scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects

2007 ◽  
Vol 1035 ◽  
Author(s):  
Qilin Gu ◽  
Xuemin Dai ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Liwu Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Evolution ◽  
Deep Level ◽  
Schottky Diodes ◽  
Control Sample ◽  
Electrical Characterization ◽  
Type Layer ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 1013, 1014 and 1015 cm−2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes as well as ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful DLTS spectra. Moreover, low-temperature photoluminescence experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed.

Electrical Characterization Of Nitrogen Acceptors In p-ZnSe/p-GaAs Grown By Molecular Beam Epitaxy

1996 ◽  
Vol 442 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Energy Levels ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Growth Conditions ◽  
Current Voltage ◽  
Major Interest ◽  
Transient Spectroscopy

AbstractUsing current-voltage measurements, deep-level transient spectroscopy and admittance spectroscopy we investigated nitrogen doped ZnSe grown on p-GaAs substrates by molecular beam epitaxy. Three major hole traps were observed with energy levels at 0. 11, 0.46, and 0.56 eV from the valence band. We attribute the level at 0.11 eV to a nitrogen acceptor. No other direct observations of this important acceptor level in p-ZnSe have been reported in the literature so far. The two remaining levels may originate from the nitrogen doping process. In addition, reverse current-voltage characteristics of the ZnSe/GaAs heterojunction show a hysteresis at low temperature and a soft saturation. At a constant reverse bias the current increases slowly until it reaches a steady state value. This behavior is attributed to a slow voltage-induced barrier lowering due to the presence of mismatch interface states. Therefore, these analyses are of a major interest for applications of ZnSe/GaAs based devices and illustrates the necessity of improving the growth conditions of such structures.

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Damage Related Defect Levels in Oxygen Implanted GaAs and InP

1991 ◽  
Vol 240 ◽  
Author(s):  
L. He ◽  
W. A. Anderson
Keyword(s):  
Deep Level ◽  
High Resistivity ◽  
Oxygen Ion ◽  
Current Voltage ◽  
Surface Disturbance ◽  
Different Temperatures ◽  
Related Defect ◽  
Transient Spectroscopy ◽  
Comparison Of The Results ◽  
Substrate Doping

ABSTRACTOxygen ion-implantation can be used to create high resistivity regions in GaAs and InP. We have studied the low dose oxygen implantation in GaAs and InP by photoreflectance spectroscopy (PR), deep level transient spectroscopy (DLTS) and current-voltage (I-V) characteristics. Rapid thermal annealing (RTA) treatments were carried out at different temperatures after implantation to study the annealing temperature effect. The surface disturbance by implantation was studied by PR. Free carrier compensation was observed in every implanted sample and gave improved I-V properties. By DLTS tests, one electron trap with Ea = Ec-0.15eV and a hole trap with Ea = Ev + 0.76eV in the starting GaAs wafer disappeared after O+ implantation due to carrier compensation. In undoped InP, three new electron traps with Ea = Ec-0.47eV, 0.28eV and O.lleV were created after O+ implantation which are believed to be damage related. The comparison of the results from undoped and n-type doped InP indicated that the carrier compensation effect is substrate doping dependent.

Defects in High Energy Ion Irradiated 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 397-400 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Andrea Severino ◽  
Gaetano Foti ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
High Energy ◽  
Conduction Band Edge ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Fluence Range

The defects produced by 7.0 MeV C+ irradiation in 4H-SiC epitaxial layer were followed by Deep Level Transient Spectroscopy, current-voltage measurements and Transmission Electron Microscopy in a large fluence range (109-51013 ions/cm2). At low fluence (109 -1010 ions/cm2), the formation of three main level defects located at 0.68 eV, 0.98 eV and 1.4 eV below the conduction band edge is detected. The trap concentration increases with ion fluence suggesting that these levels are associated to the point defects generated by ion irradiation. In this fluence range the leakage current of the diodes does not change. At higher fluence an evolution of defects occurs, as the concentration of traps at 0.68 eV and 1.4 eV decreases, while the intensity of the level at 0.98 eV remains constant. In this fluence range complex defects are formed and an increase of a factor five in the leakage current is measured.

Oxide Degradation Resulting from Photoresist Ashing

1993 ◽  
Vol 309 ◽  
Author(s):  
P. I. Mikulan ◽  
T. T. Koo ◽  
O. O. Awadelkarim ◽  
S. J. Fonash ◽  
T. Ta ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Deep Level ◽  
Electrical Characterization ◽  
Si Substrate ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Degradation ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Mos Structures

AbstractIn this study, possible SiO2 damage that could result from several different photoresist ashing techniques has been assessed using patterned photoresist over blanket oxides. The types of ashing systems used were RF power (RF), upstream ozone generator (Upstream) and two microwave power reactors (Microwave 1 and Microwave 2). Aluminum capacitors were evaporated on the samples after the ashing for oxide evaluation. Electrical characterization of these MOS structures included capacitance verses voltage and time dependent dielectric breakdown measurements. We also looked for Si substrate damage in these samples using deep level transient spectroscopy and Schottky barrier current-voltage measurements. This characterization showed oxide damage varied widely with ashing tool. In all cases, however, there was no significant Si substrate damage.

Ion Species Dependence of Electrical Characteristics in Ion Implanted GaAs

1992 ◽  
Vol 279 ◽  
Author(s):  
L. He ◽  
W. A. Anderson
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Surface Damage ◽  
Electrical Performance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTFluorine, boron and oxygen implantation in GaAs has been investigated by electrical characterization using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Ion implantation at lOOkeV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation conditions and ion species. Severe surface damage was also induced which degrades electrical performance. Rapid thermal annealing (RTA) treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

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