scholarly journals Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014

2015 ◽  
Vol 62 ◽  
pp. 447-459
Author(s):  
Bruce A. Joyce
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Vibrational Mode ◽  
Fundamental Importance ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy ◽  
And Diffusion

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.

Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

1989 ◽  
Vol 54 (15) ◽  
pp. 1442-1444 ◽  
Author(s):  
J. Schneider ◽  
B. Dischler ◽  
H. Seelewind ◽  
P. M. Mooney ◽  
J. Lagowski ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Hydrogen Complexes and their Vibrations in Proton and Deuteron Implanted Inp: Theory and Experiment

1992 ◽  
Vol 291 ◽  
Author(s):  
D. N. Talwar ◽  
D. W. Fischer ◽  
M. O. Manasreh ◽  
G. Matous
Keyword(s):  
Nearest Neighbor ◽  
Vibrational Mode ◽  
The Other ◽  
Absorption Lines ◽  
Infrared Absorption Spectroscopy ◽  
Annealing Behavior ◽  
Local Vibrational Mode ◽  
Stretching Vibration ◽  
Mev Protons ◽  
Theory And Experiment

ABSTRACTBy using a Van de Graaff accelerator we have implanted 2 MeV protons and deuterons into InP samples. These implanted samples were annealed in 50 °C increments in the 200 to 600 °C temperature range for 30 minutes each and then measured by the infrared absorption spectroscopy. A group of four different local vibrational mode absorption lines is observed, each of which arises from the hydrogen-phosphorus stretching vibration with different defects or impurities at nearest-neighbor sites. Each mode exhibits an annealing behavior which is different than any of the other absorption lines. The annealing results are shown and discussed in terms of Green's function calculations of the defects responsible for the two absorption lines.

Local Vibrational Mode Spectroscopy of Impurities in Semiconductors

1985 ◽  
Vol 46 ◽  
Author(s):  
R. C. Newman
Keyword(s):  
Gallium Arsenide ◽  
Dipole Moment ◽  
Vibrational Mode ◽  
Diagnostic Techniques ◽  
Heat Treatments ◽  
Host Lattice ◽  
Infrared Band ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

AbstractInfrared band—mode and LVM absorption is illustrated for a range of impurities and impurity—complexes in silicon and gallium arsenide. We discuss the effects of changes in the local force constants and contributions to the dipole moment resulting from displacements of host lattice atoms. The difficulties in establishing absolute calibrations relating the strength of the absorption to the concentration of defects are highlighted. Our purpose is to show how the measurements lead to characterization of crystals and how they complement other diagnostic techniques to evaluate effects of irradiation, heat treatments, diffusions etc.

Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4568-4571
Author(s):  
L.I. Murin ◽  
B.G. Svensson ◽  
J.L. Lindström ◽  
V.P. Markevich ◽  
C.A. Londos
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Oxygen Complex

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

1991 ◽  
Vol 69 (2) ◽  
pp. 971-974 ◽  
Author(s):  
J. Wagner ◽  
M. Maier ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
...  
Keyword(s):  
Quantitative Assessment ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy
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