Direct Measurement of the Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon Ribbon

1985 ◽  
Vol 46 ◽  
Author(s):  
A.E. Jaworowski ◽  
L.S. Wielunski ◽  
T.W. Listerman
Keyword(s):  
Barrier Layer ◽  
Direct Method ◽  
Depth Resolution ◽  
Surface Region ◽  
Near Surface ◽  
Surface Hydrogen ◽  
Plasma Treatments ◽  
Silicon Ribbon ◽  
First Time ◽  
High Depth

AbstractThe near-surface hydrogen profile was measured using the 15N hydrogen profiling technique in silicon ribbon grown by the edge-defined film-fed growth (EFG) process. This direct method has a high depth resolution of 10 - 30 Å, can be used to a depth of several microns, and can measure hydrogen in concentration of 100 at. ppm. By appropriate surface treatment we were able to observe for the first time the separation of the near-surface hydrogen profile in silicon from the surface hydrogen contamination layer. Using our technique, hydrogen profiling of the near-surface region revealed the existence of a subsurface hydrogen layer which acts as a barrier to the transfer of hydrogen into the bulk of both passivated and untreated silicon. The structure of this hydrogen barrier was measured for different plasma treatments.

The Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. E. Jaworowski ◽  
L. S. Wielunski ◽  
G. Bambakidis
Keyword(s):  
Thermal Stability ◽  
Barrier Layer ◽  
Molecular Hydrogen ◽  
Subsurface Layer ◽  
Surface Region ◽  
Surface Contamination ◽  
Near Surface ◽  
Surface Hydrogen

ABSTRACTThe near-surface hydrogen profile was measured using the 15N hydrogen profiling technique in silicon. By depositing an adlayer of Al on the surface we were able to observe the separation of the near-surface hydrogen profile in silicon from the surface contamination layer. The hydrogen profiling of the near-surface region revealed the existence of a subsurface hydrogen layer which acts as a barrier to the transfer of hydrogen into the bulk. The observed subsurface layer is saturated with molecular hydrogen and its profile drops off sharply with increasing depth. The structure of this molecular hydrogen barrier and its thermal stability were studied.

scholarly journals High depth-resolution laser ablation chemical analysis of additive-assisted Cu electroplating for microchip architectures

2015 ◽  
Vol 30 (12) ◽  
pp. 2371-2374 ◽  
Author(s):  
A. Riedo ◽  
V. Grimaudo ◽  
P. Moreno-García ◽  
M. B. Neuland ◽  
M. Tulej ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Chemical Analysis ◽  
Grain Boundary ◽  
Depth Resolution ◽  
Boundary Analysis ◽  
Highly Sensitive ◽  
Cu Electroplating ◽  
First Time ◽  
High Depth

Highly sensitive LIMS measurements allow for the first time quantitative grain boundary analysis at the nanometre regime.

Correction Method for Ion Yield Transients in the Near Surface Region of Sims Depth Profiles

1985 ◽  
Vol 54 ◽  
Author(s):  
S. R. Bryan ◽  
R. W. Linton ◽  
D. P. Griffis
Keyword(s):  
Steady State ◽  
Secondary Ion Mass Spectrometry ◽  
High Sensitivity ◽  
Depth Resolution ◽  
Surface Region ◽  
Correction Method ◽  
Ion Concentration ◽  
Near Surface ◽  
Ion Yields ◽  
Secondary Ion

As solid state device features continue to decrease in size, it has become more important to characterize dopant concentrations within the first several hundred angstroms of the surface. Secondary ion mass spectrometry (SIMS) is the technique of choice for dopant depth profiling due to its high sensitivity and good depth resolution. In order to increase the sensitivity of SIMS, electropositive elements (e.g. oxygen) or electronegative elements (e.g. cesium) are used as primary ion species to enhance positive or negative secondary ion yields, respectively. This has the disadvantage, however, of causing secondary ion yields to vary by up to several orders of magnitude over the first few hundred angstroms of a depth profile as the implanted primary ion concentration increases [1,2]. Secondary ion yields stabilize once the primary ion reaches a steady state concentration, which occurs at a depth proportional to the range of the primary ions in the solid. This ion yield transient artifact hinders quantification of dopant concentrations until the primary ion concentration reaches steady state.

DEPTH-RESOLVED SOFT X-RAY EMISSION SPECTROSCOPY OF Si-BASED MATERIALS

2002 ◽  
Vol 09 (01) ◽  
pp. 461-467 ◽  
Author(s):  
A. V. ZIMINA ◽  
A. S. SHULAKOV ◽  
S. EISEBITT ◽  
W. EBERHARDT
Keyword(s):  
Electronic Structure ◽  
Depth Resolution ◽  
Surface Region ◽  
Primary Electron ◽  
Depth Information ◽  
Near Surface ◽  
X Ray ◽  
Chemical Phase ◽  
Information Depth ◽  
Postimplantation Annealing

We discuss a soft X-ray emission (SXE) valence band (VB) spectroscopy method for the study of the electronic structure and chemical phase composition of solids in a near-surface region with depth resolution. The depth information is obtained by variation of the energy of the incident electron beam used to excite the SXE spectra. As the information depth can be varied from about 1 nm to 1 μm in silicon, this method is suitable for the investigation of materials of modern micro- and nanoelectronics. VB → core level (Si 2p or Al 2p) transitions in Si-based materials are used to demonstrate the technique. It was found that the contribution of the signal from the near-surface region (< 1.5 nm) can be substantial (up to 50%) when the primary electron energy does not exceed the Si L 2,3 threshold by more than 150 eV. The technique is applied to Al impurities in a Si matrix, produced by ion implantation. The electronic structure at the Al sites and depth distribution of the Al impurity change markedly after postimplantation annealing. The observed electronic structure after annealing is in agreement with electronic structure calculations for substitutional Al impurities in a crystalline Si lattice.

scholarly journals Structure, physical and chemical properties of near-surface layers of optical materials modified by treatment in hydrogen plasma

2021 ◽  
pp. 12-39
Author(s):  
U. O. Salgaeva ◽  
◽  
A. B. Volyntsev ◽  
S. S. Mushinsky ◽  
◽  
...  
Keyword(s):  
Optical Materials ◽  
Hydrogen Plasma ◽  
Surface Region ◽  
Soda Lime ◽  
Plasma Modification ◽  
Soda Lime Glass ◽  
Structure And Properties ◽  
Surface Layers ◽  
Near Surface ◽  
First Time

The present paper aims to investigate the structure and properties of the near-surface layers of optical materials modified by treatment in hydrogen plasma (H-plasma). For this the quartz and soda-lime glasses, lithium niobate (LN) as delivered and LN after proton exchange were used. The structure and properties of the near-surface layers of optical materials were investigated by IR spectroscopy, Raman spectroscopy, X-ray diffraction analysis, atomic force microscopy, mode spectroscopy, scanning electron microscopy, and wet chemical etching. During the treatment in H-plasma the hydrogen penetrated into the near-surface layers and caused increasing the number of defects in the structure of materials. Changes of the shape and intensity of the absorption peaks of OH–-groups and the θ/2θ- curves recorded from the LN samples processed in H-plasma were inconsequent, probably due to the thin modified layer. For the first time, a huge volume “swelling” (above 10 %) of the near-surface layers of LN and soda-lime glass after the processing in H-plasma was revealed. Also for the first time, the formation of thin strained layers on the surface of the LN after treatment in H-plasma was shown; the density reduction of the near-surface layers of the LN modified in H-plasma was described; the features of blistering and flaking were found on the surface of LN and soda-lime glass after their treatment for a long time (120–150 min). For the first time, the multilayer structure of the near-surface region of the LN was detected after treatment in H-plasma. In this paper we proposed the model of changes the structure and properties of LN after the treatment in H-plasma. The model explains the experimental results obtained in this study and previously published studies of other research groups. Due to the high concentration in the near-surface layers of optical materials after the H-plasma treatment, hydrogen predominantly forms pores and bubbles. Presumably the compounds of the Li2O–Nb2O5 system with a low Li content formed in the near-surface region of LN after the treatment in H-plasma. Modification of near-surface layers of optical materials in hydrogen plasma could be used to form elements of integrated-optical circuits, particularly the diffraction gratings.

Low Temperature Plasma Anodization of Silicides

1984 ◽  
Vol 38 ◽  
Author(s):  
J. Perriere ◽  
J. Siejka ◽  
A. Laurent ◽  
J. P. Enard ◽  
F. D'heurle
Keyword(s):  
Low Temperature ◽  
Oxygen Plasma ◽  
Surface Region ◽  
Metallic Oxide ◽  
Temperature Plasma ◽  
Near Surface ◽  
Oxide Layers ◽  
Metal Silicides ◽  
Set Up ◽  
First Time

AbstractIn the first time, hundreds nm thick oxide layers were formed by room temperature plasma anodization of some refractory disilicides. Nuclear microanalysis and Rutherford backscattering techniques were used to study the anodic oxidation of various metal silicides (Hf, Ti and Zr) in a multipolar oxygen plasma set-up. We have found that the low temperature (<100 °C) plasma anodization kinetics of Hf or Zr silicides is two orders of magnitude higher than that of Ti silicide although their thermodynamic and physicochemical behaviour are very similar. 200 nm thick Hf (or Zr) and Si mixed oxide layers have been obtained in one hour plasma anodization. Analysis of RBS spectra indicates that the ratio of Si to metal cation concentration in the bulk of oxide grownis the same than the silicide (HfSi2 or ZrSi2), while in the near surface region of oxide (20 to 30 nm) there is an enrichment in metallic oxide leading to a Si to Hf (or Zr) concentration ratio equal to unity. The spectacular difference between the anodization rates in oxygen plasma of Hf (and Zr) silicides comparing to Ti silicides can be related to the catalytic effect on plasma anodization of the Hf and Zr oxides.

Topographical changes induced by high dose carbon-bombardment of graphite

1993 ◽  
Vol 8 (10) ◽  
pp. 2587-2599 ◽  
Author(s):  
B.K. Annis ◽  
D.F. Pedraza ◽  
S.P. Withrow
Keyword(s):  
Dose Rate ◽  
Pyrolytic Graphite ◽  
Surface Region ◽  
Scanning Tunneling ◽  
High Dose ◽  
Near Surface ◽  
Optical Scanning ◽  
Atomic Force ◽  
First Time ◽  
High Shearing

Highly oriented pyrolytic graphite has been implanted at room temperature with 165 keV C+-ions at doses from 6 × 1017 to 3 × 1019 ions/m2. Implantation-induced topographical changes of differing size scales were studied by optical, scanning electron, scanning tunneling, and atomic force microscopies. Defects with atomic resolution are seen for the lower dose implants. The formation of a vacancy line is revealed for the first time. At the higher doses a dendrite-like system of deep surface cracks is observed. This cracking develops as a result of the large basal plane contraction produced by irradiation which generates high shearing stresses between the implanted, damaged surface layer and the underlying material. Two independent systems of ridges have been characterized. One appears to follow a crystallographic direction while the other appears as a dense, intricate, generally curvilinear network with short ramifications. Additional experiments in which both the ion energy and dose rate have been varied indicate that ridge evolution progresses with increased energy and fluence, but is independent of dose rate. It is suggested that the ridge networks may form as a result of C transport by diffusion from the heavily damaged near-surface region or of a tectonic-plate-like motion or both. The geometric features of the ridge networks are related to the subsurface radiation damage as well.

Near Surface Structure of Ion Implanted Si Studied by Grazing Incidence X-Ray Scattering

1988 ◽  
Vol 143 ◽  
Author(s):  
G. Wallner ◽  
E. Burkel ◽  
H. Metzger ◽  
J. Peisl ◽  
S. Rugel
Keyword(s):  
Grazing Angle ◽  
Surface Region ◽  
Grazing Incidence ◽  
Detailed Comparison ◽  
X Rays ◽  
Near Surface ◽  
X Ray Scattering ◽  
Induced Defects ◽  
First Time ◽  
Theoretical Results

AbstractX-rays incident on a surface under grazing angle may undergo total external reflection and excite an interior wave field damped exponentially into the bulk. These evanescent waves are a sensitive probe for the study the real structure in the near surface region. We report results on the influence of implantation defects on Bragg diffracted and on diffuse intensities. By detailed comparison of Bragg intensities with predictions of dynamical scattering theory we detect the presence of amorphous layers and determine their thickness. For the first time defect induced diffuse scattering underconditions of grazing incidence andexit is observed and compared to recent theoretical results. Strength and symmetry of implantation induced defects can be determined as well as their depth distribution which is compared to results of a TRIM simulation: the defect distribution is found to agree with that of the deposited collisional energy.

Soft X‐Ray Studies of Y‐Ba‐Cu‐O Thin Films Prepared by Laser Ablation

1989 ◽  
Vol 169 ◽  
Author(s):  
A. Krol ◽  
C.J. Sher ◽  
D.R. Storch ◽  
L.W. Song ◽  
Y.H. Kao ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Parallel Plate ◽  
Surface Region ◽  
Angular Variation ◽  
Near Surface ◽  
X Ray ◽  
20 Nm ◽  
First Time ◽  
Oxygen Atoms

AbstractAngular variation of x‐ray fluorescence due to oxygen atoms in high‐T Y‐Ba‐Cu‐O thin films is measured for the first time by using a new parallel plate avalanche chamber. This technique allows the possibility of nondestructive probing of the depth‐profile of oxygen atoms in the superconducting materials. Our preliminary results indicate that the near surface region of the Y‐Ba‐Cu‐O film may contain an oxygen‐depleted layer of thickness around 20 nm.

A Study of the Decomposition of GaN during Annealing over a Wide Range of Temperatures

2002 ◽  
Vol 743 ◽  
Author(s):  
M. A. Rana ◽  
H. W. Choi ◽  
M. B. H. Breese ◽  
T. Osipowicz ◽  
S. J. Chua ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Depth Resolution ◽  
Surface Region ◽  
Organic Chemical ◽  
Near Surface ◽  
Wide Range ◽  
Metal Organic ◽  
Amorphous Surface ◽  
Nitride Layers

ABSTRACTAnnealing experiments were carried out on gallium nitride layers, which were grown on sapphire through Metal Organic Chemical Vapor Deposition (MOCVD). Rutherford Backscattering Spectrometry (RBS) was performed on as-grown and annealed GaN samples using a 2 MeV proton beam to study the stoichiometric changes in the near-surface region (750 nm) with depth resolution better than 50 nm. No decomposition was measured for temperatures o up to 800 °C. Decomposition in the near-surface region increased rapidly with a further increase o of temperature, resulting in a near-amorphous surface-region for annealing at 1100 °C. The depth profiles of nitrogen and incorporated oxygen in the decomposed GaN are extracted from the nanoscale RBS data for different annealing temperatures. The surface roughness of the GaN layers observed by atomic force microscopy (AFM) is consistent with RBS decomposition measurements. We describe the range of annealing conditions under which negligible decomposition of GaN is observed, which is important in assessing optimal thermal processing conditions of GaN for both conventional and nanoscale optoelectronic devices.

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