scholarly journals Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085305 ◽  
Author(s):  
Eigo Fujita ◽  
Mitsuru Sometani ◽  
Tetsuo Hatakeyama ◽  
Shinsuke Harada ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Hall Effect Measurements ◽  
Insight Into

Hall Effect and Magnetoresistance in Undoped Poly(3 Hexylthiophene)

1989 ◽  
Vol 173 ◽  
Author(s):  
Azar Assadi ◽  
Christer Svensson ◽  
Magnus Willander
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Hall Mobility ◽  
Field Effect ◽  
Transverse Magnetic ◽  
Field Effect Mobility ◽  
Transverse Magnetoresistance ◽  
Hall Effect Measurements ◽  
Effect Transistor ◽  
Van Der Pauw

ABSTRACTWe report studies of transport properties of thin films of undoped poly(3-hexylthiophene) (P3HT) fabricated by spinning a polymer solution onto oxidised silicon or glass. The film thicknesseswere on the order of 1000 Å. We studied magnetoresistance, the effect of magnetic field on field effect mobility and Hall effect.Transverse magnetoresistance was measured on films on glass. A positive anomalous magnetoresistance with a saturation value of about 0.1 % was found. Transverse magnetoresistance was also studied by measuring the change of a field effect mobility with magnetic field. This measurement was performed using the field effect transistor structure. An initial mobility of 6.5 × 10−5 cm2/Vs was reduced by about 15 % in a transverse magnetic field.We also carried out Hall effect measurements on films on glass using a Van der Pauw contact configuration. The measured Hall mobility was 2.17 × 10−5 cm2/Vs. Finally we measured the temperature dependence of the Hall mobility and found it follow the exp(T-l/4) law of variable range hopping.

Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

2012 ◽  
Vol 1430 ◽  
Author(s):  
Hiroaki Yamada ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Hall Effect ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hall Effect Measurement ◽  
Field Effect Mobility ◽  
Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films

2006 ◽  
Vol 88 (25) ◽  
pp. 253508 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Yasushi Takamatsu ◽  
Shintaro Nakano ◽  
Takayasu Sakurai ◽  
Takao Someya
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plastic Films ◽  
Hall Effect Measurements

Electronic Doping in Epitaxial Pb(Zr0>52Ti0.48)03/SrRuO3 Heterostructures using a Ferroelectric Field Effect

1997 ◽  
Vol 474 ◽  
Author(s):  
C. H. Ahn ◽  
T. Tybell ◽  
L. Antognazza ◽  
K. Char ◽  
M. R. Beasley ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electronic Structures ◽  
Field Effect ◽  
Anomalous Hall Effect ◽  
Resistance Change ◽  
Ultrathin Layers ◽  
Hall Effect Measurements ◽  
Epitaxial Heterostructures ◽  
Electronic Doping

ABSTRACTWe report on ferroelectric field effect experiments in ultrathin layers of the metallic perovskite SrRuC<3 using Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures. Switching the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O3 layer induces a ∼ 10% change in the sheet resistance of the SrRuO3 layer that is nonvolatile and also reversible. Hall effect measurements that take into account the anomalous Hall effect reveal a carrier concentration of n ∼ 2 × 1022 electrons/cm3 and allow us to understand quantitatively the sign and magnitude of the observed resistance change. Of key importance for these experiments is the crystalline and surface quality of the SrRuO3 and Pb(Zr0.52Ti0.48)O3 layers. We also discuss how this general approach of nonvolatile doping using ferroelectrics opens new possibilities of directly creating small electronic structures without using traditional lithographic techniques.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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