scholarly journals Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014

2015 ◽  
Vol 62 ◽  
pp. 447-459
Author(s):  
Bruce A. Joyce
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Vibrational Mode ◽  
Fundamental Importance ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy ◽  
And Diffusion

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.

Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

1989 ◽  
Vol 54 (15) ◽  
pp. 1442-1444 ◽  
Author(s):  
J. Schneider ◽  
B. Dischler ◽  
H. Seelewind ◽  
P. M. Mooney ◽  
J. Lagowski ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Local Vibrational Mode Spectroscopy of Impurities in Semiconductors

1985 ◽  
Vol 46 ◽  
Author(s):  
R. C. Newman
Keyword(s):  
Gallium Arsenide ◽  
Dipole Moment ◽  
Vibrational Mode ◽  
Diagnostic Techniques ◽  
Heat Treatments ◽  
Host Lattice ◽  
Infrared Band ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

AbstractInfrared band—mode and LVM absorption is illustrated for a range of impurities and impurity—complexes in silicon and gallium arsenide. We discuss the effects of changes in the local force constants and contributions to the dipole moment resulting from displacements of host lattice atoms. The difficulties in establishing absolute calibrations relating the strength of the absorption to the concentration of defects are highlighted. Our purpose is to show how the measurements lead to characterization of crystals and how they complement other diagnostic techniques to evaluate effects of irradiation, heat treatments, diffusions etc.

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

1991 ◽  
Vol 69 (2) ◽  
pp. 971-974 ◽  
Author(s):  
J. Wagner ◽  
M. Maier ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
...  
Keyword(s):  
Quantitative Assessment ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Enhanced formation of thermal donors in irradiated germanium: Local vibrational mode spectroscopy

1999 ◽  
Vol 33 (11) ◽  
pp. 1163-1165 ◽  
Author(s):  
A. A. Klechko ◽  
V. V. Litvinov ◽  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

scholarly journals The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 181-190 ◽  
Author(s):  
Vladimir P. Markevich ◽  
Anthony R. Peaker ◽  
Bruce Hamilton ◽  
S.B. Lastovskii ◽  
Leonid I. Murin ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Vibrational Mode ◽  
Deep Level ◽  
Vibrational Modes ◽  
Carrier Injection ◽  
Local Vibrational Mode ◽  
Diffusion Paths ◽  
Transient Spectroscopy ◽  
And Diffusion

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.

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