Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating

T. Egawa; H. Tada; Y. Kobayashi; T. Soga; T. Jimbo; M. Umeno

doi:10.1063/1.103519

Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating

Applied Physics Letters ◽

10.1063/1.103519 ◽

1990 ◽

Vol 57 (12) ◽

pp. 1179-1181 ◽

Cited By ~ 38

Author(s):

T. Egawa ◽

H. Tada ◽

Y. Kobayashi ◽

T. Soga ◽

T. Jimbo ◽

...

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Si Substrates ◽

Low Threshold ◽

Room Temperature Operation

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Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

IEEE Journal of Quantum Electronics ◽

10.1109/3.90007 ◽

1991 ◽

Vol 27 (6) ◽

pp. 1798-1803 ◽

Cited By ~ 15

Author(s):

T. Egawa ◽

T. Soga ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Intermediate Layers ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

10.1117/12.304463 ◽

1998 ◽

Cited By ~ 2

Author(s):

Manijeh Razeghi ◽

Adam W. Saxler ◽

Patrick Kung ◽

Danielle Walker ◽

Xiaolong Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical ◽

Room Temperature Operation ◽

Multiquantum Well

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Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93476 ◽

1982 ◽

Vol 41 (3) ◽

pp. 228-230 ◽

Cited By ~ 45

Author(s):

R. D. Burnham ◽

D. R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Diode Lasers ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

10.1117/12.176612 ◽

1994 ◽

Author(s):

Hanmin Zhao ◽

Michael H. MacDougal ◽

Kushant Uppal ◽

Newton C. Frateschi ◽

Paul D. Dapkus ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Step ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Low threshold, optically pumped, room‐temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge‐coated Si substrates

Applied Physics Letters ◽

10.1063/1.96812 ◽

1986 ◽

Vol 48 (25) ◽

pp. 1713-1715 ◽

Cited By ~ 24

Author(s):

J. P. van der Ziel ◽

R. D. Dupuis ◽

J. C. Bean

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Laser Oscillation ◽

Optically Pumped ◽

Si Substrates ◽

Double Heterostructures ◽

Low Threshold ◽

Metalorganic Chemical

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IIIA-5 low threshold, high efficiency Ga1-xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1982.20957 ◽

1982 ◽

Vol 29 (10) ◽

pp. 1674-1674

Author(s):

R.D. Burnham ◽

D.R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Diode Lasers ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstructure lasers grown by metalorganic chemical vapor deposition

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205319 ◽

2003 ◽

Author(s):

R.D. Heller ◽

G. Walter ◽

N. Holonyak ◽

D.T. Mathes ◽

R. Hull ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Threshold ◽

Metalorganic Chemical

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Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l1781 ◽

1991 ◽

Vol 30 (Part 2, No. 10B) ◽

pp. L1781-L1783 ◽

Cited By ~ 6

Author(s):

Yasufumi Kobayashi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Si Substrates ◽

Selective Area ◽

Metalorganic Chemical

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First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3860 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3860-3862 ◽

Cited By ~ 9

Author(s):

Zaman Iqbal Kazi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Si Substrate ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4197 ◽

2003 ◽

Vol 42 (Part 1, No. 7A) ◽

pp. 4197-4202 ◽

Cited By ~ 9

Author(s):

Youji Yamashita ◽

Hitoshi Tamura ◽

Naochika Horio ◽

Hitoshi Sato ◽

Kazuyoshi Taniguchi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Flow Reactor ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Light Emitting ◽

Split Flow ◽

Metalorganic Chemical

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