Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

1997 ◽  
Vol 70 (23) ◽  
pp. 3125-3127 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Incorporation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation

1997 ◽  
Vol 469 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Carbon Incorporation ◽  
Carbon Fractions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Heavily Doped

ABSTRACTIn this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

2003 ◽  
Vol 83 (20) ◽  
pp. 4169-4171 ◽  
Author(s):  
Chung Foong Tan ◽  
Eng Fong Chor ◽  
Jinping Liu ◽  
Hyeokjae Lee ◽  
Elgin Quek ◽  
...  
Keyword(s):  
Carbon Incorporation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation

1998 ◽  
Vol 527 ◽  
Author(s):  
M. S. Carroll ◽  
L. D. Lanzerotti ◽  
J. C. Sturm
Keyword(s):  
Quantitative Measurement ◽  
Device Modeling ◽  
Electrical Characteristics ◽  
Boron Diffusion ◽  
Carbon Incorporation ◽  
Combined Process ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transient Enhanced Diffusion ◽  
Boron Diffusivity

ABSTRACTRecently, the suppression of boron diffusion due to both thermal and transient enhanced diffusion (TED) has been demonstrated through the incorporation of 0.5% substitutional carbon in the base of Si/SiGe/Si heterojunction transistor's (HBT)[1,2]. Because the devices are sensitive to diffusion on a scale less than that we can detect with SIMS, in this paper combined process and device modeling (TMA TSUPREM4 and MEDICI) are used to relate observed electrical characteristics (collector saturation currents and Early voltages) of the HBT's to boron diffusion, with a sensitivity of 20-30Å. Boron diffusivity in the SiGeC base is ~8 times slower than that of the boron diffusivity in the SiGe base without implant damage (no TED). In the case of ion implant damage in an overlying layer to cause TED the excess interstitial concentration due to ion implant damage is reduced by approximately 99% through incorporation of 0.5% substitutional carbon in the HBT SiGe bases. This demonstrates that carbon incorporation acts as an effective sink for interstitials.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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