Thermal Conductivity, Thermoelectric Power, and the Electrical Resistivity of Stoichiometric TiNi in the 3° to 300°K Temperature Range

1964 ◽  
Vol 35 (10) ◽  
pp. 2919-2927 ◽  
Author(s):  
J. F. Goff
1966 ◽  
Vol 44 (10) ◽  
pp. 2293-2302 ◽  
Author(s):  
H. L. Malm ◽  
S. B. Woods

Low-temperature measurements of electrical resistivity, thermal conductivity, and thermoelectric power on silver alloys containing 0.005, 0.067, 0.11, and 0.31 at.% of manganese are reported. The same specimens were used for the measurement of all properties over the temperature range from 2 to 25 °K. The well-known minimum and maximum are observed in the electrical resistivity of the three more concentrated alloys and the minimum is visible in the most dilute alloy near the lowest temperatures of measurement. Associated effects are observed in the other properties and their possible relationship to theoretical electron scattering mechanisms, particularly that of Kondo, is discussed.


2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.


2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.


1975 ◽  
Vol 53 (5) ◽  
pp. 486-497 ◽  
Author(s):  
J. G. Cook ◽  
M. J. Laubitz ◽  
M. P. Van der Meer

Data are presented for the thermal and electrical resistivity and thermoelectric power of two samples of Ca (having residual resistance ratios of 10 and 70) between 30 and 300 K. Large deviations from both Matthiessen's rule and the Wiedemann–Franz relationship are observed. The former are tentatively attributed to the presence of two distinct groups of carriers in Ca, and analyzed using the two band model. The latter deviations are interpreted as the effects of band structure. The thermoelectric power of Ca is large. In many respects the transport properties of Ca appear to be similar to those of the transition metals.


1993 ◽  
Vol 8 (9) ◽  
pp. 2299-2304 ◽  
Author(s):  
B. Nysten ◽  
J-P. Issi ◽  
H. Shioyama ◽  
M. Crespin ◽  
R. Setton ◽  
...  

The temperature variation of the thermal conductivity, the electrical resistivity, and the thermoelectric power of a graphitized polyimide film have been measured in the temperature range 2 < T < 300 K. The effect of the electrochemical intercalation with FeCl4− ions has also been studied. The thermal conductivity measurements confirm the high degree of graphitization that may be obtained with polyimide films. They show how intercalation increases the structural disorder and how the intercalate substantially contributes to the thermal conductivity at low temperatures. The electrical-resistivity and thermoelectric-power measurements reveal that the density of free carriers is about three times lower in stage-2 FeCl4− solvated intercalation compounds obtained by an electrochemical way than in stage-2 FeCl3 compounds obtained by a classical synthesis method.


2003 ◽  
Vol 793 ◽  
Author(s):  
Matthieu Puyet ◽  
Bertrand Lenoir ◽  
Anne Dauscher ◽  
Hubert Scherrer ◽  
Moukrane Dehmas ◽  
...  

ABSTRACTThe transport properties of the partially filled CaxCo4-yNiySb12 skutterudite compounds have been investigated in the 300 – 800 K temperature range. We underline the positive influence of the Ni substitution on the electrical resistivity and thermopower while the thermal properties – thermal conductivity – remains almost unaffected. These results suggest again a beneficial effect of Ni atoms on the dimensionless figure of merit in CoSb3 based compounds.


1984 ◽  
Vol 39 ◽  
Author(s):  
R. K. Williams ◽  
R. S. Graves ◽  
F. J. Weaver ◽  
D. L. McElroy

ABSTRACTThermal conductivity, electrical resistivity, Seebeck coefficient and thermal expansion data were obtained on well-annealed Ni3Al containing 24 and 25 at. % Al. The results span the temperature range 300 to 1000 K. The expansion coefficients did not vary with composition and increased with temperature, reaching values of aIout 17 × 10−6 K−1 at 1000 K. The thermal conductivity and electrical resistivity changed rapidly with composition, and the thermal conductivity of 24 at. % Al is as much as 30% lower than that for stoichiometric Ni3A1. The electronic Lorenz function of Ni3Al was obtained by subtracting the estimated phonon conductivity component and found to be within about 5% of the Sommerfeld prediction from 300 to 1000 K. The electrical resistivity results for stoichiometric Ni 3Al are influenced by the loss of ferromagnetic order at lower temperatures and are not adequately described by the Bloch-Grüneisen equation.


2002 ◽  
Vol 17 (5) ◽  
pp. 1092-1095 ◽  
Author(s):  
Gaojie Xu ◽  
Ryoji Funahashi ◽  
Ichiro Matsubara ◽  
Masahiro Shikano ◽  
Yuqin Zhou

Polycrystalline samples of Ca1-xBixMnO3 (0.02 ≤ x ≤ 0.20) were studied by means of x-ray diffraction, electrical resistivity (ρ), thermoelectric power (S), and thermal conductivity (κ) at high temperature. Bi doping leads to the lattice parameters a, b, and c increasing. And the ρ and the absolute value of S decrease rapidly with Bi doping. The largest power factor, S2/ρ, is obtained in the x = 0.04 sample, which is 3.6×10−4 Wm−1 K−2 at 400 K. The figures of merit (Z = S2/ρκ) for this sample and 1.0×10−4 and 0.86 × 10−4 K−1 at 600 and 1000 K, respectively.


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