Electrical Defects of Shallow (P+/N) Junctions Formed by Boron Implantation into Ge-Preamorphized Si-Substrates

1997 ◽  
Vol 469 ◽  
Author(s):  
D. Alquier ◽  
M. Benzohra ◽  
F. Boussaid ◽  
F. Olivie ◽  
A. Martinez
Keyword(s):  
Deep Level ◽  
Electrical Measurements ◽  
Implantation Energy ◽  
Dopant Activation ◽  
Si Substrates ◽  
Current Voltage ◽  
Boron Implantation ◽  
Carrier Traps ◽  
Judicious Choice ◽  
Transient Spectroscopy

ABSTRACTIn this paper, we report Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements on ultra-shallow (p+/n) junctions obtained by boron implantation into crystalline and Ge preamorphized Si-substrates. Germanium implantations were carried out at the energies of 30, 60 and 150 keV at a dose of 1015 cm−2. Boron was then implanted at an energy of 3 keV at a dose of 1015 cm−2. Dopant activation was obtained by Rapid Thermal Annealing (RTA) performed at 950°C for 15s in a nitrogen ambient. The aim of this work is to study the relation that exists between a population of End-Of-Range (EOR) defects, measured by TEM, and electrical properties of the Ge preamorphized diodes. The electrical measurements allow us to give the conduction mechanism which dominates in the diodes. Moreover, DLTS measurements showed the presence of two majority-carrier traps in direct relation with the EOR defects, measured at Ec-0,22eV and Ec-0,47eV. The presence of energy-distributed G-R centers independent upon the preamorphization stage is also discussed. Nevertheless, high quality (p+/n) junctions can be obtained by this technology with a judicious choice of Ge implantation energy.

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

2001 ◽  
Vol 692 ◽  
Author(s):  
Daniel K. Johnstonea ◽  
Mohamed Ahoujjab ◽  
Yung Kee Yeoc ◽  
Robert L. Hengeholdc ◽  
Louis Guidod
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Energy Concentration ◽  
Organic Chemical ◽  
High Concentration ◽  
Current Voltage ◽  
Carrier Traps ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractGaN and its related alloys are being widely developed for blue-ultraviolet emitting and detection devices as well as high temperature, high power, and high frequency electronics. Despite the fast improvement in the growth of good quality GaN, a high concentration of deep level defects of yet unconfirmed origins are still found in GaN. For both optical and electronic devices, these deep carrier traps and/or recombination centers are very important and must therefore be understood. In the present work, deep level defects in GaN grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) have been investigated using Isothermal Capacitance Transient Spectroscopy (ICTS) and Current Voltage Temperature (IVT) measurements. Several deep level electron traps were characterized, obtaining the emission energy, concentration, and capture cross section from a fit of exponentials to the capacitance transients. ICTS was also used to reveal information about the capture kinetics involved in the traps found in GaN by measuring the amplitude of the capacitance transient at each temperature. At a reduced filling pulse where the traps were not saturated, several of them showed marked reduction in capacitance transient amplitude when compared to the transient amplitude measured under conditions where the filling pulse saturates the traps. This reduction in transient amplitude indicates that there is a barrier to carrier capture, in addition to the emission barrier. It has been found that several traps had capture barriers that were significant fractions of the emission energies up to 0.32 eV. These capture barriers may lead to persistent photoconductivity and reduced trapping. In this paper, deep level emission energies as well as capture barrier energies found in MOCVD-grown GAN will be discussed.

Electrical Properties of Mesa Diodes on Epitaxial GaAs/Si

1989 ◽  
Vol 160 ◽  
Author(s):  
K.L. Jiao ◽  
A.J. Soltyka ◽  
W.A. Anderson ◽  
S.M. Vernon
Keyword(s):  
Electrical Properties ◽  
Deep Level ◽  
Continuous Distribution ◽  
Saturation Current ◽  
Tunneling Model ◽  
Si Substrates ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Transient Spectroscopy ◽  
Density Barrier

AbstractDeep level transient spectroscopy (DLTS), current-voltage- temperature (I-V-T), capacitance-voltage-temperature (C-V-T), C-T and photoreflectance spectroscopy (PRS) were used to compare the electrical properties of GaAs p-n junctions epitaxially grown by MOCVD on GaAs and Si substrates. EL2 was detected for both GaAs/GaAs and GaAs/Si structures. For GaAs/Si, a continuous distribution of trap levels was also observed which could be ascribed to misfit defects. I-V-T data revealed the saturation current of GaAs/Si diodes to be four orders in amplitude higher than for GaAs/GaAs ones. Different temperature dependences were found in saturation current density, barrier height and capacitance between the two structures. A multistep tunneling model is utilized in explaining the results for GaAs/Si. C-T measurements indicated the free carriers not to be frozen-out for GaAs/Si at the freeze-out temperature of GaAs/GaAs. A defect- induced bandgap tailing effect might be responsible for this effect, verified by PRS tests.

Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces

2014 ◽  
Vol 1699 ◽  
Author(s):  
Per Lindberg ◽  
Vincent Quemener ◽  
Kristin Bergum ◽  
Jiantuo Gan ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Deep Level ◽  
Atomic Layer ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Post Deposition

ABSTRACTAluminum doped ZnO (AZO) has been deposited on (100), (110) and (111) oriented n-type Si and on fused silica by atomic layer deposition (ALD). The films have been post deposition annealed in the temperature range 200-500 οC. The AZO films have been characterized by X-ray diffraction (XRD), Hall and transmittance measurements. Circular diodes have been fabricated from the AZO/Si structures and characterized by current-voltage (IV) and deep level transient spectroscopy (DLTS). The AZO films form Schottky junctions with the Si substrates for all the crystallographic orientations. It is established that after post deposition annealing the structure AZO/n-Si (110) is distinguished as the system with largest rectification.

Degradation and Recovery of Boron Doped Strained Silicon Germanium Layers After 1-MeV Electron Irradiation

1992 ◽  
Vol 281 ◽  
Author(s):  
H. Ohyama ◽  
J. Vanhellemont ◽  
M.-A. Trauwaert ◽  
J. Poortmans ◽  
M. Caymax ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Silicon Germanium ◽  
Deep Level ◽  
Recovery Process ◽  
Si Substrates ◽  
Boron Doped ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACT1007×100 μm2 n+− Si/p-Si1−x Gex diodes fabricated on conventional p-type Si substrates are irradiated at room temperature with 1-MeV electrons with fluences from 1.0×1014 to 1.0×1015 e/cm2 in a high voltage transmission electron microscope. The boron concentration and germanium fraction of the Si1−x Gex epitaxial layer used for the diodes in this study are 5×1017 cm−3 and x = 0.12, respectively. The degradation of diodes is investigated by means of current/voltage and capacitance/voltage measurements. The characteristics of the electrically active defects induced in the Si1−x Gex epitaxial layer by irradiation are also examined by using deep level transient spectroscopy and capacitance/temperature measurements. The degradation of the diode performance and the presence of deep levels are investigated as a function of electron fluence. In order to examine the recovery process, an isochronal thermal anneal is performed in the temperature range between 100 and 400°C.

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes

2009 ◽  
Vol 615-617 ◽  
pp. 469-472
Author(s):  
Filippo Fabbri ◽  
Francesco Moscatelli ◽  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Anna Cavallini
Keyword(s):  
Depth Distribution ◽  
Minority Carrier ◽  
Deep Level ◽  
Forward Bias ◽  
Depth Range ◽  
Standard Configuration ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Graded Junction ◽  
Dlts Spectra

Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present C-V characteristics like graded junction for low forward bias values, i.e. > 0.4 V , or like abrupt junctions for large reverse bias, i.e. between 0.4V and -10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by C-V analysis.

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