Anomalous Hall effect measurements on capped bit-patterned media

2011 ◽  
Vol 99 (14) ◽  
pp. 142503 ◽  
Author(s):  
M. Ranjbar ◽  
S. N. Piramanayagam ◽  
S. K. Wong ◽  
R. Sbiaa ◽  
T. C. Chong
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Bit Patterned Media ◽  
Patterned Media ◽  
Hall Effect Measurements

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 327-331 ◽  
Author(s):  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Alexei V. Kudrin ◽  
Sergey A. Popkov ◽  
Alexandra P. Detochenko ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Resonance Spectroscopy ◽  
Electron Spin Relaxation ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Hall Effect Measurements

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

Electronic Doping in Epitaxial Pb(Zr0>52Ti0.48)03/SrRuO3 Heterostructures using a Ferroelectric Field Effect

1997 ◽  
Vol 474 ◽  
Author(s):  
C. H. Ahn ◽  
T. Tybell ◽  
L. Antognazza ◽  
K. Char ◽  
M. R. Beasley ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electronic Structures ◽  
Field Effect ◽  
Anomalous Hall Effect ◽  
Resistance Change ◽  
Ultrathin Layers ◽  
Hall Effect Measurements ◽  
Epitaxial Heterostructures ◽  
Electronic Doping

ABSTRACTWe report on ferroelectric field effect experiments in ultrathin layers of the metallic perovskite SrRuC<3 using Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures. Switching the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O3 layer induces a ∼ 10% change in the sheet resistance of the SrRuO3 layer that is nonvolatile and also reversible. Hall effect measurements that take into account the anomalous Hall effect reveal a carrier concentration of n ∼ 2 × 1022 electrons/cm3 and allow us to understand quantitatively the sign and magnitude of the observed resistance change. Of key importance for these experiments is the crystalline and surface quality of the SrRuO3 and Pb(Zr0.52Ti0.48)O3 layers. We also discuss how this general approach of nonvolatile doping using ferroelectrics opens new possibilities of directly creating small electronic structures without using traditional lithographic techniques.

scholarly journals Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge

2016 ◽  
Vol 2 (4) ◽  
pp. e1501870 ◽  
Author(s):  
Ajaya K. Nayak ◽  
Julia Erika Fischer ◽  
Yan Sun ◽  
Binghai Yan ◽  
Julie Karel ◽  
...  
Keyword(s):  
Hall Effect ◽  
Data Storage ◽  
Room Temperature ◽  
Theoretical Calculations ◽  
Anomalous Hall Effect ◽  
Spin Hall Effect ◽  
Storage Devices ◽  
Berry Curvature ◽  
Ferromagnetic Metals ◽  
Hall Effect Measurements

It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)−1 at 2 K and ~50 (ohm·cm)−1 at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)−1, comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect–based data storage devices.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven
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