Excimer Laser Induced Deposition of Bisrcacuo Htsc Thin Films and Buffer Layers -Depth Profiling by SNMS

1992 ◽  
Vol 285 ◽  
Author(s):  
M. Lqrenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
K. Unger
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Decomposition Temperature ◽  
Buffer Layers ◽  
In Situ Deposition ◽  
Htsc Thin Films ◽  
Insight Into

ABSTRACTSecondary Neutrals Mass Spectrometry SNMS was used to investigate interdiffusion processes in laser deposited BiSrCaCuO HTSC thin films on various substrate materials. The in-situ deposition of epitaxial Bi2Sr2Ca1Cu2O8+x films requires a substrate temperature just below the decomposition temperature of the 2212 -phase of BiSrCaCuO. This high substrate temperature of about 850°C seems to be the reason for interdiffusion processes of BiSrCaCuO films and MgO(100), YSZ(100) and Si(100) with YSZ or SrTiO3 buffer layers as substrate materials. Therefore, Tc(R=0) of BiSrCaCuO films on silicon with buffer layer is not higher than 70 K at present. SNMS depth profiling gives a more detailed insight into interdiffusion phenomena than other analytical techniques.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-situ deposition of superconducting YBCO films on Si with ceramic buffer layers

1993 ◽  
Vol 1 (3-6) ◽  
pp. 815-826 ◽  
Author(s):  
J.Y. Juang ◽  
K.H. Wu ◽  
T.C. Lai ◽  
M.H. Lee ◽  
M.C. Hseih ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Ybco Films ◽  
In Situ Deposition

IN-SITU PREPARATION OF YBa2Cu3O7 SUPERCONDUCTING THIN FILMS BY PULSED Nd:YAG LASER DEPOSITION

1992 ◽  
Vol 06 (08) ◽  
pp. 477-483 ◽  
Author(s):  
QINGXIN SU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
HUIBIN LU ◽  
YONGJUN TIAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nd:Yag Laser ◽  
Ac Susceptibility ◽  
Substrate Surface ◽  
Zero Magnetic Field ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
Zero Resistance

High-T c superconducting thin films of YBa 2 Cu 3 O 7 were grown in-situ on (100) SrTiO 3 substrates by Nedymium:yttrium aluminum garnet [Nd:YAG] laser ablation. The effects of the substrate temperature on the transition temperature, microcrystalline structure and surface morphology of the films were discussed. Best results were obtained in the 730°–770°C range. X-ray diffraction analysis showed that these films were highly c-oriented with the c-axis perpendicular to the substrate surface. At the optimum substrate temperature, a very smooth morphology with only a few small particles were observed by scanning electron microscopy. The zero resistance temperature of these films were ≥ 90 K with a narrow transition width and the ac susceptibility measurement also gave the same result. The highest critical current density obtained at 77 K and zero magnetic field was 3.8 × 106 A/cm 2.

In Situ Deposition of YBCO Thin Films by Sputtering under Low Oxygen Partial Pressure

1994 ◽  
Vol 33 (Part 2, No. 5B) ◽  
pp. L718-L721 ◽  
Author(s):  
Yong Ki Park ◽  
Keunseop Park ◽  
Soon-Gul Lee ◽  
Dong Chan Shin ◽  
Jong-Chul Park
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Ybco Thin Films ◽  
In Situ Deposition

In situ deposition of MgB2 thin films by magnetron cosputtering and sputtering combined with thermal evaporation

2005 ◽  
Vol 423 (3-4) ◽  
pp. 89-95 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
G. Linker ◽  
F. Ratzel ◽  
A.G. Zaitsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
In Situ Deposition ◽  
Mgb2 Thin Films

MOCVD Precursor Delivery Monitored and Controlled Using UV Spectroscopy

1997 ◽  
Vol 474 ◽  
Author(s):  
Brian J. Rappoli ◽  
William J. DeSisto ◽  
Tobin J. Marks ◽  
John A. Belot
Keyword(s):  
Thin Films ◽  
Gas Phase ◽  
Uv Spectroscopy ◽  
Mixed Metal Oxide ◽  
Feedback Control System ◽  
Metal Oxide Films ◽  
Mocvd Growth ◽  
Mocvd Precursor ◽  
Htsc Thin Films

ABSTRACTThe glyme adducts of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate)barium, Ba(hfac)2•glyme, are frequently employed as precursors in the MOCVD fabrication of HTSC thin films. The physical properties of these precursors can be modified by changing the glyme ligand in the barium complex. In this study, gas phase concentrations of two barium complexes as a function of purge time and bubbler temperature have been examined by in-situ UV spectroscopy. Also presented are the details of a UV spectrophotometric-based feedback control system designed to maintain constant gas phase concentration of 2,2,6,6-tetramethyl-3,5-heptadionate (thd) precursors, Cu(thd)2 and Y(thd)3, during MOCVD growth of mixed metal oxide films.

Deposition of MgB2 Thin Films on Nb Substrates Using an In Situ Annealing PLD Method

2007 ◽  
Vol 546-549 ◽  
pp. 2027-2030 ◽  
Author(s):  
Yue Zhao ◽  
Yi Sun Wu ◽  
S.X. Dou ◽  
T. Tajima ◽  
O.S. Romanenko
Keyword(s):  
Thin Films ◽  
Large Scale ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Rf Cavities ◽  
Superconducting Rf ◽  
Mgb2 Thin Films ◽  
Scanning Electron

MgB2 thin films have been coated on Nb substrates without any buffer layers. An in situ pulsed laser deposition (PLD) method was used to prepare the coating. The interface between films and substrates has been characterized by scanning electron microscopy (SEM). Surface impedance has been measured for the MgB2 films on Nb substrates. The results were discussed with regard to the potential large scale applications in superconducting RF cavities.

Ex situ and In situ TEM study of the relaxation of thin films by the modified frank-read mechanism

1992 ◽  
Vol 50 (2) ◽  
pp. 1342-1343
Author(s):  
F.K. LeGoues
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
Ex Situ ◽  
In Situ Tem ◽  
Wide Range ◽  
Strong Resemblance ◽  
Image Position

In recent papers, we have described a novel mechanism for strain relaxation of thin films. Because of its strong resemblance to the well known Frank-Read sources of dislocations, it was called the “Modified-Frank-Read” (MFR) mechanism. This process was first observed during the growth of compositionally graded SiGe/Si(001) thin films, where it results in dislocations pile-ups being injected deep into an initially perfect substrate, leaving the topmost part of the film relaxed and nominally defect free. This last observation opens the door to a wide range of electronic applications since it makes it possible to grow electronic grade buffer layers of arbitrary composition and lattice parameter.The exact mechanism of the reproduction of dislocations was identified through tilting experiment and analysis of several compositionally graded SiGe/Si(001) structures. These also provided the important parameters controlling this mode of strain relaxation. We thus demonstrated that the MFR mechanism corresponds to the multiplication of “corner dislocations” (dislocations whose line forms a 90° angle) by simultaneous glide on two (111) planes.

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