ELECTRICAL RESISTIVITY, HALL COEFFICIENT, AND THERMOELECTRIC POWER OF AuSb2 AND Cu2Sb

1964 ◽  
Vol 42 (3) ◽  
pp. 519-525 ◽  
Author(s):  
W. B. Pearson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Room Temperature ◽  
Iron Impurity

The electrical conductivity and absolute thermoelectric power of AuSb2 and Cu2Sb have been measured between 2.5° and 300 °K. Room-temperature Hall coefficients were also determined. Iron impurity causes a giant diffusion thermoelectric power at low temperatures in the compound Cu2Sb, as it has previously been found to do in Cu, Ag, and Au.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Wärmeleitfähigkeit, elektrische Leitfähigkeit, Hall-Effekt, Thermospannung und spezifische Wärme von Ag2Se

1962 ◽  
Vol 17 (10) ◽  
pp. 886-889 ◽  
Author(s):  
Y. Baer ◽  
G. Busch ◽  
C. Fröhlich ◽  
E. Steigmeier
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Specific Heat ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
A Value ◽  
Price Formula ◽  
Elektrische Leitfähigkeit ◽  
Increasing Temperature

The thermal conductivity, electrical conductivity. Hall coefficient und thermoelectric power of Ag2Se have been measured between 80 and 600°K. In the low temperature semiconductor phase the thermal conductivity increases with increasing temperature due to the high amount of carrier contribution. The latter has been calculated using the Price formula. Agreement with experiment is satisfactory. The specific heat has been measured between 30 and 200°C. For the latent heat a value of (5.7 ± 0.5) cal/gr was determined in agreement with measurements of Bellati and Lussana 4. In addition to the transition at 133 °C an unknown new transition has been found at about 90 °C.

Enhancement of thermoelectric power factor in CrSi2 film via Si:B addition

2015 ◽  
Vol 29 (27) ◽  
pp. 1550189
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Raman Spectra ◽  
Power Factor ◽  
Low Temperatures ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray ◽  
Large Enhancement ◽  
Diffraction Patterns

In this paper, we report a large enhancement in the thermoelectric power factor in CrSi2 film via Si:B (1 at.% B content) addition. The Si:B-enriched CrSi2 films are prepared by co-sputtering CrSi2 and heavily B-doped Si targets. Both X-ray diffraction patterns and Raman spectra confirm the formation of the crystalline phase CrSi2. Raman spectra also indicate the crystallization of the added Si:B. With the addition of Si:B, the electrical resistivity [Formula: see text] decreases especially at low temperatures while the Seebeck coefficient [Formula: see text] increases above 533 K. As a result, the thermoelectric power factor, [Formula: see text], is greatly enhanced and can reach [Formula: see text] at 583 K, which is much larger than that of the pure CrSi2 film.

Research on Hall Effect of Graphene by Var Der Pauw Method

2015 ◽  
Vol 1120-1121 ◽  
pp. 383-387
Author(s):  
Yu Xiang Hui ◽  
Nan An ◽  
Kai Chen ◽  
Xiao Jun Li ◽  
Wei Long Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Hall Coefficient ◽  
Ohmic Contact ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Two Dimensional ◽  
Measurement Results ◽  
Hall Element

Graphene is a two-dimensional material consisting of single atomic layers of graphite. Its quality is markedly different from conventional graphite and semiconductor material. In this paper, electrical conductivity and Hall Effect of the graphene were measured at room temperature by Var der Pauw method. An ohmic contact of the sample and the electrodes was constructed and tested before the measurement of Hall Effect. With the help of the Var der Pauw method, the Hall voltages of the samples were measured under the static magnetic field and different input currents. Sequentially, a series of Hall parameters of graphene were obtained. The results shown that the Hall coefficient RH is 7.00*10-7 m3/C; the carrier concentration n is 10.52*1024 m-3 that is fifteen orders of magnitude bigger than silicon; the Hall element production sensitivity KH is 6.87*102 m2/C and the carrier mobility was 1,882.54 cm2·V-1·s-1 which is much bigger than silicon. The measurement results in this paper can provide some reference for graphene’s research and application in related areas.

Electrical resistivity measurements in palladium–hydrogen alloys

1968 ◽  
Vol 46 (18) ◽  
pp. 2065-2071 ◽  
Author(s):  
C. T. Haywood ◽  
L. Verdini
Keyword(s):  
Electrical Resistivity ◽  
Transition Metals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Resistivity Measurements ◽  
Order Of Magnitude ◽  
Rate Of Cooling ◽  
High Concentrations ◽  
Pure Palladium

The resistivity of palladium and palladium–hydrogen alloys has been studied in the temperature range 2–300 °K. At low temperatures (10 °K < T < 60 °K), it is found that ρ1 is proportional to Tn with n = 3.1 for pure palladium; but n decreases to 2.3 for an alloy with H/Pd = 0.25. For high concentrations and at low temperatures, the resistivity is found to be dependent upon the time and rate of cooling through the [Formula: see text] transformation. The residual resistivity is lower for faster cooling rates.The increase in resistivity due to 1 at. % hydrogen in palladium is calculated and found to be of the same order of magnitude as that for interstitials in other f.c.c. metals, but less then that found for hydrogen in the b.c.c. transition metals tantalum and niobium at room temperature.

THERMAL AND ELECTRICAL CONDUCTIVITY OF RHODIUM, IRIDIUM, AND PLATINUM

1957 ◽  
Vol 35 (3) ◽  
pp. 248-257 ◽  
Author(s):  
G. K. White ◽  
S. B. Woods
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
High Purity ◽  
Low Temperatures ◽  
Rapid Rate ◽  
Transition Elements ◽  
Electron Collisions ◽  
Electrical Conductivities ◽  
Electrical Resistivities ◽  
The Ideal

Measurements are reported of the thermal and electrical conductivities of the transition elements Rh, Ir, Pt in a state of high purity; the rapid rate of decrease of the "ideal" thermal and electrical resistivities with temperature, particularly in Rh and Ir, suggests that s–d transitions are not a dominant resistive mechanism at low temperatures in these metals, in contrast to palladium, iron, and nickel, which were studied previously. The electrical resistivity of platinum is in general agreement with the earlier results of de Haas and de Boer (1934); the quadratic dependence on temperature observed below about 10° K. suggests that electron–electron collisions may well be an important factor in this metal.

Electrical resistivity of gallium single crystals at low temperatures

1951 ◽  
Vol 209 (1099) ◽  
pp. 542-550 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
Single Crystals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Resistivity Measurements ◽  
Characteristic Temperatures ◽  
The Ideal

Electrical resistivity measurements on single crystals of gallium grown to conform approximately to the three axial directions have been extended to low temperatures, detailed investigation being made over the range 20.4 to 4.2° K. The anisotropy of this property increases in this region where the resistivity ratios for the three specimens are approximately 1: 2.1: 8 compared with 1: 2.1 6 : 6.5 5 at room temperature. The ‘ideal’ resistivity is proportional to T n , where n ≃ 4.45 for the range 5 to 12° K and decreases to about 3.9 for the range 12 to 20.4° K. The characteristic temperatures as derived from Grüneisen’s expression show relatively small differences for the three axial directions but decrease with decrease in temperature. Comparable variations with temperature are observed in the characteristic temperatures derived previously from specific heat measurements on gallium.

On The Thermoelectric Power And Transport Properties Of Quasicrystals

1998 ◽  
Vol 553 ◽  
Author(s):  
F. Cyrot-Lackmann
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Fermi Surface ◽  
Physical Properties ◽  
Thermoelectric Power ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Phonon Drag ◽  
Crude Estimate

Stable quasicrystals exhibit specific and unusual physical properties, such as, diamagnetism, low electrical conductivity, low thermal conductivity, and large themoelectric power at room temperature. These properties can be understood with a Bragg's reflexions scheme due to their dense filled reciprocal space.This leads to small gaps on the Fermi surface (some tenths of eV), much narrower than the usual Hume-Rothery ones (of order of 0.5 eV) which explain their stability. These gaps lead to the existence of quasi Umklapp processes, crucial for the interpretation of thermoelectric power. In some cases, the positive phonon drag contribution due to Umklapp processes, add with the electronic one's and dominates at room temperature with a large positive thermoelectric power. A crude estimate of the figure of merit gives some hope for applications of some quasicrystals and high approximants as new thermoelectric materials.

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