Electronic Doping in Epitaxial Pb(Zr0>52Ti0.48)03/SrRuO3 Heterostructures using a Ferroelectric Field Effect

1997 ◽  
Vol 474 ◽  
Author(s):  
C. H. Ahn ◽  
T. Tybell ◽  
L. Antognazza ◽  
K. Char ◽  
M. R. Beasley ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electronic Structures ◽  
Field Effect ◽  
Anomalous Hall Effect ◽  
Resistance Change ◽  
Ultrathin Layers ◽  
Hall Effect Measurements ◽  
Epitaxial Heterostructures ◽  
Electronic Doping

ABSTRACTWe report on ferroelectric field effect experiments in ultrathin layers of the metallic perovskite SrRuC<3 using Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures. Switching the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O3 layer induces a ∼ 10% change in the sheet resistance of the SrRuO3 layer that is nonvolatile and also reversible. Hall effect measurements that take into account the anomalous Hall effect reveal a carrier concentration of n ∼ 2 × 1022 electrons/cm3 and allow us to understand quantitatively the sign and magnitude of the observed resistance change. Of key importance for these experiments is the crystalline and surface quality of the SrRuO3 and Pb(Zr0.52Ti0.48)O3 layers. We also discuss how this general approach of nonvolatile doping using ferroelectrics opens new possibilities of directly creating small electronic structures without using traditional lithographic techniques.

scholarly journals Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085305 ◽  
Author(s):  
Eigo Fujita ◽  
Mitsuru Sometani ◽  
Tetsuo Hatakeyama ◽  
Shinsuke Harada ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Hall Effect Measurements ◽  
Insight Into

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 327-331 ◽  
Author(s):  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Alexei V. Kudrin ◽  
Sergey A. Popkov ◽  
Alexandra P. Detochenko ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Resonance Spectroscopy ◽  
Electron Spin Relaxation ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Hall Effect Measurements

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

scholarly journals Anomalous Hall Effect in Field-Effect Structures of (Ga,Mn)As

2010 ◽  
Vol 104 (10) ◽  
Author(s):  
D. Chiba ◽  
A. Werpachowska ◽  
M. Endo ◽  
Y. Nishitani ◽  
F. Matsukura ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Anomalous Hall Effect

Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films

2006 ◽  
Vol 88 (25) ◽  
pp. 253508 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Yasushi Takamatsu ◽  
Shintaro Nakano ◽  
Takayasu Sakurai ◽  
Takao Someya
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plastic Films ◽  
Hall Effect Measurements

Anomalous Hall effect measurements on capped bit-patterned media

2011 ◽  
Vol 99 (14) ◽  
pp. 142503 ◽  
Author(s):  
M. Ranjbar ◽  
S. N. Piramanayagam ◽  
S. K. Wong ◽  
R. Sbiaa ◽  
T. C. Chong
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Bit Patterned Media ◽  
Patterned Media ◽  
Hall Effect Measurements

Hall Effect and Magnetoresistance in Undoped Poly(3 Hexylthiophene)

1989 ◽  
Vol 173 ◽  
Author(s):  
Azar Assadi ◽  
Christer Svensson ◽  
Magnus Willander
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Hall Mobility ◽  
Field Effect ◽  
Transverse Magnetic ◽  
Field Effect Mobility ◽  
Transverse Magnetoresistance ◽  
Hall Effect Measurements ◽  
Effect Transistor ◽  
Van Der Pauw

ABSTRACTWe report studies of transport properties of thin films of undoped poly(3-hexylthiophene) (P3HT) fabricated by spinning a polymer solution onto oxidised silicon or glass. The film thicknesseswere on the order of 1000 Å. We studied magnetoresistance, the effect of magnetic field on field effect mobility and Hall effect.Transverse magnetoresistance was measured on films on glass. A positive anomalous magnetoresistance with a saturation value of about 0.1 % was found. Transverse magnetoresistance was also studied by measuring the change of a field effect mobility with magnetic field. This measurement was performed using the field effect transistor structure. An initial mobility of 6.5 × 10−5 cm2/Vs was reduced by about 15 % in a transverse magnetic field.We also carried out Hall effect measurements on films on glass using a Van der Pauw contact configuration. The measured Hall mobility was 2.17 × 10−5 cm2/Vs. Finally we measured the temperature dependence of the Hall mobility and found it follow the exp(T-l/4) law of variable range hopping.

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