraction ◽  
Strontium Chloride ◽  
Ionic Crystals ◽  
Platinum Electrodes ◽  
Temperature Range ◽  
Experimental Scatter

The thermoelectric power of single crystals of pure potassium chloride and of potassium chloride containing 107 x 10 -5 mole fraction of strontium chloride has been measured in the temperature range 561 to 693 °C, platinum electrodes being used. The results for pure potassium chloride differ substantially from the value reported by Nikitinskaya & Murin (1955) and show much less experimental scatter. A large potential produced by the crystals in the absence of a temperature gradient in the temperature range 470 to 570 °C is briefly described. From the theory of thermoelectric power proposed by Allnatt & Jacobs (1961) the heat of transport of the cation is found to be 0*99 eV and that of the anion 2 J eV in the temperature range 560 to 690 °C. Reasons are discussed for the failure of the relation proposed by Holtan, Mazur & de Groot (1953), which implies that the sum of the heats of transport should be zero for pure potassium chloride.

Soft and Hard Modes of Deformation in Mosi2 Single Crystals

1994 ◽  
Vol 364 ◽  
Author(s):  
K. Ito ◽  
T. Yano ◽  
H. Inui ◽  
M. Yamaguchi
Keyword(s):  
Single Crystals ◽  
Plastic Flow ◽  
Deformation Behavior ◽  
Crystal Orientation ◽  
Room Temperature ◽  
Intermediate Temperature ◽  
Slip Systems ◽  
Anomalous Increase ◽  
Temperature Range ◽  
Intermediate Temperature Range

AbstractThe deformation behavior of MoSi2 single crystals has been studied in the temperature range of -196<1500°C. While [001]-oriented crystals can be plastically deformed only above 1300°C, plastic flow is possible from temperatures as low as room temperature for single crystals with orientations other than [001]. Five slip systems, {110)<111], {011)<100], {010)<100], {023)<100] and {013)<331], are identified to be operative, depending on crystal orientation. An anomalous increase in CRSS is observed in the intermediate temperature range for the former three slip systems. Schmid’s law is generally valid for the soft modes, {110)<111], {011)<100] and {023)<100]. In contrast, the CRSS for the hard mode, {013)<331], strongly depends on crystal orientation with the higher values for orientations closer to [001].

ELECTRICAL RESISTIVITY, HALL COEFFICIENT, AND THERMOELECTRIC POWER OF AuSb2 AND Cu2Sb

1964 ◽  
Vol 42 (3) ◽  
pp. 519-525 ◽  
Author(s):  
W. B. Pearson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Room Temperature ◽  
Iron Impurity

The electrical conductivity and absolute thermoelectric power of AuSb2 and Cu2Sb have been measured between 2.5° and 300 °K. Room-temperature Hall coefficients were also determined. Iron impurity causes a giant diffusion thermoelectric power at low temperatures in the compound Cu2Sb, as it has previously been found to do in Cu, Ag, and Au.

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