MOCVD Precursor Delivery Monitored and Controlled Using UV Spectroscopy

1997 ◽  
Vol 474 ◽  
Author(s):  
Brian J. Rappoli ◽  
William J. DeSisto ◽  
Tobin J. Marks ◽  
John A. Belot
Keyword(s):  
Thin Films ◽  
Gas Phase ◽  
Uv Spectroscopy ◽  
Mixed Metal Oxide ◽  
Feedback Control System ◽  
Metal Oxide Films ◽  
Mocvd Growth ◽  
Mocvd Precursor ◽  
Htsc Thin Films

ABSTRACTThe glyme adducts of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate)barium, Ba(hfac)2•glyme, are frequently employed as precursors in the MOCVD fabrication of HTSC thin films. The physical properties of these precursors can be modified by changing the glyme ligand in the barium complex. In this study, gas phase concentrations of two barium complexes as a function of purge time and bubbler temperature have been examined by in-situ UV spectroscopy. Also presented are the details of a UV spectrophotometric-based feedback control system designed to maintain constant gas phase concentration of 2,2,6,6-tetramethyl-3,5-heptadionate (thd) precursors, Cu(thd)2 and Y(thd)3, during MOCVD growth of mixed metal oxide films.

scholarly journals A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

1995 ◽  
Vol 05 (C5) ◽  
pp. C5-183-C5-190 ◽  
Author(s):  
S. E. Alexandrov ◽  
A. Y. Kovalgin ◽  
D. M. Krasovitskiy
Keyword(s):  
Gallium Nitride ◽  
Gas Phase ◽  
Uv Spectroscopy

In-situ kinetics study of gas phase formation in the system Ga/In-AsCl 3 -HCl-H 2 by UV spectroscopy

2001 ◽  
Author(s):  
Valery A. Voronin ◽  
Sergey K. Guba ◽  
Marina A. Litvin ◽  
A. Y. Kulikov
Keyword(s):  
Gas Phase ◽  
Phase Formation ◽  
Uv Spectroscopy ◽  
Kinetics Study

scholarly journals In situ mass spectrometry analysis of chemical vapour deposition of TiO2 thin films to study gas phase mechanisms

RSC Advances ◽  
2016 ◽  
Vol 6 (113) ◽  
pp. 111797-111805 ◽  
Author(s):  
Ben J. Blackburn ◽  
Charalampos Drosos ◽  
Dean B. Brett ◽  
Michael A. Parkes ◽  
Claire J. Carmalt ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Mass Spectrometry Analysis ◽  
Tio2 Thin Films ◽  
Spectrometry Analysis

In situ mass spectrometry measurements has been used to study as phase intermediates in CVD of TiO2 thin films.

Electron Channeling Pattern: A Tool for Studying YBaCuO-HTSC Thin Films

1990 ◽  
Vol 209 ◽  
Author(s):  
K. H. Young ◽  
J. Z. Sun ◽  
T. W. James ◽  
B. J. L. Nilsson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Epitaxial Films ◽  
Superconducting Thin Films ◽  
High Angle ◽  
Electron Channeling ◽  
Incident Electron Beam ◽  
Htsc Thin Films ◽  
Non Destructive

ABSTRACTHigh Tc superconducting (HTSC) films synthesis for demanding applications requires epitaxial c-axis growth without high angle grain boundaries. Electron channeling pattern (ECP) analysis using a scanning electron microscope is a non-destructive, fast, direct,and economical tool to determine the orientation and crystallinity of epitaxial films. We have successfully employed this technique to examine our in-situ laser ablated YBa2Cu307−δ superconducting thin films grown on LaAI03 (100) substrates. By changing the energy of the incident electron beam, we can also monitor the film quality vs. depth. The surface bending of YBa2Cu3O7−δ thin films due to the cubic-rhombohedral transition of LaAI03 substrates is also visiblewhen sharp ECPs are present. For films with rough surfaces, the ECP contrast is obscured by unwanted contrast arising from surface features. This unwanted contrast can be minimized by defocusing the electron beam.

Thermodynamic Constraints for the In Situ MOCVD Growth of Superconducting Tl-Ba-Ca-Cu-O Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
William L. Holstein
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Deposition Processes ◽  
Organic Chemical Vapor Deposition

AbstractIn spite of several attempts, superconducting Tl-Ba-Ca-Cu-O thin films have not been successfully prepared in situ by metal organic chemical vapor deposition (MOCVD). Preparation of a phase by MOCVD requires that it be thermodynamically stable with respect to its decomposition into volatile species and other condensed phases. For MOCVD growth of Tl-Ba- Ca-Cu-O compounds in the presence of oxygen from reagents containing only C-H or C-H-O ligands, Tl2O(g) and TIOH(g) exhibit appreciable volatility. If reagents with ligands containing fluorine are used, the formation of volatile TIF(g) must also be considered. Thermodynamic data for these materials are compiled, and thermodynamic relationships between these gases, H2O(g) and HF(g) are established. The thermodynamic stability of TIOH(g) and TIF(g) makes the in situ growth of Tl-Ba-Ca-Cu-O compounds by MOCVD more difficult than their in situ growth by physical vapor deposition processes, for which Tl2O(g) is the only volatile TI-containing species present.

Initial stages of TiO2 thin films MOCVD growth studied by in situ surface analyses

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1263-e1268 ◽  
Author(s):  
A. Brevet ◽  
P.M. Peterlé ◽  
L. Imhoff ◽  
M.C. Marco de Lucas ◽  
S. Bourgeois
Keyword(s):  
Thin Films ◽  
Tio2 Thin Films ◽  
Mocvd Growth

MOCVD HTSC Precursor Delivery Monitored By UV Spectroscopy

1995 ◽  
Vol 415 ◽  
Author(s):  
Brian J. Rappoli ◽  
William J. DeSisto
Keyword(s):  
Gas Phase ◽  
Uv Spectroscopy ◽  
Diagnostic Technique ◽  
Chemical Vapor ◽  
Test System ◽  
Small Scale ◽  
Mocvd Reactor ◽  
Phase Concentration ◽  
Scale Test

ABSTRACTUV spectroscopy has been used as an in situ diagnostic to measure the gas phase concentration of 2,2,6,6-tetramethyl-3,5-heptanedionate (thd) complexes of Ba, Cu and Y in metalorganic chemical vapor deposition (MOCVD) bubbler effluent. These precursors for MOCVD synthesis of YBa2Cu37−δ (YBCO) show marked instability in gas phase concentration as a function of time during bubbler purge. The UV diagnostic technique has been applied to both a small scale test system and a commercial scale MOCVD reactor.

Transparent, Conducting ATO Thin Films by Epoxide-Initiated Sol–Gel Chemistry: A Highly Versatile Route to Mixed-Metal Oxide Films

2012 ◽  
Vol 4 (5) ◽  
pp. 2464-2473 ◽  
Author(s):  
Matthias M. Koebel ◽  
Digambar Y. Nadargi ◽  
Giselle Jimenez-Cadena ◽  
Yaroslav E. Romanyuk
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Mixed Metal Oxide ◽  
Metal Oxide Films ◽  
Mixed Metal ◽  
Transparent Conducting

Excimer Laser Induced Deposition of Bisrcacuo Htsc Thin Films and Buffer Layers -Depth Profiling by SNMS

1992 ◽  
Vol 285 ◽  
Author(s):  
M. Lqrenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
K. Unger
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Decomposition Temperature ◽  
Buffer Layers ◽  
In Situ Deposition ◽  
Htsc Thin Films ◽  
Insight Into

ABSTRACTSecondary Neutrals Mass Spectrometry SNMS was used to investigate interdiffusion processes in laser deposited BiSrCaCuO HTSC thin films on various substrate materials. The in-situ deposition of epitaxial Bi2Sr2Ca1Cu2O8+x films requires a substrate temperature just below the decomposition temperature of the 2212 -phase of BiSrCaCuO. This high substrate temperature of about 850°C seems to be the reason for interdiffusion processes of BiSrCaCuO films and MgO(100), YSZ(100) and Si(100) with YSZ or SrTiO3 buffer layers as substrate materials. Therefore, Tc(R=0) of BiSrCaCuO films on silicon with buffer layer is not higher than 70 K at present. SNMS depth profiling gives a more detailed insight into interdiffusion phenomena than other analytical techniques.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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