Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

1991 ◽  
Vol 69 (2) ◽  
pp. 971-974 ◽  
Author(s):  
J. Wagner ◽  
M. Maier ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
...  
Keyword(s):  
Quantitative Assessment ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

scholarly journals Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014

2015 ◽  
Vol 62 ◽  
pp. 447-459
Author(s):  
Bruce A. Joyce
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Vibrational Mode ◽  
Fundamental Importance ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy ◽  
And Diffusion

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.

Enhanced formation of thermal donors in irradiated germanium: Local vibrational mode spectroscopy

1999 ◽  
Vol 33 (11) ◽  
pp. 1163-1165 ◽  
Author(s):  
A. A. Klechko ◽  
V. V. Litvinov ◽  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Incorporation of Si in δ‐doped GaAs studied by local vibrational mode spectroscopy

1989 ◽  
Vol 55 (10) ◽  
pp. 978-980 ◽  
Author(s):  
J. Wagner ◽  
M. Ramsteiner ◽  
W. Stolz ◽  
M. Hauser ◽  
K. Ploog
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy
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