Effect of Implant Energy on Silicon Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Desroches ◽  
V. Krishnamoorthy ◽  
K. S. Jones ◽  
C. Jasper
Keyword(s):  
Activation Energy ◽  
Primary Source ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Dose Ratio ◽  
Cross Sectional ◽  
Plan View ◽  
Enhanced Diffusion ◽  
Defect Evolution ◽  
The Relationship

ABSTRACTRecent studies on the relationship between defect evolution and transient enhanced diffusion (TED) have lead to the discovery that, for sub-amorphous Si+ implants, atoms released by extended defects (i.e. {311}'s) are a primary source of interstitials for TED. In this paper, the effect of implant energy on the interstitials stored in {311} defects is reported. Silicon wafers were implanted with Si+ at fluences of 1×1014/cm2 and 2×1014/cm2 and energies of 30, 50 and 100 keV. Rapid thermal anneals (RTA) and furnace anneals were performed at times ranging from a few minutes to several hours, at temperatures of 700°, 750° and 800°C. Cross-sectional and plan-view TEM was used to obtain microstructural information. The extended defects observed upon annealing consisted of both {311} defects and dislocation loops. It was found that the ratio of the interstitials bound by extended defects and the implant dose was 0.3. Changing the implant energy did not change the total number of interstitials trapped in both types of defects combined. There was a noticeable variation in the type of defect that dominated each implant regime, despite the constant value of the trapped interstitial to dose ratio. For an RTA of 5 min. at 750°C, the ratio of {311} “rod-like” defects to dislocation loops in the 2×1014/cm2 sample unexpectedly increased as the energy increased from 30 to 50 keV.Longer furnace anneals were employed to determine the activation energy of {311} dissolution. Our data suggests a slightly higher activation energy for {311} dissolution of approximately 4.2 eV versus the previously reported 3.6 eV, however, this difference may be within experimental error.

Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Andres F. Gutierrez ◽  
Kevin S. Jones ◽  
Daniel F. Downey
Keyword(s):  
Time Window ◽  
Low Energy ◽  
Dislocation Loops ◽  
Medium Energy ◽  
Evolutionary Pathway ◽  
Plan View ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Defect Evolution

ABSTRACTPlan-view transmission electron microscopy (PTEM) was used to characterize defect evolution upon annealing of low-to-medium energy, 5-30 keV, germanium implants into silicon. The implant dose was 1 × 1015 ions/cm2, sufficient for surface amorphization. Annealing of the samples was done at 750 °C in nitrogen ambient by both rapid thermal annealing (RTA) and conventional furnace, and the time was varied from 10 seconds to 360 minutes. Results indicate that as the energy drops from 30 keV to 5 keV, an alternate path of excess interstitials evolution may exist. For higher implant energies, the interstitials evolve from clusters to {311}'s to loops as has been previously reported. However, as the energy drops to 5 keV, the interstitials evolve from clusters to small, unstable dislocation loops which dissolve and disappear within a narrow time window, with no {311}'s forming. These results imply there is an alternate evolutionary pathway for {311} dissolution during transient enhanced diffusion (TED) for these ultra-low energy implants.

The Effect of Implant Species on the Stability of Ion Implantation Damage

1988 ◽  
Vol 100 ◽  
Author(s):  
K. S. Jones ◽  
S. Prussin ◽  
D. Venables
Keyword(s):  
Solid Solubility ◽  
Chemical Species ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Damage Category ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Residual Damage ◽  
The Stability

ABSTRACTA systematic study of the effect of the chemical species, implanted into silicon, on the stability of the residual damage has been performed. Plan-view and cross-sectional transmission electron microscopy (TEM) studies show that the stability of the end of range damage (category II) defects upon annealing depends dramatically upon the implant species. This is exemplified by the a comparison of 69Ga and 72Ge implants in which a decrease in the dislocation density by over four orders is noted for 69Ga implants compared to 72Ge implants after identical annealing cycles. Additional comparisons of species with similar atomic masses indicate that this destabilizing influence on the dislocation loops by the implant species is related to exceeding the solid solubility of the implanted species. As a result of this dislocation loop destabilization effect complete elimination of the dislocation loops can be realized after relatively short thermal cycling. Evidence is presented indicating that the precipitates which form upon exceeding the solid solubility (category V defects) are dissolving during this enhanced defect dissolution process.

A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 357-364
Author(s):  
S. Peripolli ◽  
Marie France Beaufort ◽  
David Babonneau ◽  
Sophie Rousselet ◽  
P.F.P. Fichtner ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
Inert Gases ◽  
Extended Defects ◽  
Cross Sectional ◽  
Plan View ◽  
New Approach ◽  
X Ray ◽  
Implantation Temperature ◽  
X Ray Scattering ◽  
Transmission Electron

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Renata A. Camillo-Castillo ◽  
Kevin. S. Jones ◽  
Mark E. Law ◽  
Leonard M. Rubin
Keyword(s):  
Defect Density ◽  
Low Energy ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transmission Electron ◽  
Concentration Peak ◽  
Scale Down

AbstractTransient enhanced diffusion (TED) is a challenge that the semi-conductor industry has been faced with for more than two decades. Numerous investigations have been conducted to better understand the mechanisms that govern this phenomenon, so that scale down can be acheived. {311} type defects and dislocation loops are known interstitial sources that drive TED and dopants such as B utilize these interstitials to diffuse throughout the Si lattice. It has been reported that a two-step anneal on Ge preamorphized Si with ultra-low energy B implants has resulted in shallower junction depths. This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1x1015cm-2 and subsequently implanted with 1x1015cm-2 1keV B. Furnace anneals were performed at 450, 550, 650 and 750°C; the samples were then subjected to a spike RTA at 950°C. The implant damage was analyzed using Quantitative Transmission Electron Microscopy (QTEM). At the low energy Ge preamorphization, little damage is observed. However at the higher energies the microstructure is populated with extended defects. The defects evolve into elongated loops as the preanneal temperature increases. Both the extended defect density and the trapped interstitial concentration peak at a preanneal temperature of 550°C, suggesting that this may be an optimal condition for trapping interstitials.

Cross-Sectional and Plan-View Observation of Cracks Introduced in Si at the Ductile-Brittle Transition Temperature

1998 ◽  
Vol 539 ◽  
Author(s):  
Suprijadi ◽  
H. Saka
Keyword(s):  
Transition Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mode I ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Brittle Transition ◽  
Ductile Brittle Transition Temperature ◽  
Brittle Transition Temperature

AbstractMode I cracks introduced in Si at the ductile-brittle transition temperature (DBTT) have been examined extensively using transmission electron microscopy. Cross-sectional as well as plane-view specimens suitable for the observation were prepared using a focused ion beam technique. Many small dislocation loops nucleate at the fracture surface of a mode I crack during the propagation at DBTT.

The Kinetics and Microstructure of Ion Beam Induced Crystallisation of Silicon

1985 ◽  
Vol 45 ◽  
Author(s):  
J.S. Williams ◽  
W.L. Brown ◽  
R. G. Elliman ◽  
R. V. Knoell ◽  
D.M. Maher ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystal Growth ◽  
Growth Kinetics ◽  
Temperature Regime ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Nucleation Sites ◽  
Higher Temperature

ABSTRACTThis paper reviews recent detailed investigations into the crystal growth kinetics and the microstructure of ion-beam-stimulated epitaxial crystallisation of silicon. Beam-induced crystallisation at temperatures between 200-400°C is found to be characterised by an activation energy of 0.24eV. Furthermore, in this temperature regime, crystal growth on (100) silicon is found to be free of extended defects except for a sharp hand of dislocation loops centred about the range of the ions employed to stimulate crystallisation. A higher temperature regime (>400°C) is observed in which the growth kinetics are less well defined but appear to be associated with an apparent activation energy of >0.5eV. In this regime, extended defects are observed to extend from the ion range to the surface. Results are presented which strongly suggest that nuclear energy deposition precisely at the amorphous-crystalline interface is responsible for crystallisation under ion irradiation. It is argued that the major fraction (2.4eV) of the thermal-only activation energy for epitaxial crystallisation of silicon is likely to be associated with the formation of nucleation sites for growth, a step which is achieved athermally under ion irradiation. In addition, the growth rate per unit ion fluence is found to be independent of substrate orientation at temperatures <450°C and independent of doping concentration for temperatures <400°C. These results are consistent with our proposed model for beam-induced crystallisation.

Evolution of nucleation sites and bubble precursors in silicon as a function of helium implanted dose

2002 ◽  
Vol 719 ◽  
Author(s):  
Changlong Liu ◽  
R. Delamare ◽  
E. Ntsoenzok ◽  
G. Regula ◽  
B. Pichaud ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Dose Range ◽  
Nuclear Reaction Analysis ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Dose Dependent ◽  
Subsequent Thermal Annealing

Abstract(111) oriented silicon samples were implanted at room temperature with 1.55 MeV 3He ions in the dose range of 5×1015 to 5×1016/cm2. Cross-sectional transmission electron microscopy (XTEM) was used to study the evolution of bubbles and extended defects during subsequent thermal annealing at 800°C and 900°C for 30min. The He desorption from bubbles and bubble precursors was measured by means of nuclear reaction analysis (NRA). TEM observations show that no bubbles were observed in Si implanted at doses lower than 1×1016/cm2, while a well-defined cavity band was formed after implantation at 5×1016/cm2 and subsequent thermal annealing. At the intermediary dose of 2×1016/cm2, however, the evolution of bubbles and extended defects is quite different. The bubbles prefer to nucleate in large planar clusters surrounded by a high density of dislocation loops emerging from them. The clusters of bubbles act as the sources of the dislocation loops. NRA measurements indicate that the He desorption behavior is also dose-dependent. The He desorption is achieved much faster in low dose implanted Si. The results are qualitatively discussed.

Defect Structures Generated by Buried Amorphous Layer Regrowth in Arsenic Implanted Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
Kevin S. Jones ◽  
S. Prussin
Keyword(s):  
Ion Beam ◽  
Amorphous Layer ◽  
High Energy ◽  
Dislocation Loops ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Plan View ◽  
Extrinsic Dislocation ◽  
Shear Type ◽  
Type Dislocation

AbstractPlan-view and 90° cross-sectional TEM examination was used to investigate the correlation between the type of amorphous layer produced and the resulting defect structure observed upon annealing. Both <100> and <111> Si wafers were ion implanted with high energy (190 keV) arsenic over a range of doses(1 × 1015/cm2 to 5 × 1015/cm2). A Wayflow endstation was used allowing ion beam induced epitaxial crystallization (IBIEC)[8] or dynamic annealing of the sample to occur. Implanted <111> Si is shown to form a continuous amorphous layer up to the surface, while <100> implanted Si forms a buried amorphous layer. The regrowth of the buried x-layer by furnace annealing is shown to be responsible for the formation of shear type dislocation loops at the interface where the two x/c regrowth fronts meet (catagory IV defects).[7] However if the buried layer is regrown by dynamic annealing a different structure results.In addition to using <111> wafers, other parameter changes which resulted in the formation of surface amorphous layers included decreasing the implant energy from 190 keV to 100 keV, or implanting the wafer at 77K instead of using the Wayflow endstation. Regrowth of the surface amorphous layers produced by these changes did not result in the formation of shear type dislocation loops. Further annealing of the 100 keV Wayflow implant and the 190 keV 77K implant at 900°C for 30 minutes resulted in the formation of small prismatic extrinsic dislocation loops beneath the location of the original amorphous/crystalline interface (catagory II defects).[71]

Nucleation and Growth of {113} Defects and {111} Dislocation Loops Insilicon-Implanted Selicon

1997 ◽  
Vol 469 ◽  
Author(s):  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microstructural Characterization ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTPlan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 36×1014 Si/cm2, 8.0 mAand annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the <110> direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the <110>directions inclined to the implantation surface.

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