THE LOW-TEMPERATURE THERMAL CONDUCTIVITY, ELECTRICAL RESISTIVITY, AND THERMOELECTRIC POWER OF DILUTE SILVER ALLOYS WITH MANGANESE

1966 ◽  
Vol 44 (10) ◽  
pp. 2293-2302 ◽  
Author(s):  
H. L. Malm ◽  
S. B. Woods
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Thermoelectric Power ◽  
Electron Scattering ◽  
The Other ◽  
Temperature Measurements ◽  
Silver Alloys ◽  
Temperature Range ◽  
Dilute Alloy

Low-temperature measurements of electrical resistivity, thermal conductivity, and thermoelectric power on silver alloys containing 0.005, 0.067, 0.11, and 0.31 at.% of manganese are reported. The same specimens were used for the measurement of all properties over the temperature range from 2 to 25 °K. The well-known minimum and maximum are observed in the electrical resistivity of the three more concentrated alloys and the minimum is visible in the most dilute alloy near the lowest temperatures of measurement. Associated effects are observed in the other properties and their possible relationship to theoretical electron scattering mechanisms, particularly that of Kondo, is discussed.

The transport properties of rubidium, and electron–electron scattering

1979 ◽  
Vol 57 (6) ◽  
pp. 871-883 ◽  
Author(s):  
J.G. Cook
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Electron Scattering ◽  
Strong Evidence ◽  
Freezing Point ◽  
Thermal Contraction ◽  
Thomas Fermi

The electrical resistivity, thermal conductivity, and thermoelectric power of Rb have been measured between 40 and 300 K. Two of the samples were bare, to avoid thermal contraction difficulties; the softness of these samples necessitated further, calibration, measurements on a third sample in glass, just below the freezing point. The electrical resistivity values agree well with published values of Dugdale and Phillips. The Lorenz function, not previously examined in detail above 25 K, shows strong evidence of electron–electron scattering, of a strength intermediate to that calculated by Kukkonen for Thomas–Fermi screening, and for Geldart–Taylor screening. Such scattering appears to have affected the thermoelectric power as well.

Transport properties of solid and liquid Cs

1982 ◽  
Vol 60 (12) ◽  
pp. 1759-1769 ◽  
Author(s):  
J. G. Cook
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Melting Point ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Electron Scattering ◽  
Thermal Resistivity

The thermal conductivity, electrical resistivity, and thermoelectric power of Cs have been measured from 40 K, through the melting point which is near 300 K, up to 600 K. The thermal resistivity of both solid and liquid Cs contains a contribution from electron–electron scattering, which agrees well with theory. The electrical resistivity shows an appreciable "premelting" effect, which is tentatively attributed to impurities.

High-Temperature Transport Properties of Palladium

1972 ◽  
Vol 50 (3) ◽  
pp. 196-205 ◽  
Author(s):  
M. J. Laubitz ◽  
T. Matsumura
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Large Deviations ◽  
Thermoelectric Power ◽  
The Other ◽  
Band Model ◽  
Experimental Systems ◽  
Two Band Model ◽  
Pure Palladium

The thermal conductivity, electrical resistivity, and absolute thermoelectric power of pure palladium have been determined from 90 to 1300 K in two experimental systems of proven reliability. These properties are compared with the sparse available literature data, and show large deviations from them, particularly for the thermal conductivity at high temperatures. The results are also analyzed in terms of a simple two-band model, where one band contains the carriers, and the other acts as a trap into which phonons scatter the carriers. When the recent density of states values of Mueller et al. are used, the model predicts correctly the temperature variation of the electrical resistivity, and reasonably well its observed magnitude and the observed Wiedemann–Franz ratio. However, the model fails badly in respect to the absolute thermoelectric power, predicting values twice as large as the observed ones. Modifications to the model are suggested which may improve the fit between the predicted and observed values.

LSCO Ceramics as Possible Thermoelectric Material for Low Temperature Applications

2007 ◽  
Vol 1044 ◽  
Author(s):  
Julio E. Rodríguez
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Seebeck Coefficient ◽  
Annealing Time ◽  
Oxygen Stoichiometry ◽  
Measured Temperature ◽  
Total Thermal Conductivity ◽  
Metallic Behavior ◽  
Temperature Range

AbstractSeebeck coefficient S(T), thermal conductivity κ(T) and electrical resistivity ρ(T) measurements on polycrystalline La1.85Sr0.15CuO4-δ(LSCO) compounds grown by solid-state reaction method were carried out in the temperature range between 100 and 290K. The obtained samples were submitted to annealing processes of different duration in order to modify their oxygen stoichiometry. The Seebeck coefficient is positive over the measured temperature range and its magnitude increases with the annealing time up to reach values close to 150 µV/K. The electrical resistivity exhibits a metallic behavior, in all samples, ρ(T) takes values less than 1mΩ-cm. As the annealing time increases, the total thermal conductivity increases up to values close to 3 W/K-m. From S(T), κ(T) and ρ(T) data, the thermoelectric power factor (PF) and the dimensionless figure of merit (ZT) were determined. These parameters reach maximum values around 25 µW/K2-cm and 0.18, respectively. The observed behavior in the transport properties become these compounds potential thermoelectric materials, which could be used in low temperature thermoelectric applications.

Electron–electron scattering in potassium

1979 ◽  
Vol 57 (8) ◽  
pp. 1216-1223 ◽  
Author(s):  
J. G. Cook
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Thermoelectric Power ◽  
Electron Scattering ◽  
Noble Metals ◽  
Thermal Resistivity ◽  
Consistent Picture ◽  
Preliminary Study ◽  
Increasing Temperature

The electrical resistivity ρ, thermal conductivity κ, and thermoelectric power S have been measured for two bare K specimens between 80 and 330 K. The data fully support the main conclusions of an earlier, preliminary study by Cook and Laubitz. The Lorenz function L = κρ/T does not approach the Sommerfeld value L0 with increasing temperature. Both the magnitude and temperature dependence of L–L0 indicate the presence of an added term Wee in the thermal resistivity, due to electron–electron scattering. Such scattering also affects S. It is shown that the data for K, together with published values of B = Wee/T for Na, Rb, and the noble metals, form a consistent picture of electron–electron scattering in the monovalent metals above the Debye temperature.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Effect of grain size on low-temperature electrical resistivity and thermal conductivity of pure magnesium

2018 ◽  
Vol 229 ◽  
pp. 261-264 ◽  
Author(s):  
Xin Tong ◽  
Guoqiang You ◽  
Yuhan Ding ◽  
Hansong Xue ◽  
Yichang Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Pure Magnesium

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

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