Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation

1997 ◽  
Vol 469 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Carbon Incorporation ◽  
Carbon Fractions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Heavily Doped

ABSTRACTIn this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

1997 ◽  
Vol 70 (23) ◽  
pp. 3125-3127 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Incorporation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation

1998 ◽  
Vol 527 ◽  
Author(s):  
M. S. Carroll ◽  
L. D. Lanzerotti ◽  
J. C. Sturm
Keyword(s):  
Quantitative Measurement ◽  
Device Modeling ◽  
Electrical Characteristics ◽  
Boron Diffusion ◽  
Carbon Incorporation ◽  
Combined Process ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transient Enhanced Diffusion ◽  
Boron Diffusivity

ABSTRACTRecently, the suppression of boron diffusion due to both thermal and transient enhanced diffusion (TED) has been demonstrated through the incorporation of 0.5% substitutional carbon in the base of Si/SiGe/Si heterojunction transistor's (HBT)[1,2]. Because the devices are sensitive to diffusion on a scale less than that we can detect with SIMS, in this paper combined process and device modeling (TMA TSUPREM4 and MEDICI) are used to relate observed electrical characteristics (collector saturation currents and Early voltages) of the HBT's to boron diffusion, with a sensitivity of 20-30Å. Boron diffusivity in the SiGeC base is ~8 times slower than that of the boron diffusivity in the SiGe base without implant damage (no TED). In the case of ion implant damage in an overlying layer to cause TED the excess interstitial concentration due to ion implant damage is reduced by approximately 99% through incorporation of 0.5% substitutional carbon in the HBT SiGe bases. This demonstrates that carbon incorporation acts as an effective sink for interstitials.

Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base

2001 ◽  
Vol 40 (Part 1, No. 9A) ◽  
pp. 5221-5226 ◽  
Author(s):  
Tohru Oka ◽  
Kiyoshi Ouchi ◽  
Kazuhiro Mochizuki
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Heavily Doped

The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86 Ge0.14

2004 ◽  
Vol 810 ◽  
Author(s):  
Huda A. W. A. El Mubarek ◽  
Yun Wang ◽  
Janet M. Bonar ◽  
Peter Hemment ◽  
Peter Ashburn
Keyword(s):  
Thermal Diffusion ◽  
Sige Layer ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Rich Region ◽  
Implantation Energy ◽  
Enhanced Diffusion ◽  
Partial Relaxation ◽  
Transient Enhanced Diffusion ◽  
Marker Layer

ABSTRACTThis paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

Technology and First Electrical Characteristics of Complementary NPN and PNP InAlAs/InGaAs Heterojunction Bipolar Transistors

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1124-1130 ◽  
Author(s):  
Delong Cui ◽  
Dimitris Pavlidis ◽  
Donald Sawdai ◽  
Patrick Chin ◽  
Tom Block
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electrical Characteristics

Electron mobility enhancement in heavily doped GaAs:C heterojunction bipolar transistors

1996 ◽  
Vol 32 (25) ◽  
pp. 2351 ◽  
Author(s):  
B.C. Lye ◽  
H.K. Yow ◽  
P.A. Houston ◽  
C.C. Button
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Electron Mobility ◽  
Bipolar Transistors ◽  
Heavily Doped
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