Local Vibrational Mode Spectroscopy of Impurities in Semiconductors

1985 ◽  
Vol 46 ◽  
Author(s):  
R. C. Newman
Keyword(s):  
Gallium Arsenide ◽  
Dipole Moment ◽  
Vibrational Mode ◽  
Diagnostic Techniques ◽  
Heat Treatments ◽  
Host Lattice ◽  
Infrared Band ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

AbstractInfrared band—mode and LVM absorption is illustrated for a range of impurities and impurity—complexes in silicon and gallium arsenide. We discuss the effects of changes in the local force constants and contributions to the dipole moment resulting from displacements of host lattice atoms. The difficulties in establishing absolute calibrations relating the strength of the absorption to the concentration of defects are highlighted. Our purpose is to show how the measurements lead to characterization of crystals and how they complement other diagnostic techniques to evaluate effects of irradiation, heat treatments, diffusions etc.

scholarly journals Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014

2015 ◽  
Vol 62 ◽  
pp. 447-459
Author(s):  
Bruce A. Joyce
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Vibrational Mode ◽  
Fundamental Importance ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy ◽  
And Diffusion

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.

Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

1989 ◽  
Vol 54 (15) ◽  
pp. 1442-1444 ◽  
Author(s):  
J. Schneider ◽  
B. Dischler ◽  
H. Seelewind ◽  
P. M. Mooney ◽  
J. Lagowski ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

1991 ◽  
Vol 69 (2) ◽  
pp. 971-974 ◽  
Author(s):  
J. Wagner ◽  
M. Maier ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
...  
Keyword(s):  
Quantitative Assessment ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Enhanced formation of thermal donors in irradiated germanium: Local vibrational mode spectroscopy

1999 ◽  
Vol 33 (11) ◽  
pp. 1163-1165 ◽  
Author(s):  
A. A. Klechko ◽  
V. V. Litvinov ◽  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Raman Scattering Characterization of Implanted ZnO

2006 ◽  
Vol 957 ◽  
Author(s):  
Esther Alarcon-Llado ◽  
Ramon Cusco ◽  
Luis Artus ◽  
German Gonzalez-Diaz ◽  
Ignacio Martil ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Raman Spectra ◽  
Vibrational Mode ◽  
Group V ◽  
Local Vibrational Mode ◽  
Specific Effects ◽  
Lattice Damage ◽  
High Doses ◽  
High Degree

ABSTRACTIn this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to high doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.

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