Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J-W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Renata A. Camillo-Castillo ◽  
Kevin. S. Jones ◽  
Mark E. Law ◽  
Leonard M. Rubin
Keyword(s):  
Defect Density ◽  
Low Energy ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transmission Electron ◽  
Concentration Peak ◽  
Scale Down

AbstractTransient enhanced diffusion (TED) is a challenge that the semi-conductor industry has been faced with for more than two decades. Numerous investigations have been conducted to better understand the mechanisms that govern this phenomenon, so that scale down can be acheived. {311} type defects and dislocation loops are known interstitial sources that drive TED and dopants such as B utilize these interstitials to diffuse throughout the Si lattice. It has been reported that a two-step anneal on Ge preamorphized Si with ultra-low energy B implants has resulted in shallower junction depths. This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1x1015cm-2 and subsequently implanted with 1x1015cm-2 1keV B. Furnace anneals were performed at 450, 550, 650 and 750°C; the samples were then subjected to a spike RTA at 950°C. The implant damage was analyzed using Quantitative Transmission Electron Microscopy (QTEM). At the low energy Ge preamorphization, little damage is observed. However at the higher energies the microstructure is populated with extended defects. The defects evolve into elongated loops as the preanneal temperature increases. Both the extended defect density and the trapped interstitial concentration peak at a preanneal temperature of 550°C, suggesting that this may be an optimal condition for trapping interstitials.

Effect of Implant Energy on Silicon Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Desroches ◽  
V. Krishnamoorthy ◽  
K. S. Jones ◽  
C. Jasper
Keyword(s):  
Activation Energy ◽  
Primary Source ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Dose Ratio ◽  
Cross Sectional ◽  
Plan View ◽  
Enhanced Diffusion ◽  
Defect Evolution ◽  
The Relationship

ABSTRACTRecent studies on the relationship between defect evolution and transient enhanced diffusion (TED) have lead to the discovery that, for sub-amorphous Si+ implants, atoms released by extended defects (i.e. {311}'s) are a primary source of interstitials for TED. In this paper, the effect of implant energy on the interstitials stored in {311} defects is reported. Silicon wafers were implanted with Si+ at fluences of 1×1014/cm2 and 2×1014/cm2 and energies of 30, 50 and 100 keV. Rapid thermal anneals (RTA) and furnace anneals were performed at times ranging from a few minutes to several hours, at temperatures of 700°, 750° and 800°C. Cross-sectional and plan-view TEM was used to obtain microstructural information. The extended defects observed upon annealing consisted of both {311} defects and dislocation loops. It was found that the ratio of the interstitials bound by extended defects and the implant dose was 0.3. Changing the implant energy did not change the total number of interstitials trapped in both types of defects combined. There was a noticeable variation in the type of defect that dominated each implant regime, despite the constant value of the trapped interstitial to dose ratio. For an RTA of 5 min. at 750°C, the ratio of {311} “rod-like” defects to dislocation loops in the 2×1014/cm2 sample unexpectedly increased as the energy increased from 30 to 50 keV.Longer furnace anneals were employed to determine the activation energy of {311} dissolution. Our data suggests a slightly higher activation energy for {311} dissolution of approximately 4.2 eV versus the previously reported 3.6 eV, however, this difference may be within experimental error.

Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?

1998 ◽  
Vol 532 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Predictive Modeling ◽  
Extended Defects ◽  
Extended Defect ◽  
Experimental Knowledge ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Deactivation

ABSTRACTAccurate modeling of extended defect kinetics is of primary importance for predictive modeling of transient enhanced diffusion (TED). Our previously developed model accurately accounts for extended defects and can be used predictively for TED. Using some experimental knowledge about the distribution of the extended defect population we can simplify our model. We demonstrate that reducing the number of solution variables by one doesn't affect the predictive capabilities of the model for extended defect kinetics and TED. However, some caution has to be used when applying the same principles to modeling of dopant deactivation.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J- W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

The Effect of a Thin Sample on the Extended Defect Evolution in Si+ Implanted Si

1997 ◽  
Vol 490 ◽  
Author(s):  
Jing-Hong Li ◽  
Kevin S. Jones
Keyword(s):  
Dislocation Loop ◽  
Ex Situ ◽  
Dissolution Process ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Thin Sample ◽  
Extended Defect ◽  
Defect Evolution ◽  
Annealing Study

ABSTRACTThe annealing kinetics of implant damage in Si+ implanted Si has been investigated using in-situ and ex-situ annealing of transmission electron microscopy (TEM) samples prepared prior to annealing. The defect evolution at 800°C was studied for a Si wafer implanted with Si+ at 100keV to a dose of 2×1014 cm-2. This implant was above the sub-threshold loop formation threshold allowing one to study simultaneously the {311} defect dissolution and dislocation loop nucleation and growth. In order to study the effect on the defect evolution of using a thin sample for an in-situ annealing experiment, a pair of samples, one thick and one thinned into a TEM sample, were annealed in a furnace simultaneously. It was found that the presence of a second surface 2000Å below the implant damage did not affect the extended defect evolution. For the in-situ annealing study it was found that the {311} dissolution process and sub-threshold dislocation loop formation process was not affected by the TEM electron beam at 160kV as long as an 800°C furnace pre-anneal was done prior to in-situ annealing. The dissolution rate of the {311} defects was used to confirm the TEM holder furnace temperature. The results of both the in-situ the {311} defects is released during the 311 dissolution process and 30% comes to reside in dislocation loops. Thus, the loops appear to contain a significant fraction of the total interstitial concentration introduced by the implant.

The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86 Ge0.14

2004 ◽  
Vol 810 ◽  
Author(s):  
Huda A. W. A. El Mubarek ◽  
Yun Wang ◽  
Janet M. Bonar ◽  
Peter Hemment ◽  
Peter Ashburn
Keyword(s):  
Thermal Diffusion ◽  
Sige Layer ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Rich Region ◽  
Implantation Energy ◽  
Enhanced Diffusion ◽  
Partial Relaxation ◽  
Transient Enhanced Diffusion ◽  
Marker Layer

ABSTRACTThis paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

2003 ◽  
Vol 94 (12) ◽  
pp. 7520 ◽  
Author(s):  
E. Lampin ◽  
F. Cristiano ◽  
Y. Lamrani ◽  
A. Claverie ◽  
B. Colombeau ◽  
...  
Keyword(s):  
Extended Defects ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion

2001 ◽  
Vol 669 ◽  
Author(s):  
Julie L. Ngau ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Recent Work ◽  
Comprehensive Model ◽  
Pairing Mechanism ◽  
Diffusion Behavior ◽  
Interstitial Carbon ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Single Temperature ◽  
Carbon Interstitial

ABSTRACTIn this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.

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