Photoluminescence and Raman Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates

1985 ◽  
Vol 46 ◽  
Author(s):  
J.A. Freitas ◽  
S.G. Bishop ◽  
A. Addamiano ◽  
P.H. Klein ◽  
H.J. Kin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Defect Complexes ◽  
Substrate Removal ◽  
Nitrogen Donor ◽  
Donor Acceptor

AbstractThin films of cubic SiC were grown on Si substrates by a new CVD heteroepitaxial technique. The cubic polytype and crystal quality were verified by room temperature Raman spectroscopy. Low temperature photoluminescence (PL) studies detected nitrogen donor bound excitons, N-Al donor-acceptor pairs in Al-doped samples, and some defect complexes usually observed only in irradiated samples. Evidence of strain due to the Si-SiC lattice mismatch was observed in both the Raman and PL spectra and the effects of substrate removal and high temperature annealing on these optical spectra were studied.

Tribological Behavior of DLC Films by RF-PECVD at the Elevated Temperature

2007 ◽  
Vol 353-358 ◽  
pp. 1781-1784
Author(s):  
Yong Kyung Cho ◽  
Yun Ha Shin ◽  
Sung Hoon Jeong ◽  
Young Ze Lee
Keyword(s):  
Raman Spectroscopy ◽  
Elevated Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Tribological Behavior ◽  
Chemical Vapor ◽  
Diamond Like Carbon ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Higher Temperature

The tribological behaviors of Diamond-like carbon (DLC) films, prepared by the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method, were studied in the room temperature and the elevated temperature. The ball-on-disk tests with DLC films on steel specimens were conducted at a sliding speed of 60 rpm, a load of 10 N, and surrounding temperatures of 25°C and 75°C. The results show that the coefficients of friction and the amounts of wear of DLC films were decreased at higher temperature. After tests the wear tracks of hydrogenated DLC film were analyzed by Raman spectroscopy.

Carrier Transport in One-dimensional Ge Nanowires/Si Substrate Heterojunctions

2004 ◽  
Vol 832 ◽  
Author(s):  
Eun-Kyu Lee ◽  
Boris V. Kamenev ◽  
Pavel A. Forsh ◽  
Ted I. Kamins ◽  
Leonid Tsybeskov
Keyword(s):  
Vapor Deposition ◽  
Carrier Transport ◽  
Room Temperature ◽  
Defect Density ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Significant Frequency ◽  
One Dimensional ◽  
Si Substrates ◽  
Ac Conductance

ABSTRACTSamples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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