A study of deposition rate and characterization of bn thin films prepared by cvd

1998 ◽  
Vol 15 (6) ◽  
pp. 652-657 ◽  
Author(s):  
Yong-Gi Jin ◽  
Sang-Yeol Lee ◽  
Young-Woo Nam ◽  
Joong Kee Lee ◽  
Dalkeun Park
Keyword(s):  
Thin Films ◽  
Deposition Rate

Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

2019 ◽  
Vol 17 (17) ◽  
pp. 27-32
Author(s):  
Chouaieb Zaouche ◽  
Yacine Aoun ◽  
Said Benramache ◽  
Abdelouahab Gahtar
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Deposition Rate ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Band Gap Energy ◽  
Electrical And Optical Properties ◽  
Minimum Value ◽  
Average Transmittance

AbstractIn this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.

Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Deposition Rate ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Good Crystallinity ◽  
Relationship Of

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

Characterization of TiO2 Thin Films Prepared by Vacuum Evaporation

2014 ◽  
Vol 887-888 ◽  
pp. 783-786 ◽  
Author(s):  
Li Li Wang ◽  
Yi Wei Zhang ◽  
Chun Mei Zhang ◽  
Zheng Duo Wang ◽  
Tao Meng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Tio2 Thin Film ◽  
Amorphous Structure ◽  
Vacuum Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Atomic Force

The TiO2 thin films were prepared by vacuum evaporation on glass using TiO2 powder 99.99% as coating material and with varying deposition speed. The TiO2 thin films were characterized by a-step device, X-ray diffraction (XRD), atomic force microscope (AFM). The influence of deposition rate were discussed. The results indicated that thickness of the TiO2 thin film was prepared under the deposition rate of 4Å/sec was 200 nm at room temperature, with amorphous structure. The film changed to anatase crystal structure when was annealed at 450 °C for one hour and the TiO2 thin film was uniform and well combined with the glass substrate.

Characterization of Parylene-N Thin Films for Low-K Vlsi Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
Steven C. Selbrede ◽  
Martin L. Zucker
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Vapor Flow ◽  
Film Properties ◽  
Wafer Temperature ◽  
Process Pressure ◽  
Intermetal Dielectric ◽  
Low K ◽  
Extreme Care

AbstractParylene-N thin films were characterized from the viewpoint of advanced VLSI intermetal dielectric applications. All films were deposited in a prototype production system that included a vacuum chamber, electrostatic cold chuck and a parylene vapor delivery system. Chuck temperatures as low as -30 °C were achieved. The deposition rate was found to be strongly dependent on wafer temperature, increasing dramatically as wafer temperature is reduced. Deposition rate was also strongly dependent on the parylene vapor flow rate and process pressure. These strong dependencies require that extreme care be taken to achieve production worthy repeatability.A number of film properties were measured including; dielectric constant, refractive index, stress, adhesion, conformality, OH-content, metals-content and thermal stability.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Deposition and Characterization of Al2O3 and BiFeO3 Thin Films on Titanium Substrates for Tough MEMS Devices

2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Mems Devices ◽  
Titanium Substrates

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization
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