Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces

2014 ◽  
Vol 1699 ◽  
Author(s):  
Per Lindberg ◽  
Vincent Quemener ◽  
Kristin Bergum ◽  
Jiantuo Gan ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Deep Level ◽  
Atomic Layer ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Post Deposition

ABSTRACTAluminum doped ZnO (AZO) has been deposited on (100), (110) and (111) oriented n-type Si and on fused silica by atomic layer deposition (ALD). The films have been post deposition annealed in the temperature range 200-500 οC. The AZO films have been characterized by X-ray diffraction (XRD), Hall and transmittance measurements. Circular diodes have been fabricated from the AZO/Si structures and characterized by current-voltage (IV) and deep level transient spectroscopy (DLTS). The AZO films form Schottky junctions with the Si substrates for all the crystallographic orientations. It is established that after post deposition annealing the structure AZO/n-Si (110) is distinguished as the system with largest rectification.

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

2011 ◽  
Vol 178-179 ◽  
pp. 130-135 ◽  
Author(s):  
Vincent Quemener ◽  
Mari Alnes ◽  
Lasse Vines ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Deep Level ◽  
Atomic Layer ◽  
Substantial Improvement ◽  
Conduction Band Edge ◽  
Energy Position ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep level transient spectroscopy (DLTS) measurements. DLTS measurements show two dominants electron traps at the interface of the ZnO/n-Si junction with energy position at 0.07 eV and 0.15 eV below the conduction band edge, labelled E(0.07) and E(0.15), respectively, and no electrically active defects at the interface of the ZnO/p-Si junction. E(0.07) is reduced by annealing up to 400°C while E(0.15) is created at 500°C. The best heterostructure is found after heat treatment at 400°C with a substantial improvement of the current rectification for ZnO/n-Si and the formation of Ohmic contact on ZnO/p-Si. A reduction of the interface defects correlates with an improvement of the crystal structure of the ZnO film with a preferred orientation along the c-axis.

Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

2007 ◽  
Vol 990 ◽  
Author(s):  
Sung-Hoon Chung ◽  
Vladislav Vasilyev ◽  
Evgeni Gorokhov ◽  
Yong-Won Song ◽  
Hyuk-Kyoo Jang
Keyword(s):  
Liquid Phase ◽  
Atomic Layer Deposition ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Structural And Electrical Properties

ABSTRACTWe investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

Ex-situ X-ray diffraction analysis of electrode strain at TiO2 atomic layer deposition/α-MoO3 interface in a novel aqueous potassium ion battery

2016 ◽  
Vol 316 ◽  
pp. 160-169 ◽  
Author(s):  
Nicholas David Schuppert ◽  
Santanu Mukherjee ◽  
Alex M. Bates ◽  
Eun-Jin Son ◽  
Moon Jong Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffraction Analysis ◽  
Atomic Layer ◽  
Potassium Ion ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

scholarly journals Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2857
Author(s):  
Steponas Ašmontas ◽  
Maksimas Anbinderis ◽  
Jonas Gradauskas ◽  
Remigijus Juškėnas ◽  
Konstantinas Leinartas ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Tandem Solar Cells ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Niobium Doped ◽  
Specific Contact ◽  
Carrier Tunneling ◽  
P Type ◽  
Deposited Films

Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

scholarly journals Structure-Dependent Mechanical Properties of ALD-Grown Nanocrystalline BiFeO3Multiferroics

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Anna Majtyka ◽  
Anna Nowak ◽  
Benoît Marchand ◽  
Dariusz Chrobak ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Photoelectron Spectroscopy ◽  
Present Report ◽  
Structural Evolution ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Pertinent Information

The present paper pertains to mechanical properties and structure of nanocrystalline multiferroic BeFiO3(BFO) thin films, grown by atomic layer deposition (ALD) on the Si/SiO2/Pt substrate. The usage of sharp-tip-nanoindentation and multiple techniques of structure examination, namely, grazing incidence X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and energy dispersive X-ray spectrometry, enabled us to detect changes in elastic properties(95 GPa≤E≤118 GPa)and hardness(4.50 GPa≤H≤7.96 GPa)of BFO after stages of annealing and observe their relation to the material’s structural evolution. Our experiments point towards an increase in structural homogeneity of the samples annealed for a longer time. To our best knowledge, the present report constitutes the first disclosure of nanoindentation mechanical characteristics of ALD-fabricated BeFiO3, providing a new insight into the phenomena that accompany structure formation and development of nanocrystalline multiferroics. We believe that our systematic characterization of the BFO layers carried out at consecutive stages of their deposition provides pertinent information which is needed to control and optimize its ALD fabrication.

Residual Stresses in Sputtered ZnO Films on (100) Si Substrates by XRD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Florine Conchon ◽  
Pierre-Olivier Renault ◽  
Philippe Goudeau ◽  
Eric Le Bourhis ◽  
Elin Sondergard ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Annealing Temperature ◽  
Protective Coatings ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Thermally Activated ◽  
Post Deposition

AbstractResidual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.

X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

2007 ◽  
Vol 22 (5) ◽  
pp. 1214-1218 ◽  
Author(s):  
Hong-Liang Lu ◽  
Min Xu ◽  
Shi-Jin Ding ◽  
Wei Chen ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Si Substrate ◽  
Interfacial Film ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Plasma Pretreatment

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al2O3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH3-plasma-nitrided surfaces. Al2O3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiOxNy inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.

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