Electron mobility enhancement in heavily doped GaAs:C heterojunction bipolar transistors

1996 ◽  
Vol 32 (25) ◽  
pp. 2351 ◽  
Author(s):  
B.C. Lye ◽  
H.K. Yow ◽  
P.A. Houston ◽  
C.C. Button
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Electron Mobility ◽  
Bipolar Transistors ◽  
Heavily Doped

Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base

2001 ◽  
Vol 40 (Part 1, No. 9A) ◽  
pp. 5221-5226 ◽  
Author(s):  
Tohru Oka ◽  
Kiyoshi Ouchi ◽  
Kazuhiro Mochizuki
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Heavily Doped

Study of The Transversal Electron Mobility in Heterojunction Bipolar Transistors with Strained SI1−x Gex-Base

1992 ◽  
Vol 281 ◽  
Author(s):  
J. Poortmans ◽  
M. Caymax ◽  
A. Van Ammel ◽  
M. Libezny ◽  
J. Nijs
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Electron Mobility ◽  
Doping Level ◽  
Theoretical Calculations ◽  
Bipolar Transistors ◽  
Effective Density ◽  
Collector Current ◽  
Strained Si ◽  
Strained Layers ◽  
B Doping

ABSTRACTThe effective transversal mobility of the minority carrier electrons in asymmetrically strained p-type Si1−x Gex -layers, grown on a Si (100) substrate, is studied as a function of boron doping concentration and Ge-content x. The experiments are based on the temperature dependence (290 to 400K) of the collector current enhancement of heterojunction bipolar transistors with a pseudomorphic Si1−x Gex-base. The interpretation of these results is based on new insights about the effective density of states in the valence band of these strained layers [1]. We will present first experimental evidence of the theoretical calculations in [1]. From this we will derive then the value of the NcNv -product for the strained Si1−x Gex-alloy. This allows to extract the ratio of the electron mobility in Si and strained Si1−xGex. We found an enhancement of the mobility when the B-doping level is around 1018 cm−3 and 0.08<x<0.16. At higher values of the Ge-content and the doping level, the enhancement is reduced again.

Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation

1997 ◽  
Vol 469 ◽  
Author(s):  
L. D. Lanzerotti ◽  
J. C. Sturm ◽  
E. Stach ◽  
R. Hull ◽  
T. Buyuklimanli ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Carbon Incorporation ◽  
Carbon Fractions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Heavily Doped

ABSTRACTIn this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

2009 ◽  
Vol 56 (10) ◽  
pp. 2169-2177 ◽  
Author(s):  
Lan Luo ◽  
Guofu Niu ◽  
Kurt A. Moen ◽  
John D. Cressler
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bound State ◽  
Ionization Rate ◽  
Bipolar Transistors ◽  
Compact Modeling ◽  
Temperature Dependent ◽  
Alternative Approach ◽  
Complete Ionization ◽  
Heavily Doped

In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier freezeout is shown to be the dominant contributor to increased resistances at cryogenic temperatures for lightly-doped and moderately-doped regions, whereas the temperature dependence of the mobility is the dominant contributor to the temperature dependence of heavily-doped regions. Two incomplete ionization models, the classic model with a doping dependent activation energy and the recent model of Altermatt , are shown to underestimate and overestimate incomplete ionization rate below 100 K for intrinsic base doping, respectively. Analysis of experimental data shows that the bound state fraction factor is temperature dependent and including this temperature dependence enables compact modeling of resistances from 30 to 300 K for moderately-doped regions. For heavily-doped regions, a dual power law mobility approximation with complete ionization is shown to work well down to 30 K. An alternative approach is also presented for heavily-doped resistors which allows one to use the same model equation for all regions.

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