Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films

2006 ◽  
Vol 88 (25) ◽  
pp. 253508 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Yasushi Takamatsu ◽  
Shintaro Nakano ◽  
Takayasu Sakurai ◽  
Takao Someya
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plastic Films ◽  
Hall Effect Measurements

Hall effect of polycrystalline pentacene field-effect transistors on plastic films

2006 ◽  
Author(s):  
Yasushi Takamatsu ◽  
Tsuyoshi Sekitani ◽  
Shintaro Nakano ◽  
Takayasu Sakurai ◽  
Takao Someya
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plastic Films

scholarly journals Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085305 ◽  
Author(s):  
Eigo Fujita ◽  
Mitsuru Sometani ◽  
Tetsuo Hatakeyama ◽  
Shinsuke Harada ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Hall Effect Measurements ◽  
Insight Into

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

2020 ◽  
Vol 1004 ◽  
pp. 620-626
Author(s):  
Hironori Takeda ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Free Carrier ◽  
Oxide Semiconductor ◽  
Thermal Excitation ◽  
Temperature Dependent ◽  
Conduction Mechanisms ◽  
The Impact

Temperature-dependent Hall effect measurements were conducted to investigate the channel conduction mechanisms of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). This method allows us to discriminate the impact of the density of mobile (free) carriers in the inversion channels and their net mobility on the performance of SiC MOSFETs. It was found that, while the free carrier ratio of SiC MOSFETs with conventional gate oxides formed by dry oxidation is below 4% at 300 K, increasing the free carrier ratio due to thermal excitation of trapped electrons from SiO2/SiC interfaces leads to an unusual improvement in the field-effect mobility of SiC MOSFETs at elevated temperatures. Specifically, a significant increase in free carrier density surpasses the mobility degradation caused by phonon scattering for thermally grown SiO2/SiC interfaces. It was also found that, although nitrogen incorporation in SiO2/SiC interfaces increases the free carrier ratio typically up to around 30%, introduction of an additional scattering factor associated with interface nitridation compensates for the moderate amount of thermally generated mobile carriers at high temperatures, indicating a fundamental drawback of nitridation of SiO2/SiC interfaces. On the basis of these findings, we discuss the channel conduction mechanisms of SiC MOSFETs.

Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

2012 ◽  
Vol 1430 ◽  
Author(s):  
Hiroaki Yamada ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Hall Effect ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hall Effect Measurement ◽  
Field Effect Mobility ◽  
Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

Pentacene field-effect transistors on plastic films operating at high temperature above 100°C

2004 ◽  
Vol 85 (17) ◽  
pp. 3902-3904 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Shingo Iba ◽  
Yusaku Kato ◽  
Takao Someya
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plastic Films

scholarly journals Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Nano Letters ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 6611-6616 ◽  
Author(s):  
Fangyuan Yang ◽  
Zuocheng Zhang ◽  
Nai Zhou Wang ◽  
Guo Jun Ye ◽  
Wenkai Lou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Hall ◽  
Black Phosphorus
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