Electrical Properties of Mesa Diodes on Epitaxial GaAs/Si

1989 ◽  
Vol 160 ◽  
Author(s):  
K.L. Jiao ◽  
A.J. Soltyka ◽  
W.A. Anderson ◽  
S.M. Vernon
Keyword(s):  
Electrical Properties ◽  
Deep Level ◽  
Continuous Distribution ◽  
Saturation Current ◽  
Tunneling Model ◽  
Si Substrates ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Transient Spectroscopy ◽  
Density Barrier

AbstractDeep level transient spectroscopy (DLTS), current-voltage- temperature (I-V-T), capacitance-voltage-temperature (C-V-T), C-T and photoreflectance spectroscopy (PRS) were used to compare the electrical properties of GaAs p-n junctions epitaxially grown by MOCVD on GaAs and Si substrates. EL2 was detected for both GaAs/GaAs and GaAs/Si structures. For GaAs/Si, a continuous distribution of trap levels was also observed which could be ascribed to misfit defects. I-V-T data revealed the saturation current of GaAs/Si diodes to be four orders in amplitude higher than for GaAs/GaAs ones. Different temperature dependences were found in saturation current density, barrier height and capacitance between the two structures. A multistep tunneling model is utilized in explaining the results for GaAs/Si. C-T measurements indicated the free carriers not to be frozen-out for GaAs/Si at the freeze-out temperature of GaAs/GaAs. A defect- induced bandgap tailing effect might be responsible for this effect, verified by PRS tests.

Electrical Defects of Shallow (P+/N) Junctions Formed by Boron Implantation into Ge-Preamorphized Si-Substrates

1997 ◽  
Vol 469 ◽  
Author(s):  
D. Alquier ◽  
M. Benzohra ◽  
F. Boussaid ◽  
F. Olivie ◽  
A. Martinez
Keyword(s):  
Deep Level ◽  
Electrical Measurements ◽  
Implantation Energy ◽  
Dopant Activation ◽  
Si Substrates ◽  
Current Voltage ◽  
Boron Implantation ◽  
Carrier Traps ◽  
Judicious Choice ◽  
Transient Spectroscopy

ABSTRACTIn this paper, we report Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements on ultra-shallow (p+/n) junctions obtained by boron implantation into crystalline and Ge preamorphized Si-substrates. Germanium implantations were carried out at the energies of 30, 60 and 150 keV at a dose of 1015 cm−2. Boron was then implanted at an energy of 3 keV at a dose of 1015 cm−2. Dopant activation was obtained by Rapid Thermal Annealing (RTA) performed at 950°C for 15s in a nitrogen ambient. The aim of this work is to study the relation that exists between a population of End-Of-Range (EOR) defects, measured by TEM, and electrical properties of the Ge preamorphized diodes. The electrical measurements allow us to give the conduction mechanism which dominates in the diodes. Moreover, DLTS measurements showed the presence of two majority-carrier traps in direct relation with the EOR defects, measured at Ec-0,22eV and Ec-0,47eV. The presence of energy-distributed G-R centers independent upon the preamorphization stage is also discussed. Nevertheless, high quality (p+/n) junctions can be obtained by this technology with a judicious choice of Ge implantation energy.

Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

1995 ◽  
Vol 411 ◽  
Author(s):  
T. D. Chen ◽  
J.-R. Lee ◽  
H. L. Tuller ◽  
Y.-M. Chiang
Keyword(s):  
Heat Treatment ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Leakage ◽  
Current Voltage ◽  
Transient Spectroscopy

ABSTRACTSimplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

1MeV electron irradiation effects of GaAs/Si solar cells

2004 ◽  
Vol 836 ◽  
Author(s):  
N. Chandrasekaran ◽  
T. Soga ◽  
Y. Inuzuka ◽  
M. Imaizumi ◽  
H. Taguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level ◽  
Short Circuit ◽  
Saturation Current ◽  
High Radiation ◽  
Si Substrates ◽  
Si Solar Cell ◽  
Related Defect ◽  
Transient Spectroscopy ◽  
Short Circuit Currents

ABSTRACTThe characteristics of 1 MeV electron irradiated GaAs solar cells grown on GaAs and Si substrates are studied under dark and AM 0 conditions. The short circuit currents (Isc) for GaAs/GaAs cell and GaAs/Si cell have been decreased at higher fluences. The degradation rate of Voc and Pmax for GaAs/Si is slower than that of GaAs/GaAs at the fluence 1×1016 cm−2. This is due to the high radiation resistance of saturation current. It has been due to slow generation of arsnic vacancies related defect (VAs) in the GaAs/Si solar cell, which is determined by photoluminescence analyses and deep level transient spectroscopy.

Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces

2014 ◽  
Vol 1699 ◽  
Author(s):  
Per Lindberg ◽  
Vincent Quemener ◽  
Kristin Bergum ◽  
Jiantuo Gan ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Deep Level ◽  
Atomic Layer ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Post Deposition

ABSTRACTAluminum doped ZnO (AZO) has been deposited on (100), (110) and (111) oriented n-type Si and on fused silica by atomic layer deposition (ALD). The films have been post deposition annealed in the temperature range 200-500 οC. The AZO films have been characterized by X-ray diffraction (XRD), Hall and transmittance measurements. Circular diodes have been fabricated from the AZO/Si structures and characterized by current-voltage (IV) and deep level transient spectroscopy (DLTS). The AZO films form Schottky junctions with the Si substrates for all the crystallographic orientations. It is established that after post deposition annealing the structure AZO/n-Si (110) is distinguished as the system with largest rectification.

Electrical Properties of Thin Nitrogen-Doped Ultrananocrystalline Diamond Films

2002 ◽  
Vol 737 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnikov ◽  
S.M. Pimenov ◽  
J.A. Carlisle ◽  
D.M. Gruen
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Microwave Plasma ◽  
Deep Level ◽  
Nitrogen Concentration ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond ◽  
Microwave Plasma Cvd ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of ultrananocrystalline diamond (UNCD) films of approximately 1μm thickness were studied. UNCD films were deposited on p-type Si substrates from CH4/Ar/N2 gas mixtures using microwave plasma CVD techniques. It was found that the UNCD films with higher nitrogen concentration and higher electron conductivity have substantially higher concentration of shallow levels with activation energy of about 0.05 eV. The change of concentration, activation energy and capture cross-section of nitrogen-induced levels for UNCD films synthesized using different nitrogen concentration in the plasma was studied by charge– based deep level transient spectroscopy.

Degradation and Recovery of Boron Doped Strained Silicon Germanium Layers After 1-MeV Electron Irradiation

1992 ◽  
Vol 281 ◽  
Author(s):  
H. Ohyama ◽  
J. Vanhellemont ◽  
M.-A. Trauwaert ◽  
J. Poortmans ◽  
M. Caymax ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Silicon Germanium ◽  
Deep Level ◽  
Recovery Process ◽  
Si Substrates ◽  
Boron Doped ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACT1007×100 μm2 n+− Si/p-Si1−x Gex diodes fabricated on conventional p-type Si substrates are irradiated at room temperature with 1-MeV electrons with fluences from 1.0×1014 to 1.0×1015 e/cm2 in a high voltage transmission electron microscope. The boron concentration and germanium fraction of the Si1−x Gex epitaxial layer used for the diodes in this study are 5×1017 cm−3 and x = 0.12, respectively. The degradation of diodes is investigated by means of current/voltage and capacitance/voltage measurements. The characteristics of the electrically active defects induced in the Si1−x Gex epitaxial layer by irradiation are also examined by using deep level transient spectroscopy and capacitance/temperature measurements. The degradation of the diode performance and the presence of deep levels are investigated as a function of electron fluence. In order to examine the recovery process, an isochronal thermal anneal is performed in the temperature range between 100 and 400°C.

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

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