Characterization of Parylene-N Thin Films for Low-K Vlsi Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
Steven C. Selbrede ◽  
Martin L. Zucker
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Vapor Flow ◽  
Film Properties ◽  
Wafer Temperature ◽  
Process Pressure ◽  
Intermetal Dielectric ◽  
Low K ◽  
Extreme Care

AbstractParylene-N thin films were characterized from the viewpoint of advanced VLSI intermetal dielectric applications. All films were deposited in a prototype production system that included a vacuum chamber, electrostatic cold chuck and a parylene vapor delivery system. Chuck temperatures as low as -30 °C were achieved. The deposition rate was found to be strongly dependent on wafer temperature, increasing dramatically as wafer temperature is reduced. Deposition rate was also strongly dependent on the parylene vapor flow rate and process pressure. These strong dependencies require that extreme care be taken to achieve production worthy repeatability.A number of film properties were measured including; dielectric constant, refractive index, stress, adhesion, conformality, OH-content, metals-content and thermal stability.

Mechanical characterization of low-k and barrier dielectric thin films

2005 ◽  
Vol 82 (3-4) ◽  
pp. 368-373 ◽  
Author(s):  
N. Chérault ◽  
G. Carlotti ◽  
N. Casanova ◽  
P. Gergaud ◽  
C. Goldberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Characterization ◽  
Dielectric Thin Films ◽  
Low K

Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

2003 ◽  
Vol 82 (7) ◽  
pp. 1084-1086 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Eric K. Lin ◽  
Barry J. Bauer ◽  
Wen-li Wu ◽  
Byung Keun Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

scholarly journals Growth and characterization of MMA/SiO2 hybrid low-k thin films for interlayer dielectric applications

2010 ◽  
Vol 33 (3) ◽  
pp. 197-201 ◽  
Author(s):  
Bhavana N. Joshi ◽  
M. A. More ◽  
A. M. Mahajan
Keyword(s):  
Thin Films ◽  
Interlayer Dielectric ◽  
Low K

A study of deposition rate and characterization of bn thin films prepared by cvd

1998 ◽  
Vol 15 (6) ◽  
pp. 652-657 ◽  
Author(s):  
Yong-Gi Jin ◽  
Sang-Yeol Lee ◽  
Young-Woo Nam ◽  
Joong Kee Lee ◽  
Dalkeun Park
Keyword(s):  
Thin Films ◽  
Deposition Rate

Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

2019 ◽  
Vol 17 (17) ◽  
pp. 27-32
Author(s):  
Chouaieb Zaouche ◽  
Yacine Aoun ◽  
Said Benramache ◽  
Abdelouahab Gahtar
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Deposition Rate ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Band Gap Energy ◽  
Electrical And Optical Properties ◽  
Minimum Value ◽  
Average Transmittance

AbstractIn this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.

Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS

2003 ◽  
Vol 766 ◽  
Author(s):  
Ronald C. Hedden ◽  
Barry J. Bauer ◽  
Hae-Jeong Lee
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Mass Density ◽  
Solvent Mixture ◽  
Wall Material ◽  
Ion Scattering ◽  
Low Dielectric ◽  
The Matrix ◽  
Low K

AbstractSmall-angle neutron scattering (SANS) contrast variation is used to characterize matrix properties and pore size in nanoporous low-dielectric constant (low-k) thin films. Using a vapor adsorption technique, SANS measurements are used to identify a “contrast match” solvent mixture containing the hydrogen– and deuterium-containing versions of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. With information from specular X-ray reflectivity and ion scattering, the technique is useful for estimating the mass density of the matrix (wall) material and the pore size distribution. To illustrate the technique, a porous methylsilsesquioxane (MSQ) spin-on dielectric is characterized.

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