scholarly journals Nanoindentation Hardness of Soft Films on Hard Substrates: Effects of the Substrate

1997 ◽  
Vol 473 ◽  
Author(s):  
T. Y. Tsui ◽  
C. A. Ross ◽  
G. M. Pharr

ABSTRACTThe ability to accurately measure the mechanical properties of thin metallic films is important in the semiconductor industry as it relates to device reliability issues. One popular technique for measuring thin film mechanical properties is nanoindentation. This technique has the advantage of being able to measure properties such as hardness and elastic modulus without removing a film from its substrate. However, according to a widely-held rule of thumb, intrinsic film properties can be measured in a manner which is not influenced by the substrate only if the indentation depth is kept to less than 10% of the film thickness, which is often not practical. In this work, a method for making substrate independent hardness measurements of soft metallic films on hard substrates is proposed. The primary issue to be addressed is the substrate-induced enhancement of indentation pile-up and the ways in which this pile-up influences the contact area determined from analyses of nanoindentation load-displacement data. Based on experimental observations of soft aluminum films on silicon, glass, and sapphire substrates, a simple empirical relationship is derived which relates the amount of pile-up to the contact depth. From this relationship, a simple method is developed which allows the intrinsic hardness of the film to be measured by nanoindentation methods even when the indenter penetrates through the film into the substrate.

2003 ◽  
Vol 18 (6) ◽  
pp. 1383-1391 ◽  
Author(s):  
Ting Y. Tsui ◽  
C. A. Ross ◽  
G. M. Pharr

A new method for making substrate-independent hardness measurements by nanoindentation techniques that applies to soft metallic films on very hard substrates is presented. The primary issue to be addressed is substrate-induced enhancement of indentation pileup and the ways it influences the indentation contact area. On the basis of experimental observations of soft aluminum films deposited on silicon, glass, and sapphire substrates, an empirical relationship was derived that relates the amount of pileup to the contact depth. From this relationship and the associated experimental observations, a method was developed that allows the intrinsic hardness of the film to be estimated, even when the indenter penetrates through the film into the substrate. The method should prove useful for very thin films (<100 nm) in which it is not possible to make measurements at penetration depths small enough to avoid subtrate effects.


2019 ◽  
Vol 9 (8) ◽  
pp. 1609 ◽  
Author(s):  
A. K. M. Ashiquzzaman Shawon ◽  
Soon-Chul Ur

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.


It is well known that when thin leaves of gold or silver are mounted upon glass and heated to a temperature which is well below a red heat, a remarkable change of properties takes place, whereby the continuity of the metallic film is destroyed. The result is that white light is now freely transmitted, reflection is correspondingly diminished, while the electric resistivity is enormously increased. A simple method of illustrating this extraordinary change is to mount a sheet of silver leaf between two clean lantern plates, clip them lightly together by means of wire paper fasteners or other suitable means, and then heat gradually to a temperature of not more than 500°C. This can be done con­veniently by placing the plates on a thin fire-brick in a cold gas muffle, and then raising the temperature to the desired point. The gas should now be turned off, and the glass plates allowed to cool slowly, so as to avoid cracking. They can then be bound with strips like an ordinary lantern plate, and a permanent example of transparent silver is obtained. It will be found that such a plate transmits the light of the electric lantern almost as readily as ordinary glass, and does not produce any change of colour. The great trans­parency of the film may be shown by placing the plate upon printing or writing, and photographing the characters through the plate. Every detail of the characters can be reproduced with remarkable clearness. At first sight it is perhaps difficult to conceive that so distinct an impression could be obtained through what was originally a perfectly opaque sheet of silver, and which has only been once heated to a moderate temperature.


1991 ◽  
Vol 6 (7) ◽  
pp. 1498-1501 ◽  
Author(s):  
Paul A. Flinn

Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.


Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2111
Author(s):  
Pawan Kumar Tripathi ◽  
Yu-Chen Chiu ◽  
Somnath Bhowmick ◽  
Yu-Chieh Lo

High strength and ductility, often mutually exclusive properties of a structural material, are also responsible for damage tolerance. At low temperatures, due to high surface energy, single element metallic nanowires such as Ag usually transform into a more preferred phase via nucleation and propagation of partial dislocation through the nanowire, enabling superplasticity. In high entropy alloy (HEA) CoNiCrFeMn nanowires, the motion of the partial dislocation is hindered by the friction due to difference in the lattice parameter of the constituent atoms which is responsible for the hardening and lowering the ductility. In this study, we have examined the temperature-dependent superplasticity of single component Ag and multicomponent CoNiCrFeMn HEA nanowires using molecular dynamics simulations. The results demonstrate that Ag nanowires exhibit apparent temperature-dependent superplasticity at cryogenic temperature due to (110) to (100) cross-section reorientation behavior. Interestingly, HEA nanowires can perform exceptional strength-ductility trade-offs at cryogenic temperatures. Even at high temperatures, HEA nanowires can still maintain good flow stress and ductility prior to failure. Mechanical properties of HEA nanowires are better than Ag nanowires due to synergistic interactions of deformation twinning, FCC-HCP phase transformation, and the special reorientation of the cross-section. Further examination reveals that simultaneous activation of twining induced plasticity and transformation induced plasticity are responsible for the plasticity at different stages and temperatures. These findings could be very useful for designing nanowires at different temperatures with high stability and superior mechanical properties in the semiconductor industry.


Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 476 ◽  
Author(s):  
Yi-En Ke ◽  
Yung-I Chen

ZrNx (x = 0.67–1.38) films were fabricated through direct current magnetron sputtering by a varying nitrogen flow ratio [N2/(Ar + N2)] ranging from 0.4 to 1.0. The structural variation, bonding characteristics, and mechanical properties of the ZrNx films were investigated. The results indicated that the structure of the films prepared using a nitrogen flow ratio of 0.4 exhibited a crystalline cubic ZrN phase. The phase gradually changed to a mixture of crystalline ZrN and orthorhombic Zr3N4 followed by a Zr3N4 dominant phase as the N2 flow ratio increased up to >0.5 and >0.85, respectively. The bonding characteristics of the ZrNx films comprising Zr–N bonds of ZrN and Zr3N4 compounds were examined by X-ray photoelectron spectroscopy and were well correlated with the structural variation. With the formation of orthorhombic Zr3N4, the nanoindentation hardness and Young’s modulus levels of the ZrNx (x = 0.92–1.38) films exhibited insignificant variations ranging from 18.3 to 19.0 GPa and from 210 to 234 GPa, respectively.


2010 ◽  
Vol 25 (5) ◽  
pp. 880-889 ◽  
Author(s):  
Zhi-Hui Xu ◽  
Young-Bae Park ◽  
Xiaodong Li

Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.


Author(s):  
Xiangyang Zhou ◽  
Zhuangde Jiang ◽  
Hairong Wang

The purpose of this paper is to find a reliable method for determining the hardnesses of soft metallic thin films on hard substrates. Based on the nanoindention experimental data for a 504 nm Au thin film deposited on glass substrate system, several possible methods are applied and the results come from them are compared. The results reveal that the Oliver-Pharr method is strongly influenced by the material pile-up behavior and substrate effect that leads to an erroneously overestimated hardness. However, the methods based on traditional area calculations by SEM image, work of indentation principles during the indentation cycle and constant modulus assumption calculations all can effectively avoid the effect of pile-up and minimize that of substrate. Among three, the results from indentation method are obviously much higher than those from other two. Hence we argue that the results by SEM image method and constant modulus assumption calculations are more reasonable.


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