Low Temperature Plasma Anodization of Silicides

1984 ◽  
Vol 38 ◽  
Author(s):  
J. Perriere ◽  
J. Siejka ◽  
A. Laurent ◽  
J. P. Enard ◽  
F. D'heurle
Keyword(s):  
Low Temperature ◽  
Oxygen Plasma ◽  
Surface Region ◽  
Metallic Oxide ◽  
Temperature Plasma ◽  
Near Surface ◽  
Oxide Layers ◽  
Metal Silicides ◽  
Set Up ◽  
First Time

AbstractIn the first time, hundreds nm thick oxide layers were formed by room temperature plasma anodization of some refractory disilicides. Nuclear microanalysis and Rutherford backscattering techniques were used to study the anodic oxidation of various metal silicides (Hf, Ti and Zr) in a multipolar oxygen plasma set-up. We have found that the low temperature (<100 °C) plasma anodization kinetics of Hf or Zr silicides is two orders of magnitude higher than that of Ti silicide although their thermodynamic and physicochemical behaviour are very similar. 200 nm thick Hf (or Zr) and Si mixed oxide layers have been obtained in one hour plasma anodization. Analysis of RBS spectra indicates that the ratio of Si to metal cation concentration in the bulk of oxide grownis the same than the silicide (HfSi2 or ZrSi2), while in the near surface region of oxide (20 to 30 nm) there is an enrichment in metallic oxide leading to a Si to Hf (or Zr) concentration ratio equal to unity. The spectacular difference between the anodization rates in oxygen plasma of Hf (and Zr) silicides comparing to Ti silicides can be related to the catalytic effect on plasma anodization of the Hf and Zr oxides.

Low temperature luminescence from the near surface region of Nd:YAG

2001 ◽  
Vol 13 (11) ◽  
pp. 2497-2515 ◽  
Author(s):  
M Maghrabi ◽  
P D Townsend ◽  
G Vazquez
Keyword(s):  
Low Temperature ◽  
Surface Region ◽  
Near Surface

Pulsed Ion Beam Annealing of Metal and Silicide Thin Films on Silicon

1982 ◽  
Vol 40 ◽  
pp. 458-459
Author(s):  
L.J. Chen ◽  
L.S. Hung ◽  
J.W. Mayer
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Surface Region ◽  
Molten Layer ◽  
Near Surface ◽  
Contact Materials ◽  
Energy Beam ◽  
Nickel Thin Films ◽  
Metal Silicides ◽  
Silicide Growth

Metal silicides have found increasing use in microelectronic industry as contact materials. Energy beam annealing offers controlled energy deposition in the near surface region so that silicide growth is achieved without heating the entire layer. When pulsed laser and electron at high power density were applied to metal-semiconductor systems, cellular structures have been formed with silicon columns surrounded by silicide walls as a result of the formation of the molten layer of metal and silicon followed by segregation due to constitutional supercooling as the melt front moves toward the surface. A wealth of microstructures were observed in pulsed ion beam annealed nickel thin films on silicon. An interface melting mechanism was invoked to explain the results. In this paper, we report further data on the subject.

scholarly journals Structure, physical and chemical properties of near-surface layers of optical materials modified by treatment in hydrogen plasma

2021 ◽  
pp. 12-39
Author(s):  
U. O. Salgaeva ◽  
◽  
A. B. Volyntsev ◽  
S. S. Mushinsky ◽  
◽  
...  
Keyword(s):  
Optical Materials ◽  
Hydrogen Plasma ◽  
Surface Region ◽  
Soda Lime ◽  
Plasma Modification ◽  
Soda Lime Glass ◽  
Structure And Properties ◽  
Surface Layers ◽  
Near Surface ◽  
First Time

The present paper aims to investigate the structure and properties of the near-surface layers of optical materials modified by treatment in hydrogen plasma (H-plasma). For this the quartz and soda-lime glasses, lithium niobate (LN) as delivered and LN after proton exchange were used. The structure and properties of the near-surface layers of optical materials were investigated by IR spectroscopy, Raman spectroscopy, X-ray diffraction analysis, atomic force microscopy, mode spectroscopy, scanning electron microscopy, and wet chemical etching. During the treatment in H-plasma the hydrogen penetrated into the near-surface layers and caused increasing the number of defects in the structure of materials. Changes of the shape and intensity of the absorption peaks of OH–-groups and the θ/2θ- curves recorded from the LN samples processed in H-plasma were inconsequent, probably due to the thin modified layer. For the first time, a huge volume “swelling” (above 10 %) of the near-surface layers of LN and soda-lime glass after the processing in H-plasma was revealed. Also for the first time, the formation of thin strained layers on the surface of the LN after treatment in H-plasma was shown; the density reduction of the near-surface layers of the LN modified in H-plasma was described; the features of blistering and flaking were found on the surface of LN and soda-lime glass after their treatment for a long time (120–150 min). For the first time, the multilayer structure of the near-surface region of the LN was detected after treatment in H-plasma. In this paper we proposed the model of changes the structure and properties of LN after the treatment in H-plasma. The model explains the experimental results obtained in this study and previously published studies of other research groups. Due to the high concentration in the near-surface layers of optical materials after the H-plasma treatment, hydrogen predominantly forms pores and bubbles. Presumably the compounds of the Li2O–Nb2O5 system with a low Li content formed in the near-surface region of LN after the treatment in H-plasma. Modification of near-surface layers of optical materials in hydrogen plasma could be used to form elements of integrated-optical circuits, particularly the diffraction gratings.

Topographical changes induced by high dose carbon-bombardment of graphite

1993 ◽  
Vol 8 (10) ◽  
pp. 2587-2599 ◽  
Author(s):  
B.K. Annis ◽  
D.F. Pedraza ◽  
S.P. Withrow
Keyword(s):  
Dose Rate ◽  
Pyrolytic Graphite ◽  
Surface Region ◽  
Scanning Tunneling ◽  
High Dose ◽  
Near Surface ◽  
Optical Scanning ◽  
Atomic Force ◽  
First Time ◽  
High Shearing

Highly oriented pyrolytic graphite has been implanted at room temperature with 165 keV C+-ions at doses from 6 × 1017 to 3 × 1019 ions/m2. Implantation-induced topographical changes of differing size scales were studied by optical, scanning electron, scanning tunneling, and atomic force microscopies. Defects with atomic resolution are seen for the lower dose implants. The formation of a vacancy line is revealed for the first time. At the higher doses a dendrite-like system of deep surface cracks is observed. This cracking develops as a result of the large basal plane contraction produced by irradiation which generates high shearing stresses between the implanted, damaged surface layer and the underlying material. Two independent systems of ridges have been characterized. One appears to follow a crystallographic direction while the other appears as a dense, intricate, generally curvilinear network with short ramifications. Additional experiments in which both the ion energy and dose rate have been varied indicate that ridge evolution progresses with increased energy and fluence, but is independent of dose rate. It is suggested that the ridge networks may form as a result of C transport by diffusion from the heavily damaged near-surface region or of a tectonic-plate-like motion or both. The geometric features of the ridge networks are related to the subsurface radiation damage as well.

scholarly journals Interaction model of low-temperature plasma with a steel surface during electrolyte plasma nitriding in an electrolyte on the bases of carbamide

2020 ◽  
Vol 100 (4) ◽  
pp. 39-48
Author(s):  
R.S. Kozhanova ◽  
◽  
B.K. Rakhadilov ◽  
W. Wieleba ◽  
◽  
...  
Keyword(s):  
Surface Layer ◽  
Low Temperature ◽  
Diffusion Layer ◽  
Steel Surface ◽  
Plasma Nitriding ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Near Surface ◽  
Wide Range ◽  
And Diffusion

The features of the formation of low-temperature plasma and its interaction with a metal surface were studied in this work. A qualitative model of the interaction of low-temperature plasma with the steel surface during nitriding has been developed by summarizing the available research results and taking into account the specific features of the electrolyte plasma process. In accordance with this model, in the first moments of the interaction of low-temperature plasma with the steel surface in the near-surface layer, which accelerated formation of the Feα(N) solid solution occurs due to the action of directed bombardment of charged particles, which enhances the adsorption and diffusion of nitrogen into the interior of the material, then dispersed particles of nitride of alloying elements are formed as further saturation in places with an increased level of free energy (at lattice defects, at grain boundaries, etc.). Subsequently, transformations occur in the surface zone of the layer when the limiting solubility of nitrogen in iron is exceeded, which leading to the formation of nitrides of the γ′-phase (Fe4N) and ε-phase (Fe2–3N) in it. Thus, electrolyte plasma nitriding opens up many new possibilities, in particular: varying the nitriding temperature over a wide range (400–700 ºC), targeted production of a nitrided layer consisting only of a diffusion layer without a layer of compounds, while obtaining a diffusion layer with particles γ’-phase (Fe4N) of plate form and with finely dispersed nitrides MN (CrN). The use of an electric discharge in an electrolyte (low-temperature plasma) makes it possible to increase the heating rate and diffusion saturation of the material surface. This work is of practical importance, since the studied method of electrolytic-plasma nitriding makes it possible to obtain a modified surface layer on steels with high physical and mechanical properties.

Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 333-338 ◽  
Author(s):  
Anis M. Saad ◽  
Olga V. Zinchuk ◽  
N.A. Drozdov ◽  
A.K. Fedotov ◽  
A.V. Mazanik
Keyword(s):  
Low Temperature ◽  
Spectral Region ◽  
Ion Beam ◽  
Surface Region ◽  
Near Surface ◽  
Ion Energy ◽  
Ion Beam Treatment ◽  
P Type ◽  
20 Nm ◽  
Argon Ion

The main goal of this work is to investigate the influence of low-temperature argon ionbeam treatment on the electric and structural properties of a near-surface region of the standard commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet (UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.

Near Surface Structure of Ion Implanted Si Studied by Grazing Incidence X-Ray Scattering

1988 ◽  
Vol 143 ◽  
Author(s):  
G. Wallner ◽  
E. Burkel ◽  
H. Metzger ◽  
J. Peisl ◽  
S. Rugel
Keyword(s):  
Grazing Angle ◽  
Surface Region ◽  
Grazing Incidence ◽  
Detailed Comparison ◽  
X Rays ◽  
Near Surface ◽  
X Ray Scattering ◽  
Induced Defects ◽  
First Time ◽  
Theoretical Results

AbstractX-rays incident on a surface under grazing angle may undergo total external reflection and excite an interior wave field damped exponentially into the bulk. These evanescent waves are a sensitive probe for the study the real structure in the near surface region. We report results on the influence of implantation defects on Bragg diffracted and on diffuse intensities. By detailed comparison of Bragg intensities with predictions of dynamical scattering theory we detect the presence of amorphous layers and determine their thickness. For the first time defect induced diffuse scattering underconditions of grazing incidence andexit is observed and compared to recent theoretical results. Strength and symmetry of implantation induced defects can be determined as well as their depth distribution which is compared to results of a TRIM simulation: the defect distribution is found to agree with that of the deposited collisional energy.

Sign in / Sign up

Export Citation Format

Share Document