Chemical-Mechanical Polishing of Polymer Films: Comparison of Benzocyclobutene(BCB) and Parylene-N Films by XPS and AFM

1997 ◽  
Vol 476 ◽  
Author(s):  
G.-R. Yang ◽  
Y.-P. Zhao ◽  
Jan M. Neirynck ◽  
Shyam P. Murarka ◽  
Ronald J. Gutmann
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Surface Characteristics ◽  
Mechanical Polishing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Good For ◽  
Deposited Film ◽  
Post Deposition

AbstractThe quality of benzocyclobutene (BCB) and Parylene-N (PA-N) films after chemical-mechanical polishing (CMP) is influenced by 3 factors: slurry composition, quality of the as-deposited film or post-deposition treated film, and polishing time. The quality of the films has been investigated by using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). It is shown that the higher the quality of the as-deposited film (or post-deposition treated film), the higher the quality of the polished film. The polishing time has little effect on the surface characteristics of high quality PA-N films, however it has an effect on BCB film. This is attributed to the structure and thermal-stability and higher chemical resistance of PA-N. The RMS surface roughness measured by AFM, for as-deposited PA-N is 90Å. The roughness after CMP processes is greater than 200Å. The roughness for as-spin-coated and polished BCB film is 5A, and 20Å, respectively. The morphology of the PA-N film, either as-deposited or polished, is not as good as the BCB film. A slurry which is good for BCB polishing is not good for PA-N polishing, and vice versa. These results indicate that the nature of the polymer film, including its chemical structure as well as the quality of the as-deposited/post-deposition treated film, plays an important role in polymer CMP.

Effect of pH on ceria–silica interactions during chemical mechanical polishing

2005 ◽  
Vol 20 (5) ◽  
pp. 1139-1145 ◽  
Author(s):  
Jeremiah T. Abiade ◽  
Wonseop Choi ◽  
Rajiv K. Singh
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Substrate Interaction ◽  
Atomic Force ◽  
Silica Removal

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

The Integration of Interlayer Dielectric Deposition and Chemical Mechanical Polishing

1997 ◽  
Vol 477 ◽  
Author(s):  
Anda McAfee ◽  
Daniel A. Koos ◽  
Stephen mcArdle ◽  
Mercedes Jacobs ◽  
Robert Hiatt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Important Process ◽  
Interlayer Dielectric ◽  
X Ray ◽  
Force Microscopy ◽  
Interfacial Delamination ◽  
Atomic Force ◽  
Process Issue

ABSTRACTThis paper addresses an important process issue in tie integration of chemical mechanical polishing (CMP) with interlayer dielectric (ILD) deposition for advanced back end processing. Gap fill between metal lines is achieved by using a dep-etch-dep technique for the tetraethylorthosilicate (TEOS) ILD deposition. The ILD layer is then planarized by CMP. Vias are etched through the ILD and filled with tungsten plugs in a blanket tungsten deposition and tungsten CMP sequence. Delamination has been observed at the interface between the TEOS layers following the blanket tungsten deposition and before or during tungsten CMP. The weak interface between the TEOS layers was found to be the result of residual carbon and fluorine from the tetraflouromethane (CF4) doped etch process. The interface between the TEOS layers was examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Experiments were carried out to determine if the residue and subsequent delamination could be eliminated by modifying the dep-etch-dep process. An improved process was identified and has been implemented on a 0.5μm CMOS and mixed-mode BiCMOS production line with no subsequent occurrence of interfacial delamination.

scholarly journals Effect of Sputtering Temperature on Fluorocarbon Films: Surface Nanostructure and Fluorine/Carbon Ratio

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 848 ◽  
Author(s):  
Qi Zhao ◽  
Feipeng Wang ◽  
Kaizheng Wang ◽  
Guibai Xie ◽  
Wanzhao Cui ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Target Material ◽  
Chemical Compositions ◽  
Water Contact ◽  
Force Microscopy ◽  
Fluorocarbon Films ◽  
Atomic Force ◽  
Surface Nanostructure ◽  
Deposited Film ◽  
Fluorocarbon Film

In this work, fluorocarbon film was deposited on silicon (P/100) substrate using polytetrafluoroethylene (PTFE) as target material at elevated sputtering temperature. Field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to investigate the surface morphology as well as structural and chemical compositions of the deposited film. The surface energy, as well as the polar and dispersion components, were determined by water contact angle (WCA) measurement. The experimental results indicated that increasing sputtering temperature effectively led to higher deposition rate, surface roughness and WCA of the film. It was found that the elevated temperature contributed to increasing saturated components (e.g., C–F2 and C–F3) and decreasing unsaturated components (e.g., C–C and C–CF), thus enhancing the fluorine-to-carbon (F/C) ratio. The results are expected aid in tailoring the design of fluorocarbon films for physicochemical properties.

scholarly journals The Oleofobization of Paper via Plasma Treatment

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2148
Author(s):  
Matic Resnik ◽  
Eva Levičnik ◽  
Žiga Gosar ◽  
Rok Zaplotnik ◽  
Janez Kovač ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Surface Characteristics ◽  
High Volume ◽  
Barrier Properties ◽  
Contact Angles ◽  
Plasma Reactors ◽  
Force Microscopy ◽  
Atomic Force ◽  
Secondary Ion

Cellulose is a promising biomass material suitable for high volume applications. Its potential lies in sustainability, which is becoming one of the leading trends in industry. However, there are certain drawbacks of cellulose materials which limit their use, especially their high wettability and low barrier properties, which can be overcome by applying thin coatings. Plasma technologies present a high potential for deposition of thin environmentally friendly and recyclable coatings. In this paper, two different plasma reactors were used for coating two types of cellulose-based substrates with hexamethyldisiloxane (HMDSO). The changes in surface characteristics were measured by atomic force microscopy (AFM), scanning electron microscopy (SEM), surface free energy and contact angles measurements, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). Successful oleofobization was observed for an industrial scale reactor where pure HMDSO was used in the absence of oxygen.

scholarly journals Modification of FA0.85MA0.15Pb(I0.85Br0.15)3 Films by NH2-POSS

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1544
Author(s):  
Yangyang Zhang ◽  
Na Liu ◽  
Haipeng Xie ◽  
Jia Liu ◽  
Pan Yuan ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Spin Coating ◽  
Surface Composition ◽  
Morphological Changes ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coating Method

The surface composition and morphology of FA0.85MA0.15Pb(I0.85Br0.15)3 films fabricated by the spin-coating method with different concentrations of NH2-POSS were investigated with atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and Fourier transform infrared spectroscopy (FTIR). It was found that the surface composition of the FA0.85MA0.15Pb(I0.85Br0.15)3 films was changed regularly through the interaction between NH2-POSS and the perovskite film. The corresponding surface morphological changes were also observed. When the concentration of NH2-POSS exceeded 10 mg/mL, a lot of cracks on the surface of the perovskite film were observed and the surface morphology was damaged. The surface composition and its distribution can be adjusted by changing the concentration of NH2-POSS and the proper concentration of NH2-POSS can substantially improve the quality of perovskite film.

scholarly journals Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 954
Author(s):  
Rashid Dallaev ◽  
Dinara Sobola ◽  
Pavel Tofel ◽  
Ľubomir Škvarenina ◽  
Petr Sedlák
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Nitrogen Atmosphere ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Secondary Ion

The aim of this study is motivated by the pursuit to investigate the performance of new and as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum Al(C4H9)3 in the AlN atomic layer deposition (ALD) process as well as to study effects of successive annealing on the quality of the resulting layer. Both precursors are significantly cheaper than their conventional counterparts while also being widely available and can boast easy handling. Furthermore, Al(C4H9)3 being a rather large molecule might promote steric hindrance and prevent formation of undesired hydrogen bonds. Chemical analysis is provided by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS) techniques; surface morphology was studied using atomic force microscopy (AFM). Chlorine containing precursors such as AlCl3 are usually avoided in ALD process due to the risk of chamber contamination. However, experimental data of this study demonstrated that the use of N2H5Cl does not result in chlorine contamination due to the fact that temperature needed for HCl molecules to become reactive cannot be reached within the AlN ALD window (200–350 °C). No amount of chlorine was detected even by the most sensitive techniques such as SIMS, meaning it is fully removed out of the chamber during purge stages. A part of the obtained samples was subjected to annealing (1350 °C) to study effects of high-temperature processing in nitrogen atmosphere, the comparisons with unprocessed samples are provided.

Effect of Citric Acid in Chemical Mechanical Polishing (CMP) for Lithium Tantalate (LiTaO3) Wafer

2016 ◽  
Vol 1136 ◽  
pp. 305-310 ◽  
Author(s):  
Hyun Seop Lee
Keyword(s):  
Citric Acid ◽  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
High Surface ◽  
Lithium Tantalate ◽  
Mechanical Polishing ◽  
High Surface Quality ◽  
Force Microscopy ◽  
Atomic Force

Lithium tantalate (LiTaO3) has piezoelectric, electro-optical and nonlinear optical characteristics, and a wide transparency range going from ultraviolet to infrared. It is desirable that LiTaO3 wafer was a smooth surface in order to function with good quality. Chemical mechanical polishing (CMP) has been used to planarize integrated circuits (ICs) or obtain a high surface quality of the substrates. This paper investigates the effect of citric acid as an additive in the slurry for LiTaO3 CMP. The roughness of the wafers was measured by an atomic force microscopy (AFM, XE-100) after polishing. The slurry, which contains citric acid as an additive, has a higher material removal rate and friction force than a slurry without an additive. After polishing, the surface roughness of the LiTaO3 wafer can be reduced down to 1.7Å of Ra.

Effect of Different Acid Treatment on Surface Characteristics of Titanium Alloy

2011 ◽  
Vol 694 ◽  
pp. 490-496 ◽  
Author(s):  
De Gui Zhang ◽  
Hai Mei Cheng ◽  
Ying Jun Wang ◽  
Cheng Yun Ning
Keyword(s):  
Titanium Alloy ◽  
Photoelectron Spectroscopy ◽  
Acid Treatment ◽  
Sessile Drop ◽  
Surface Characteristics ◽  
Acid Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Titanium Alloy Ti6al4v

This study was aimed to investigate the effects of acid treatment on the surfacee characteristics ofgrit-blasted titanium alloy (Ti6Al4V). These treatments included (a) Al2O3 blasting, (b) Al2O3 blasting + HF acid etching, (c) Al2O3 blasting + HCl/H2SO4 acid etching, and (d) Al2O3 blasting + HF acid etching + HCl/H2SO4 acid etching. The surface topography and chemical composition of the samples were identified by field-emission scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. Roughness of the as-treated samples was obtained from atomic force microscopy (AFM) and profilometry. Wettability of the samples was measured using sessile drop method. The results showed that porous structure on the surface of titanium alloy was prepared by dual acid etching treatment and the surfaces treated with acid had higher roughness and better wettability than the surface treated only by grit-blasting.

Surface-particle interactions in the chemical mechanical polishing process

1997 ◽  
Vol 501 ◽  
Author(s):  
J. J. Adler ◽  
Y. I. Rabinovich ◽  
R. K. Singh ◽  
B. M. Moudgil
Keyword(s):  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Difficult Problem ◽  
Mechanical Polishing ◽  
Particle Interactions ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chemical Mechanical Polishing Process ◽  
Surface Particle ◽  
The Stability

ABSTRACTChemical mechanical polishing (CMP) is a critical step in the fabrication of integrated circuits. Each layer of deposited material must be planarized before the next layer of circuitry can be formed. In CMP, a chemically active solution is used to modify the substrate so that a particulate abrasive may polish more efficiently. Modification of the surface often requires high oxidizer concentrations or pH extremes. Under these circumstances the stability of the polishing slurry and prevention of particulate attachment to the substrate is a difficult problem. In this study, atomic force microscopy (AFM) has been used to directly measure the forces between surfaces that simulate those in CMP. Initial investigation has focused on modeling the polishing of tungsten interconnect material by alumina slurries at acidic pH and evaluating the role surfactants can play in the stabilization of the polishing slurry and CMP processes.

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