Controlling transient enhanced diffusion effects in high-frequency Si[sub 0.7]Ge[sub 0.3], heterojunction bipolar transistors with implanted emitters

1998 ◽  
Vol 16 (3) ◽  
pp. 1533 ◽  
Author(s):  
L. K. Nanver
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects

Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation

1997 ◽  
Vol 469 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Carbon Incorporation ◽  
Carbon Fractions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Heavily Doped

ABSTRACTIn this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

1997 ◽  
Vol 70 (23) ◽  
pp. 3125-3127 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Incorporation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

SiGe Heteroepitaxy for High Frequency Circuits

1998 ◽  
Vol 525 ◽  
Author(s):  
B. Tillack ◽  
D. Bolze ◽  
G. Fischer ◽  
G. Kissinger ◽  
D. Knoll ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Defect Density ◽  
Process Capability ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Capability Indices ◽  
Data Points ◽  
B Doping ◽  
The Stability

ABSTRACTWe have determined the process capability of Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD) of epitaxial Si/SiGe/Si stacks for heterojunction bipolar transistors (HIBTs). The transistor parameters primarily influenced by the epitaxial characteristics were measured for 600 identically processed 4” wafers. The results demonstrate that it is possible to control accurately the epitaxial process for a 25 nm thick graded SiGe base profile with 20 % Ge and very narrow B doping (5 nm). The pipe limited device yield of about 90 % for an emitter area of 104 μm2 indicates a very low defect density in the epitaxial layer stack. The process capability indices determined from about 40,000 data points demonstrate the stability and capability of the LP(RT)CVD epitaxy with regard to manufacturing requirements.

High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

2003 ◽  
Author(s):  
T.I. Kamins ◽  
K. Nauka ◽  
L.H. Camnitz ◽  
J.B. Kruger ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors

Growth of High Frequency SiGe Heterojunction Bipolar Transistors Structures

2002 ◽  
Vol T101 (1) ◽  
pp. 45 ◽  
Author(s):  
H. H. Radamson ◽  
B. Mohadjeri ◽  
C. Menon ◽  
A. Bentzen ◽  
J. Grahn ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

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